Image sensor
As a control signal used for resetting a photodiode, a control signal for selecting an adjacent pixel row is used. Accordingly, the number of kinds of used control signals decreases, and a decrease in the area of the photodiode is prevented. In addition, a period in which all of a plurality of control signals selecting an adjacent pixel row are active is provided by setting an active period of a control signal selecting a pixel row to a period longer than a period in which a signal of one pixel row is read. Therefore, a CDS operation is realized.
1. An image sensor, comprising:
a photoelectric conversion device, a first transistor, a second transistor, and a third transistor arranged in each of pixels partitioned by a plurality of signal lines and a plurality of row selection lines, the signal lines and the row selection lines being vertically and horizontally arranged,
wherein the photoelectric conversion device has a first terminal connected to a gate terminal of the first transistor and a second terminal connected to a first power supply line,
wherein the first transistor has a drain terminal connected to a second power supply line and a source terminal connected to a drain terminal of the second transistor,
wherein the second transistor has a gate terminal connected to the row selection line and a source terminal connected to the signal line,
wherein the third transistor has a gate terminal connected to the row selection line of an adjacent pixel row, a drain terminal connected to a third power supply line, and a source terminal connected to the first terminal of the photoelectric conversion device,
wherein a signal is applied to the row selection line over an active period that is longer than a period in which a signal corresponding to one pixel row is read from the signal line, and
wherein the active period partly overlaps a period in which a signal is applied to an adjacent row selection line in time.
2. The image sensor according to claim 1 , further comprising:
a capacitor having one end connected to the first terminal of the photoelectric conversion device and the other end connected to the gate terminal of the third transistor.
3. The image sensor according to claim 1 ,
wherein, in a period in which signals of all the pixels are read, the number of periods in which a signal is applied to the row selection line is one.
4. The image sensor according to claim 1 , further comprising:
a signal processing circuit connected to one end of the signal line,
wherein the signal processing circuit outputs a difference between a voltage applied to the signal line during a period having an overlap in time with the active period and a voltage applied to the signal line during a period having no overlap in time with the active period.
5. The image sensor according to claim 1 ,
wherein each of the first transistor, the second transistor, and the third transistor is an n-type transistor,
wherein the photoelectric conversion device is a photodiode, and
wherein the first terminal is a cathode terminal of the photodiode, and the second terminal is an anode terminal of the photodiode.
6. The image sensor according to claim 5 ,
wherein a voltage applied to the first power supply line is lower than a voltage applied to the second power supply line.