Copper etchant solution additives and method for producing copper etchant solution
View Patent ↗The present disclosure discloses a copper etchant solution additives and a method for producing copper etchant solution. The method includes: producing copper etchant solution additives, wherein the copper etchant solution additives is an inorganic solution with cupric ions (Cu2+), and deionized water is a solvent for the copper etchant solution additives and is electric neutrality; before wet-etching, the copper etchant solution additives is added in the copper etchant solution, and the copper etchant solution is with a cupric ions (Cu2+) concentration of 700-1000 ppm. Through the above method, the present disclosure can improve etchant property of copper etchant solution to increase etching rate and uniformity.
1. A method for producing copper etchant solution, the production method comprising:
producing copper etchant solution additives, wherein the copper etchant solution additives is an inorganic solution with cupric ions (Cu2+), and deionized water is a solvent for the copper etchant solution additives and is electric neutrality;
adding the copper etchant solution additives in copper etchant solution to obtain the copper etchant solution with a cupric ions (Cu2+) concentration of 700-1000 ppm before wet-etching, wherein the cupric ions (Cu2+) in the copper etchant solution are all electrolytic without forming complexes or depositions.
2. The method of claim 1 , wherein the step of producing the copper etchant solution additives comprises:
dissolving 18 g of copper sulfate pentahydrate in 100 g of water to form the copper etchant solution additives.
3. The method of claim 2 , wherein the step of that the copper etchant solution additives is added in copper etchant solution before wet-etching comprises:
adding 12.8 g of copper etchant solution additives in every 500 mL copper etchant solution to obtain the copper etchant solution with a cupric ions (Cu2+) concentration of 1000 ppm.
4. The method of claim 1 , wherein the step of producing copper etchant solution additives comprises:
dissolving 10 g of copper sulfate pentahydrate and 10 g of copper nitrate in 100 g of water to form the copper etchant solution additives.
5. The method of claim 4 , wherein the step of that the copper etchant solution additives is added in copper etchant solution before wet-etching comprises:
adding 10 g of copper etchant solution additives in every 500 mL of copper etchant solution to obtain the copper etchant solution with a cupric ions (Cu2+) concentration of 1000 ppm.
6. A copper etchant solution additives, wherein the copper etchant solution additives is an inorganic comprising cupric ions (Cu2+), deionized water is a solvent for the copper etchant solution additives and is electric neutrality, and the copper etchant solution additives is added in a copper etchant solution before wet-etching to obtain the copper etchant solution with a cupric ions (Cu2+) concentration of 700-1000 ppm, wherein the cupric ions (Cu2+) in the copper etchant solution are all electrolytic without forming complexes or depositions.
7. The copper etchant solution additives of claim 6 , wherein the copper etchant solution additives is aqueous copper sulfate formed by dissolving 18 g of copper sulfate pentahydrate in 100 g of water.
8. The copper etchant solution additives of claim 7 , wherein the copper etchant solution contains 12.8 g of copper etchant solution additives in every 500 mL of copper etchant solution, and is with a cupric ions (Cu2+) concentration of 1000 ppm.
9. The copper etchant solution additives of claim 6 , wherein the copper etchant solution additives is an aqueous solution of both copper sulfate and copper nitrate, and is formed by dissolving 10 g of copper sulfate pentahydrate and 10 g of copper nitrate in 100 g of water.
10. The copper etchant solution additives of claim 9 , wherein the copper etchant solution contains 10 g of copper etchant solution additives in every 500 mL of copper etchant solution, and is with a cupric ions (Cu2+) concentration of 1000 ppm.