Semiconductor device and method of manufacturing the semiconductor device
A semiconductor device includes: a semiconductor substrate including a trench provided in a surface of the semiconductor substrate; a trench electrode provided in the trench; an interlayer insulating film covering a surface of the trench electrode and protruding from the surface of the semiconductor substrate; a Schottky electrode provided on the surface of the semiconductor substrate, provided in a position separated from the interlayer insulating film, and being in Schottky contact with the semiconductor substrate; an embedded electrode provided in a concave portion between the interlayer insulating film and the Schottky electrode and made of a metal different from a metal of the Schottky electrode; and a surface electrode covering the interlayer insulating film, the embedded electrode, and the Schottky electrode.
1. A semiconductor device comprising:
a semiconductor substrate including a trench provided in a surface of the semiconductor substrate;
a trench electrode provided in the trench;
an interlayer insulating film covering a surface of the trench electrode and protruding from the surface of the semiconductor substrate;
a Schottky electrode provided on the surface of the semiconductor substrate, provided in a position separated from the interlayer insulating film, and being in Schottky contact with the semiconductor substrate;
an embedded electrode provided in a concave portion between the interlayer insulating film and the Schottky electrode and constituted of a metal different from a metal of the Schottky electrode; and
a surface electrode covering the interlayer insulating film, the embedded electrode, and the Schottky electrode,
wherein an angle between the surface of the semiconductor substrate and a lateral surface of the Schottky electrode is greater than 90 degrees in a range covered with the embedded electrode.
2. The semiconductor device of claim 1 , wherein an angle between the surface of the semiconductor substrate and a lateral surface of the interlayer insulating film is greater than 90 degrees in a range covered with the embedded electrode.
3. The semiconductor device of claim 1 , wherein a barrier metal layer having an etching selectivity with respect to the embedded electrode is provided between the Schottky electrode and the surface electrode and between the interlayer insulating film and the surface electrode.
4. The semiconductor device of claim 1 , wherein the embedded electrode is in Ohmic contact with the semiconductor substrate.
5. The semiconductor device of claim 1 , wherein
the surface of the semiconductor substrate is an upper surface of the semiconductor substrate, and
the surface of the trench electrode is an upper surface of the trench electrode.
6. The semiconductor device of claim 1 , wherein
the surface electrode is in direct contact with the interlayer insulating film, the embedded electrode, and the Schottky electrode.
7. The semiconductor device of claim 1 , wherein
a bottom surface of the concave portion is constituted of the surface of the semiconductor substrate,
one lateral surface of the concave portion is constituted of the lateral surface of the Schottky electrode, and
the other lateral surface of the concave portion is constituted of a lateral surface of the interlayer insulating film.