IP Library Granted Patent US 10,128,813
Granted Patent B2
US 10,128,813 · App. 15/135,254 · Granted Nov 13, 2018

Bulk acoustic wave (BAW) resonator structure

Inventors: Robert Thalhammer (Munich, DE); Alexandre Shirakawa (San Jose, CA); Thomas Faust (Munich, DE); Phil Nikkel (Loveland, CO)
Assignee: Avago Technologies International Sales Pte. Limited
H03H9/02118H03H9/02102H03H9/02125H03H9/173H03H9/58H03H9/582
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Quick Facts
Patent No.
US 10,128,813
App. No.
15/135,254
Granted
Nov 13, 2018
Kind
B2
Abstract

A bulk acoustic wave (BAW) resonator comprises: a first electrode; a second electrode comprising a plurality of sides, wherein at least one of the sides is a connection side; a piezoelectric layer disposed between the first and second electrodes, and an acoustic reflective element disposed beneath the first electrode, the second electrode and the piezoelectric layer, wherein an overlap of the reflective element, the first electrode, the second electrode, and the piezoelectric layer defines an active area of the acoustic resonator; a bridge adjacent to a termination of the active area of the BAW resonator; and a discontinuity disposed in the bridge.

Claims (63)

1. A bulk acoustic wave (BAW) resonator, comprising:

a first electrode;

a second electrode comprising a plurality of sides, wherein at least one of the sides is a connection side;

a piezoelectric layer disposed between the first and second electrodes, and

an acoustic reflective element disposed beneath the first electrode, the second electrode and the piezoelectric layer, wherein a contacting overlap of the acoustic reflective element, the first electrode, the second electrode, and the piezoelectric layer defines an active area of the BAW resonator;

a bridge adjacent to a termination of the active area of the BAW resonator;

a layer at least a part of which is disposed over a gap, and between the piezoelectric layer and the second electrode, the layer comprising a frame element, the frame element being disposed immediately adjacent to the termination of the active area; and

a discontinuity, which exists in the bridge.

2. The BAW resonator as claimed in claim 1 , wherein the bridge comprises a plurality of layers, and the discontinuity in the bridge is in one of the layers in the bridge.

3. The BAW as claimed in claim 2 , wherein the one layer is a passivation layer disposed over the second electrode.

4. The BAW resonator as claimed in claim 3 , wherein the discontinuity in the passivation layer is the only discontinuity the bridge.

5. The BAW resonator as claimed in claim 3 , wherein the discontinuity in the passivation layer is one of a plurality of discontinuities.

6. The BAW resonator as claimed in claim 5 , wherein all of the plurality of discontinuities are only in the passivation layer.

7. The BAW resonator as claimed in claim 2 , wherein the one layer is a part of the second electrode.

8. The BAW resonator as claimed in claim 2 , wherein the discontinuity comprises a recess in the one layer.

9. The BAW resonator as claimed in claim 8 , wherein a material having a different acoustic impedance than an acoustic impedance of the one layer is disposed in the one layer.

10. The BAW resonator as claimed in claim 2 , wherein the second electrode comprises a first layer and a second layer, and the one layer is one of the first and second layers.

11. The BAW resonator as claimed in claim 1 , wherein the discontinuity comprises a width that is substantially equal to a ratio of a wavelength of a mode of the BAW resonator.

12. The BAW resonator of claim 11 , wherein the width is substantially equal to one-quarter wavelength (λ/4) of the mode of the BAW resonator.

13. The BAW resonator as claimed in claim 1 , further comprising a temperature compensation layer.

14. The BAW resonator as claimed in claim 13 , further comprising an interposer layer disposed over the piezoelectric layer, wherein the temperature compensation layer is disposed between the interposer layer and the second electrode.

15. The BAW resonator as claimed in claim 1 , further comprising a cantilevered portion on at least one of the plurality of sides that is not the connecting side.

16. The BAW resonator as claimed in claim 15 , wherein the cantilevered portion extends beyond a termination of the active area.

17. The BAW resonator as claimed in claim 1 , wherein the piezoelectric layer is doped with a rare-earth element that improves an acoustic coupling coefficient.

18. The BAW resonator as claimed in claim 17 , wherein the rare-earth element is scandium (Sc).

19. The BAW resonator as claimed in claim 1 , wherein the discontinuity is a first discontinuity and the bridge further comprises a second discontinuity.

20. An electrical filter, comprising a plurality of bulk acoustic wave (BAW) resonators, each of the plurality of BAW resonators comprising:

a first electrode;

a second electrode comprising a plurality of sides, wherein at least one of the sides is a connection side;

a piezoelectric layer disposed between the first and second electrodes, and

an acoustic reflective element disposed beneath the first electrode, the second electrode and the piezoelectric layer, wherein an overlap of the acoustic reflective element, the first electrode, the second electrode, and the piezoelectric layer defines an active area of the BAW;

a bridge adjacent to a termination of the active area of the BAW resonator;

a layer at least a part of which is disposed over a gap, and between the piezoelectric layer and the second electrode, the layer comprising a frame element, the frame element being disposed immediately adjacent to the termination of the active area; and

a discontinuity, which exists in the bridge.

