Mask blank, phase-shift mask and method for manufacturing semiconductor device
To provide a phase-shift mask in which the reduction in thickness of a light-shielding film is provided when a transition metal silicide-based material is used for the light-shielding film and by which the problem of ArF light fastness can be solved; and a mask blank for manufacturing the phase-shift mask. A mask blank 10 comprises a phase-shift film 2 and a light-shielding film 4 on a transparent substrate 1 , the phase-shift film 2 is made of a material with ArF light fastness, and at least one layer in the light-shielding film 4 is made of a material which contains transition metal, silicon, and nitrogen, and satisfies the conditions of Formula (1) below: C N ≤9.0×10 −6 ×R M 4 −1.65×10 −4 ×R M 3 −7.718×10 −2 ×R M 2 +3.611× R M −21.084 Formula (1) wherein R M is a ratio of the content of transition metal to the total content of transition metal and silicon in said one layer, and C N is the content of nitrogen in said one layer.
1. A mask blank having a structure in which a phase-shift film, an etching stopper film, and a light-shielding film are laminated in said order on a transparent substrate,
wherein the etching stopper film is made of a material containing chromium;
wherein the phase-shift film is made of a material in which transition metal, silicon, and nitrogen are contained, and a ratio of the content [at %] of transition metal to the total content [at %] of transition metal and silicon is less than 4[%];
wherein the light-shielding film has a single layer structure, or a laminated structure comprised of multiple layers; and
wherein at least one layer in the light-shielding film is made of a material which contains transition metal and silicon, but does not contain nitrogen and oxygen, or a material which contains transition metal, silicon, and nitrogen, and satisfies the conditions of Formula (1) below:
C N ≤9.0×10 −6 ×R M 4 −1.65×10 −4 ×R M 3 −7.718×10 −2 ×R M 2 +3.611× R M −21.084 Formula (1)
wherein R M is a ratio [%] of the content [at %] of transition metal to the total content [at %] of transition metal and silicon in said one layer, and C N [at %] is the content [at %] of nitrogen in said one layer.
2. The mask blank according to claim 1 , wherein the optical density with respect to ArF excimer laser light is 2.7 or more in the laminated structure of the phase-shift film, etching stopper film, and light-shielding film.
3. The mask blank according to claim 1 , wherein a hard mask film made of a material containing chromium is provided on the light-shielding film.
4. A phase-shift mask manufactured from the mask blank according to claim 1 .
5. A method for manufacturing a semiconductor device, comprising the step of:
setting the phase-shift mask according to claim 4 on an exposure apparatus having an exposure light source for emitting ArF excimer laser light, so as to transfer a transfer pattern onto a resist film formed on a transfer target substrate.
6. A mask blank having a structure in which a phase-shift film, an etching stopper film, and a light-shielding film are laminated in said order on a transparent substrate,
wherein the etching stopper film is made of a material containing chromium;
wherein the phase-shift film is comprised of a surface layer and layers other than the surface layer;
wherein the layers other than the surface layer are made of a material in which transition metal, silicon, and nitrogen are contained, a ratio of the content [at %] of transition metal to the total content [at %] of transition metal and silicon is less than 9[%], and incomplete nitride is a main component;
wherein the light-shielding film has a single layer structure, or a laminated structure comprised of multiple layers; and
wherein at least one layer in the light-shielding film is made of a material which contains transition metal and silicon, but does not contain nitrogen and oxygen, or a material which contains transition metal, silicon, and nitrogen, and satisfies the conditions of Formula (2) below:
C N ≤9.0×10 −6 ×R M 4 −1.65×10 −4 ×R M 3 −7.718×10 −2 ×R M 2 +3.611× R M −21.084 Formula(2)
wherein R M is a ratio [%] of the content [at %] of transition metal to the total content [at %] of transition metal and silicon in said one layer, and C N [at %] is the content [at %] of nitrogen in said one layer.
7. The mask blank according to claim 6 , wherein the optical density with respect to ArF excimer laser light is 2.7 or more in the laminated structure of the phase-shift film, etching stopper film, and light-shielding film.
8. The mask blank according to claim 6 , wherein a hard mask film made of a material containing chromium is provided on the light-shielding film.
9. A phase-shift mask manufactured from the mask blank according to claim 6 .
10. A method for manufacturing a semiconductor device, comprising the step of:
setting the phase-shift mask according to claim 9 on an exposure apparatus having an exposure light source for emitting ArF excimer laser light, so as to transfer a transfer pattern onto a resist film formed on a transfer target substrate.
11. A mask blank having a structure in which a phase-shift film, an etching stopper film, and a light-shielding film are laminated in said order on a transparent substrate,
wherein the etching stopper film is made of a material containing chromium;
wherein the phase-shift film is comprised of a surface layer and layers other than the surface layer;
wherein the layers other than the surface layer are made of a material consisting of silicon and nitrogen, or a material consisting of silicon, nitrogen, and one or more elements selected from metalloid elements, non-metallic elements, and noble gases;
wherein the light-shielding film has a single layer structure, or a laminated structure comprised of multiple layers; and
wherein at least one layer in the light-shielding film is made of a material which contains transition metal and silicon, but does not contain nitrogen and oxygen, or a material which contains transition metal, silicon, and nitrogen, and satisfies the conditions of Formula (3) below:
C N ≤9.0×10 −6 ×R M 4 −1.65×10 −4 ×R M 3 −7.718×10 −2 ×R M 2 +3.611× R M −21.084 Formula (3)
wherein R M is a ratio [%] of the content [at %] of transition metal to the total content [at %] of transition metal and silicon in said one layer, and C N [at %] is the content [at %] of nitrogen in said one layer.
12. The mask blank according to claim 11 , wherein the layers other than the surface layer in the phase-shift film have a structure in which a low-transmittance layer and a high-transmittance layer are laminated, and
wherein the low-transmittance layer has nitrogen content that is relatively lower than the high-transmittance layer.
13. The mask blank according to claim 11 , wherein the surface layer in the phase-shift film is made of a material consisting of silicon, nitrogen, and oxygen, or a material consisting of silicon, nitrogen, oxygen, and one or more elements selected from metalloid elements, non-metallic elements, and noble gases.
14. The mask blank according to claim 11 , wherein the optical density with respect to ArF excimer laser light is 2.7 or more in the laminated structure of the phase-shift film, etching stopper film, and light-shielding film.
15. The mask blank according to claim 11 , wherein a hard mask film made of a material containing chromium is provided on the light-shielding film.
16. A phase-shift mask manufactured from the mask blank according to claim 11 .
17. A method for manufacturing a semiconductor device, comprising the step of:
setting the phase-shift mask according to claim 16 on an exposure apparatus having an exposure light source for emitting ArF excimer laser light, so as to transfer a transfer pattern onto a resist film formed on a transfer target substrate.