IP Library Granted Patent US 9,954,202
Granted Patent B2
US 9,954,202 · App. 15/120,762 · Granted Apr 24, 2018

Method for manufacturing electroluminescent display device

Inventor: Katsuyuki Ishizu (Shiga, JP)
Assignee: JOLED INC.
H01L51/56G01R31/44G09G3/3241H01L22/20H01L27/3244G09G2300/0814G09G2300/0819G09G2300/0842G09G2300/0866G09G2310/0262G09G2320/043G09G2330/08G09G2330/12G09G2340/06H01L2227/323H01L2251/568
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Quick Facts
Patent No.
US 9,954,202
App. No.
15/120,762
Granted
Apr 24, 2018
Kind
B2
Abstract

A plurality of pixels arranged in a matrix each include an EL element, a transistor, and a transistor. The EL element includes a cathode to which a first voltage is applied. The transistor includes a gate connected to a gate signal line, a source connected to an anode of the EL element, and a drain to which a second voltage having a potential higher than a potential of the first voltage is applied. A method for manufacturing the EL display device includes: applying the second voltage to the anode of the EL element via the transistor, by applying an ON voltage to the gate signal line; and detecting light emission by the EL element, using an optical detector, in a state in which the ON voltage is being applied to the gate signal line.

Claims (40)

1. A method for manufacturing an electroluminescent (EL) display device that includes a display screen in which a plurality of pixels are arranged in a matrix, wherein

the plurality of pixels each include an EL element, a driving transistor which supplies a current to the EL element, and a switching transistor,

the EL element includes a first terminal to which a first voltage is applied, and a second terminal, and

the switching transistor includes a gate terminal connected to a gate signal line, a third terminal connected to the second terminal, and a fourth terminal to which a second voltage is applied, the second voltage having a potential higher than a potential of the first voltage, the method comprising:

applying the second voltage to the second terminal via the switching transistor, by applying an ON voltage to the gate signal line,

detecting light emission by the EL element, using an optical detector, in a state in which the ON voltage is being applied to the gate signal line;

detecting a defective pixel by turning on all of the plurality of pixels arranged in the display screen, prior to the applying, and

determining which one of the EL element and a pixel circuit element other than the EL element has a defect, based on a result of the detecting of the light emission by the EL element, wherein

in the determining, the pixel circuit element is determined to be a cause of the defect when the defective pixel includes the EL element whose light emission is detected in the detecting of the light emission, and the EL element is determined to be a cause of the defect when the defective pixel includes the EL element whose light emission is not detected in the detecting of the light emission.

2. The method for manufacturing the EL display device according to claim 1 , wherein

the pixel circuit element includes the switching transistor and the driving transistor.

3. The method for manufacturing the EL display device according to claim 1 , wherein

in the applying, the second voltage is applied to the second terminal via the switching transistor and bypassing the driving transistor, by applying the ON voltage to the gate signal line.

4. The method for manufacturing the EL display device according to claim 1 , wherein

the EL display device includes a source signal line disposed for each of pixel columns of the plurality of pixels, for transmitting a signal voltage reflecting a video signal, to a gate terminal of the driving transistor,

the fourth terminal is connected to the source signal line disposed in an adjacent one of the pixel columns, and

in the applying, the second voltage applied to the source signal line disposed in the adjacent one of the pixel columns is applied to the second terminal via the switching transistor, by applying the ON voltage to the gate signal line.

5. The method for manufacturing the EL display device according to claim 1 , wherein

the display screen includes a first gate driver circuit and a second gate driver circuit,

the plurality of pixels each include a second switching transistor for applying a video signal to the driving transistor, the second switching transistor including a gate terminal connected to a second gate signal line, and

the second gate signal line is driven by the first gate driver circuit and the second gate driver circuit.

6. The method for manufacturing the EL display device according to claim 5 , wherein

the plurality of pixels each include a third switching transistor for performing an offset cancelling operation of the driving transistor, the third switching transistor including a gate terminal connected to a third gate signal line, and

the third gate signal line is driven by the first gate driver circuit and the second gate driver circuit.

7. The method for manufacturing the EL display device according to claim 6 , wherein

the gate signal line which is connected to the gate terminal of the switching transistor is driven by only one of the first gate driver circuit and the second gate driver circuit.

8. The method for manufacturing the EL display device according to claim 7 , wherein

one of the first gate driver circuit and the second gate driver circuit is disposed on a left side of the display screen, and

an other of the first gate driver circuit and the second gate driver circuit is disposed on a right side of the display screen.

9. The method for manufacturing the EL display device according to claim 1 , wherein

in the detecting of the defective pixel, all of the plurality of pixels arranged in the display screen are concurrently turned on.

10. The method for manufacturing the EL display device according to claim 1 , wherein

in the detecting of the light emission by the EL element, only the switching transistor which includes the gate terminal connected to the gate signal line is turned on among transistors of the plurality of pixels.

11. The method for manufacturing the EL display device according to claim 1 , further comprising:

in the applying the second voltage to the second terminal via the switching transistor, selecting the gate signal line for each pixel row.

12. The method for manufacturing the EL display device according to claim 1 , wherein

the plurality of pixels each include a second switching transistor for applying a video signal to the driving transistor,

the second switching transistor of adjacent pixels of the plurality of pixels is connected to different second gate signal lines, and

the method further comprises:

in the detecting of the defective pixel, concurrently or alternately selecting the different second gate signal lines.

Assignments (6)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 18, 2025
From: JDI DESIGN AND DEVELOPMENT G.K.
To: MAGNOLIA BLUE CORPORATION
Reel/Frame 072039/0656 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 31, 2024
From: JOLED, INC.
To: JDI DESIGN AND DEVELOPMENT G.K.
Reel/Frame 066382/0619 →
CORRECTION BY AFFIDAVIT FILED AGAINST REEL/FRAME 063396/0671 Recorded Jun 12, 2023
From: JOLED, INC.
To: JOLED, INC.
Reel/Frame 064067/0723 →
SECURITY INTEREST Recorded Apr 20, 2023
From: JOLED, INC.
To: INCJ, LTD.
Reel/Frame 063396/0671 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 23, 2016
From: ISHIZU, KATSUYUKI
To: PANASONIC CORPORATION
Reel/Frame 039507/0826 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 23, 2016
From: PANASONIC CORPORATION
To: JOLED INC.
Reel/Frame 039508/0063 →
Priority Claims (1)
JP 2014-033751 · Feb 25, 2014 · national
Continuity (1)
Related Publication 20170005298A1 · Jan 5, 2017