Perovskite and other solar cell materials
Photovoltaic devices such as solar cells, hybrid solar cell-batteries, and other such devices may include an active layer disposed between two electrodes, the active layer having perovskite material and other material such as mesoporous material, interfacial layers, thin-coat interfacial layers, and combinations thereof. The perovskite material may be photoactive. The perovskite material may be disposed between two or more other materials in the photovoltaic device. Inclusion of these materials in various arrangements within an active layer of a photovoltaic device may improve device performance. Other materials may be included to further improve device performance, such as, for example: additional perovskites, and additional interfacial layers.
1. A photovoltaic device comprising:
a first electrode;
a second electrode; and
an active layer disposed at least partially between the first and second electrodes, the active layer comprising a perovskite material having the formula CBiX 3 ;
wherein C comprises one or more cations each selected from the group consisting of Group 1 metals, Group 2 metals, organic cations, and combinations thereof; and
wherein X comprises one or more anions each selected from the group consisting of halides.
2. The photovoltaic device of claim 1 , wherein C is selected from the group consisting of methylammonium, formamidinium, guanidinium, and cesium.
3. The photovoltaic device of claim 1 , wherein C is methylammonium, and X comprises one or more halides.
4. The photovoltaic device of claim 1 , wherein C is formamidinium, and X comprises one or more halides.
5. The photovoltaic device of claim 1 , wherein C is guanidinium, and X comprises one or more halides.
6. The photovoltaic device of claim 1 , wherein C is cesium, and X comprises one or more halides.
7. The photovoltaic device of claim 1 , wherein the active layer further comprises a first interfacial layer and a second interfacial layer.
8. The photovoltaic device of claim 7 , wherein the first interfacial layer is proximate to the first electrode and the second interfacial layer is proximate to the second electrode; and further wherein the first electrode is an anode and the second electrode is a cathode.
9. The photovoltaic device of claim 7 , wherein the perovskite material is disposed between and in contact with the first interfacial layer and the second interfacial layer.
10. A photovoltaic device comprising:
a first electrode;
a second electrode; and
an active layer disposed at least partially between the first and second electrodes, the active layer comprising:
a photoactive layer comprising a perovskite material having the formula CMX 3 ;
wherein C comprises one or more cations each selected from the group consisting of Group 1 metals, Group 2 metals, organic cations, and combinations thereof;
wherein M comprises Bi;
wherein X comprises one or more anions each selected from the group consisting of at least one halide, at least one group 16 anion, and combinations thereof.
11. The photovoltaic device of claim 10 , wherein C is methylammonium and X comprises one or more halides, and one or more oxide.
12. The photovoltaic device of claim 10 , wherein C is methylammonium and X comprises one or more halides, and one or more sulfide.
13. The photovoltaic device of claim 10 , wherein C is methylammonium and X comprises one or more halides, and one or more selenide.
14. The photovoltaic device of claim 10 , wherein C is methylammonium and X comprises one or more halides, and one or more telluride.
15. The photovoltaic device of claim 10 , wherein C is formamidinium and X comprises one or more halides, and one or more oxide.
16. The photovoltaic device of claim 10 , wherein C is formamidinium and X comprises one or more halides, and one or more sulfide.
17. The photovoltaic device of claim 10 , wherein C is formamidinium and X comprises one or more halides, and one or more selenide.
18. The photovoltaic device of claim 10 , wherein C is formamidinium and X comprises one or more halides, and one or more telluride.
19. The photovoltaic device of claim 10 , wherein C is guanidinium and X comprises one or more halides, and one or more oxide.
20. The photovoltaic device of claim 10 , wherein C is guanidinium and X comprises one or more halides, and one or more sulfide.
21. The photovoltaic device of claim 10 , wherein C is guanidinium and X comprises one or more halides, and one or more selenide.
22. The photovoltaic device of claim 10 , wherein C is guanidinium and X comprises one or more halides, and one or more telluride.
23. The photovoltaic device of claim 10 , wherein C is cesium and X comprises one or more halides, and one or more oxide.
24. The photovoltaic device of claim 10 , wherein C is cesium and X comprises one or more halides, and one or more sulfide.
25. The photovoltaic device of claim 10 , wherein C is cesium and X comprises one or more halides, and one or more selenide.
26. The photovoltaic device of claim 10 , wherein C is cesium and X comprises one or more halides, and one or more telluride.
27. The photovoltaic device of claim 10 , wherein C is formamidinium and X comprises I 2 Te.
28. The photovoltaic device of claim 10 , wherein the active layer further comprises a first interfacial layer and a second interfacial layer.
29. The photovoltaic device of claim 28 , wherein the first interfacial layer is proximate to the first electrode and the second interfacial layer is proximate to the second electrode; and further wherein the first electrode is an anode and the second electrode is a cathode.
30. The photovoltaic device of claim 28 , wherein the perovskite material is disposed between and in contact with the first interfacial layer and the second interfacial layer.