21. The electrical filter as claimed in claim 20 , wherein the bridge comprises a plurality of layers, and the discontinuity in the bridge is in one of the layers in the bridge.

22. The electrical filter as claimed in claim 21 , wherein the one layer is a part of the second electrode.

23. The electrical filter as claimed in claim 21 , wherein the discontinuity comprises a recess in the one layer.

24. The electrical filter as claimed in claim 23 , wherein a material having a different acoustic impedance than an acoustic impedance of the one layer is disposed in the one layer.

25. The electrical filter as claimed in claim 21 , wherein the one layer is a passivation layer disposed over the second electrode.

26. The electrical filter as claimed in claim 21 , wherein the second electrode comprises a first layer and a second layer, and the one layer is one of the first and second layers.

27. The electrical filter as claimed in claim 20 , wherein the discontinuity is a first discontinuity and the bridge comprises a second discontinuity.

28. The electrical filter as claimed in claim 20 , wherein the discontinuity is a first discontinuity, and the BAW resonator further comprises at least a second discontinuity.

29. The electrical filter as claimed in claim 20 , wherein each of the BAW resonators further comprise a temperature compensation layer, and an interposer layer disposed over the piezoelectric layer, wherein the temperature compensation layer is disposed between the interposer layer and the second electrode.

30. The electrical filter as claimed in claim 20 , wherein the discontinuity has a width substantially equal to a ratio of a wavelength of a mode of one or more of the plurality of BAW resonators.

31. The electrical filter as claimed in claim 30 , wherein the ratio is substantially equal to one-quarter.

32. The electrical filter as claimed in claim 20 , wherein each of the BAW resonators further comprises a cantilevered portion on at least one of the plurality of sides that is not the connecting side.

33. The electrical filter as claimed in claim 20 , wherein the piezoelectric layer is doped with a rare-earth element that improves an acoustic coupling coefficient.

34. The electrical filter as claimed in claim 33 , wherein the rare-earth element is scandium (Sc).

35. A bulk acoustic wave (BAW) resonator, comprising:

a first electrode;

a second electrode comprising a plurality of sides, wherein at least one of the sides is a connection side;

a piezoelectric layer disposed between the first and second electrodes, and

an acoustic reflective element disposed beneath the first electrode, the second electrode and the piezoelectric layer, wherein a contacting overlap of the acoustic reflective element, the first electrode, the second electrode, and the piezoelectric layer defines an active area of the BAW resonator;

a bridge adjacent to a termination of the active area of the BAW resonator; and

a plurality of discontinuities, which exist across an entire width of the bridge.

36. The BAW resonator as claimed in claim 35 , wherein each of the plurality of discontinuities has a width that is substantially equal to a ratio of a wavelength of a mode of the BAW resonator.

37. The BAW resonator as claimed in claim 35 , further comprising a temperature compensation layer.

38. The BAW resonator as claimed in claim 37 , further comprising an interposer layer disposed over the piezoelectric layer, wherein the temperature compensation layer is disposed between the interposer layer and the second electrode.

39. The BAW resonator as claimed in claim 35 , wherein the plurality of discontinuities comprise a recess and a frame element.

40. The BAW resonator as claimed in claim 35 , wherein the bridge comprises a plurality of layers, and the plurality of discontinuities in the bridge are in only one of the layers in the bridge.

41. The BAW as claimed in claim 40 , wherein the one layer is a passivation layer disposed over the second electrode.

42. The BAW resonator as claimed in claim 40 , wherein the one layer is a part of the second electrode.

43. The BAW resonator as claimed in claim 42 , wherein a material having a different acoustic impedance than an acoustic impedance of the one layer is disposed in the one layer.

Assignments (3)
CORRECTIVE ASSIGNMENT TO CORRECT THE EXECUTION DATE OF THE MERGER AND APPLICATION NOS. 13/237,550 AND 16/103,107 FROM THE MERGER PREVIOUSLY RECORDED ON REEL 047231 FRAME 0369. ASSIGNOR(S) HEREBY CONFIRMS THE MERGER. Recorded Mar 8, 2019
From: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
To: AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITED
Reel/Frame 048549/0113 →
MERGER Recorded Oct 4, 2018
From: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
To: AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITED
Reel/Frame 047231/0369 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 26, 2016
From: THALHAMMER, ROBERT; SHIRAKAWA, ALEXANDRE; FAUST, THOMAS; NIKKEL, PHIL
To: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
Reel/Frame 038382/0100 →
Continuity (1)
Related Publication 20170310303A1 · Oct 26, 2017