Organic EL element comprising first and second interlayers of specified materials and thicknesses, and method for manufacturing thereof

1. An organic EL element comprising:

an anode;

a light-emitting layer disposed above the anode;

a first interlayer disposed on the light-emitting layer, the first interlayer including a fluoride that includes a first metal that is an alkali metal or alkaline earth metal;

a second interlayer disposed on the first interlayer, the second interlayer including a second metal that has a property of cleaving a bond between the first metal and fluorine in the fluoride;

a cathode disposed on the second interlayer;

a sorption layer disposed above the cathode, the sorption layer including a third metal that has a property of taking up and holding at least one of moisture and oxygen; and

a sealing layer on the sorption layer, wherein

material included in the first interlayer and material included in the second interlayer are mixed,

in a layer including the first interlayer and the second interlayer, a component ratio of the second metal to the first metal is from 2% to 10%,

in the layer including the first interlayer and the second interlayer, a boundary between the first interlayer and the second interlayer is not defined,

the sorption layer includes a thickness from 5 nm to 12 nm,

the third metal includes the property of cleaving the bond between the first metal and the fluorine in the fluoride included in the first interlayer, and

the third metal is a same type of metal as the second metal.

2. The organic EL element of claim 1 , wherein

each of the second metal and the third metal is an alkali metal or alkaline earth metal.

3. The organic EL element of claim 1 , wherein

the cathode comprises a cathode thin film layer made from metal and a cathode auxiliary layer disposed on the cathode thin film layer, the cathode auxiliary layer having at least one of an electron transporting property and an electron injecting property.

4. The organic EL element of claim 3 , wherein

the cathode thin film layer is made from one metal material or an alloy of a plurality of metal materials.

5. The organic EL element of claim 1 , wherein

the second metal and the third metal are barium.

6. The organic EL element of claim 1 , wherein

the first metal is sodium.

7. The organic EL element of claim 1 , wherein

in the layer including the first interlayer and the second interlayer, concentration of the first metal is higher on a side of the light-emitting layer than on a side of the cathode, and

in the layer including the first interlayer and the second interlayer, concentration of the second metal is higher on the side of the cathode than on the side of the light-emitting layer.

8. The organic EL element of claim 1 , wherein

in the layer including the first interlayer and the second interlayer, a thickness of the first interlayer is from 1 nm to 10 nm and a thickness of the second interlayer is from 0.2 nm to 1 nm.

9. The organic EL element of claim 1 , wherein

a thickness of the layer including the first interlayer and the second interlayer is from 1.2 nm to 11 nm.

10. A method of manufacturing an organic EL element, the method comprising:

forming an anode;

forming a light-emitting layer above the anode;

forming a first interlayer of thickness D 1 on the light-emitting layer, the first interlayer including a fluoride that includes a first metal that is an alkali metal or alkaline earth metal;

forming a second interlayer of thickness D 2 on the first interlayer, the second interlayer including a second metal that has a property of cleaving a bond between the first metal and fluorine in the fluoride;

forming a cathode on the second interlayer;

forming a sorption layer above the cathode, the sorption layer including a third metal that has a property of taking up and holding moisture and oxygen; and

forming a sealing layer on the sorption layer, wherein

material included in the first interlayer and material included in the second interlayer are mixed,

in a layer including the first interlayer and the second interlayer, a component ratio of the second metal to the first metal is from 2% to 10%,

in the layer including the first interlayer and the second interlayer, a boundary between the first interlayer and the second interlayer is not defined,

the sorption layer includes a thickness from 5 nm to 12 nm,

the third metal includes the property of cleaving the bond between the first metal and the fluorine in the fluoride included in the first interlayer, and

the third metal is a same type of metal as the second metal.

11. The method of claim 10 , wherein

each of the second metal and the third metal is an alkali metal or alkaline earth metal.

12. The method of claim 10 , wherein

the thickness D 1 is from 1 nm to 10 nm.

13. The method of claim 10 , wherein

the thickness D 2 is from 0.2 nm to 1 nm.

14. The method of claim 10 , wherein

the forming of the cathode includes the following:

forming a cathode thin film layer by using a metal material; and

forming a cathode auxiliary layer on the cathode thin film layer, the cathode auxiliary layer having at least one of an electron transporting property and an electron injecting property.

15. The method of claim 14 , wherein

the cathode thin film layer is made from one metal material or an alloy of a plurality of metal materials.

16. The method of claim 10 , wherein

the second metal and the third metal are barium.

17. The method of claim 10 , wherein

the first metal is sodium.

18. The method of claim 10 , wherein

in the layer including the first interlayer and the second interlayer, concentration of the first metal is higher on a side of the light-emitting layer than on a side of the cathode, and

in the layer including the first interlayer and the second interlayer, concentration of the second metal is higher on the side of the cathode than on the side of the light-emitting layer.

19. The method of claim 10 , wherein

in the layer including the first interlayer and the second interlayer, the thickness D 1 of the first interlayer is from 1 nm to 10 nm and the thickness D 2 of the second interlayer is from 0.2 nm to 1 nm.

20. The method of claim 10 , wherein

a thickness of the layer including the first interlayer and the second interlayer is from 1.2 nm to 11 nm.