SEMICONDUCTOR DEVICE
A semiconductor device comprises a convex portion, a concave portion provided so as to cover upper and side surfaces of the convex portion, a gate electrode provided so as to be opposed to the convex portion with a gate insulating film interposed between the gate electrode and the convex portion, a pair of diffusion layers provided within the convex portion so as to sandwich the gate electrode, and a contact plug provided on the concave portion, so as to be electrically connected to at least one of the diffusion layers.
1 - 17 . (canceled)
18 . A method for manufacturing a semiconductor device, comprising:
forming an active region having a convex shape and protruding from a semiconductor substrate, the active region being surrounded by a first isolation trench;
depositing an insulating material to completely fill the first isolation trench and to cover an upper surface and side surfaces of the active region;
recessing the insulating material to expose the upper surface of the active region and upper portions of the side surfaces;
forming an epitaxial semiconducting film on the exposed upper surface and the upper portions of the side surfaces;
forming an embedded gate electrode within the protruding active region, the embedded gate electrode being separated from the active region by a gate insulating film between the embedded gate electrode and the active region; and
forming a pair of diffusion layers so as to sandwich the embedded gate electrode,
wherein the epitaxial semiconducting film is electrically connected to at least one of the diffusion layers.
19 . The method according to claim 18 , wherein the step of forming the embedded gate electrode is performed after the step of forming the epitaxial semiconducting film.
20 . The method according to claim 18 , wherein the insulating material filled in the first isolation trench comprises a first insulating film provided on an inner wall surface of the first isolation trench, and the insulating material filled in the first isolation trench further comprises a second insulating film formed on the first insulating film so as to fill the first trench to an uppermost level of the first trench.
21 . The method according to claim 20 , wherein the first insulating film is a silicon nitride film.
22 . The method according to claim 20 , wherein the second insulating film is a silicon oxynitride film.
23 . The method according to claim 20 , wherein a second isolation trench is formed in a peripheral circuit region, the first insulating film being formed on an inner wall surface of the second isolation trench, and the second insulating film and a third insulating film being provided in order on the first insulating film so as to fill the second isolation trench to an uppermost level.
24 . The method according to claim 23 , wherein the third insulating film is a silicon oxide film.
25 . The method according to claim 18 , wherein the embedded gate electrode is buried in the convex portion, and the method further comprises:
forming a contact plug electrically connected to one of the diffusion layers;
forming a capacitor electrically connected to the contact plug; and
forming a bit line electrically connected to the other one of the diffusion layers.
26 . The method according to claim 18 , wherein the convex portion is an active region, and the gate insulating film, the embedded gate electrode and the pair of diffusion layers constitute a transistor.
27 . The method according to claim 18 , wherein the concave portion includes impurity-containing silicon.
28 . A method for manufacturing a semiconductor device, comprising:
forming a first region including an upper portion, a lower portion having a smaller width than the upper portion, and a level difference formed by a discontinuous variation of widths of the upper portion and the lower portion;
forming an embedded gate electrode within the first region, the embedded gate electrode being separated from the first region by a gate insulating film interposed between the embedded gate electrode and the first region;
forming a pair of diffusion layers within the first region so as to sandwich the embedded gate electrode; and
forming a contact plug within the upper portion so as to abut on at least one of the diffusion layers.
29 . The method according to claim 28 , wherein the lower portion is formed of an active region, and the gate insulating film, the embedded gate electrode and the pair of diffusion layers constitute a transistor.
30 . A method for manufacturing a semiconductor device, comprising:
forming a first region including a first upper portion and a first lower portion having a smaller width than the first upper portion;
forming a second region including a second upper portion and a second lower portion having a smaller width than the second upper portion;
forming a first isolation region between the first and second regions, so as to cover side surfaces of the first and second regions;
forming a first embedded gate electrode within the first region, the first embedded gate electrode being separated from the first region by a first gate insulating film interposed between the first gate electrode and the first region;
forming a second embedded gate electrode within the second region, the second embedded gate electrode being separated from the second region by a second gate insulating film interposed between the second gate electrode and the second region;
forming a pair of first diffusion layers within the first region so as to sandwich the first gate electrode;
forming a pair of second diffusion layers within the second region so as to sandwich the second gate electrode;
forming a first contact plug on the first region, so as to be electrically connected to at least one of the first diffusion layers; and
forming a second contact plug on the second region, so as to be electrically connected to at least one of the second diffusion layers.
31 . The method according to claim 30 , wherein the first isolation region comprises:
a first insulating film provided so as to abut on a lower surface of the first upper portion and a side surface of the first lower portion and so as to abut on a lower surface of the second upper portion and a side surface of the second lower portion; and
a second insulating film provided on the first insulating film, so as to abut on side surfaces of the first and second upper portions.
32 . The method according to claim 31 , wherein the first insulating film is a silicon nitride film.
33 . The method according to claim 31 , wherein the second insulating film is a silicon oxynitride film.
34 . The method according to claim 30 , further comprising:
forming a first capacitor electrically connected to the first contact plug;
forming a second capacitor electrically connected to the second contact plug;
forming a first bit line so as to be electrically connected to the other one of the first diffusion layers; and
forming a second bit line provided so as to be electrically connected to the other one of the second diffusion layers.
35 . The method according to claim 30 , wherein the first and second upper portions include impurity-containing silicon.