Semiconductor package with embedded output inductor
In one implementation, a semiconductor package includes a control transistor and a sync transistor of a power converter switching stage attached over a first patterned conductive carrier, as well as a magnetic material situated over leads of the first patterned conductive carrier. The semiconductor package also includes a second patterned conductive carrier attached over the first patterned conductive carrier, the control and sync transistors, and the magnetic material. Leads of the second patterned conductive carrier overlie the magnetic material and are coupled to the leads of the first patterned conductive carrier so as to form windings of an output inductor for the power converter switching stage, the output inductor being integrated into the semiconductor package.
1. A semiconductor package comprising:
a driver IC (Integrated Circuit), a control transistor, and a sync transistor of a power converter, wherein said driver IC and said control and sync transistors are attached over a first patterned conductive carrier and said driver IC is configured to drive said control and sync transistors to develop a voltage at a switch node of said power converter;
a magnetic material situated over a plurality of leads of said first patterned conductive carrier;
a second patterned conductive carrier that is not attached over said driver IC and is attached over said plurality of leads of said first patterned conductive carrier, said control and sync transistors, and said magnetic material;
wherein a plurality of leads of said second patterned conductive carrier overlie said magnetic material and said control and sync transistors and are coupled to said plurality of leads of said first patterned conductive carrier so as to form said switch node of said power converter and windings of an output inductor for said power converter, said output inductor being integrated into said semiconductor package.
2. The semiconductor package of claim 1 , wherein said magnetic material comprises a magnetic core.
3. The semiconductor package of claim 1 , wherein said magnetic material comprises a molding compound impregnated with magnetic particles.
4. The semiconductor package of claim 1 , wherein a drain of said control transistor is attached to a control drain segment of said first patterned conductive carrier.
5. The semiconductor package of claim 1 , wherein a source of said sync transistor is attached to a sync source segment of said first patterned conductive carrier.
6. The semiconductor package of claim 1 , wherein said second patterned conductive carrier couples a source of said control transistor to a drain of said sync transistor to provide said switch node of said power converter.
7. The semiconductor package of claim 1 , wherein said control and sync transistors comprise silicon transistors.
8. The semiconductor package of claim 1 , wherein said control and sync transistors comprise group III-V transistors.
9. The semiconductor package of claim 1 , wherein said first patterned conductive carrier comprises a portion of a lead frame.
10. The semiconductor package of claim 1 , wherein said second patterned conductive carrier comprises a portion of a lead frame.
11. A method for fabricating a semiconductor package, said method comprising:
attaching a driver IC (Integrated Circuit), a control transistor and a sync transistor of a power converter over a first patterned conductive carrier, wherein said driver IC is configured to drive said control and sync transistors to develop a voltage at a switch node of said power converter;
situating a magnetic material over a plurality of leads of said first patterned conductive carrier;
attaching a second patterned conductive carrier over said plurality of leads of first patterned conductive carrier, said control and sync transistors, and said magnetic material and not over said driver IC;
wherein a plurality of leads of said second patterned conductive carrier overlie said magnetic material and said control and sync transistors and are coupled to said plurality of leads of said first patterned conductive carrier so as to form said switch node of said power converter and windings of an output inductor for said power converter, said output inductor being integrated into said semiconductor package.
12. The method of claim 11 , wherein said magnetic material comprises a magnetic core.
13. The method of claim 11 , wherein said magnetic material comprises a molding compound impregnated with magnetic particles.
14. The method of claim 11 , wherein a drain of said control transistor is attached to a control drain segment of said first patterned conductive carrier.
15. The method of claim 11 , wherein a source of said sync transistor is attached to a sync source segment of said first patterned conductive carrier.
16. The method of claim 11 , wherein said second patterned conductive carrier couples a source of said control transistor to a drain of said sync transistor to provide said switch node of said power converter.
17. The method of claim 11 , wherein said control and sync transistors comprise silicon transistors.
18. The method of claim 11 , wherein said control and sync transistors comprise group III-V transistors.