Compounds having semiconducting properties and related compositions and devices
Disclosed are new compounds having semiconducting properties. Such compounds can be processed in solution-phase at a temperature of less than about 50° C. into thin film semiconductors that exhibit high carrier mobility and/or good current modulation characteristics.
1. A compound having the formula IIa:
wherein R 1 and R 2 independently are a linear C 4-40 alkyl group; and m 1 and m 2 are 1.
2. The compound of claim 1 , wherein the compound has the formula:
3. The compound of claim 1 , wherein R 1 and R 2 independently are selected from n-C 4 H 9 , n-C 5 H 11 , n-C 6 H 13 , n-C 7 H 15 , n-C 8 H 17 , n-C 9 H 19 , n-C 10 H 21 , n-C 11 H 23 , and n-C 12 H 25 .
4. A thin film semiconductor comprising a compound of claim 1 .
5. An electronic device, an optical device, or an optoelectronic device comprising the thin film semiconductor of claim 4 .
6. A field effect transistor device comprising a source electrode, a drain electrode, a gate electrode, and the thin film semiconductor of claim 4 in contact with a dielectric material.
7. The field effect transistor device of claim 6 , wherein the field effect transistor has a structure selected from top-gate bottom-contact structure, bottom-gate top-contact structure, top-gate top-contact structure, and bottom-gate bottom-contact structure.
8. The field effect transistor device of claim 6 , wherein the dielectric material comprises an organic dielectric material.
9. The field effect transistor device of claim 6 , wherein the dielectric material comprises an inorganic dielectric material or a hybrid organic/inorganic dielectric material.
10. A light emitting transistor device comprising a source electrode, a drain electrode, a gate electrode, a dielectric material, and a photoactive component comprising a compound of claim 1 , wherein the photoactive component is in contact with the dielectric material.
11. The light emitting transistor device of claim 10 , wherein the photoactive component comprises a laminate of two or more layers.
12. The light emitting transistor device of claim 11 , wherein the laminate comprises a light emitting layer and one or more organic charge transport layers.
13. The light emitting transistor device of claim 10 , wherein the compound of claim 1 is present in a blend material.