Semiconductor memory device

1. A semiconductor memory device comprising:

a first memory cell capable of storing data of n bits (n is a natural number equal to 2 or more);

a control circuit configured to receive a first data of n bits and write the first data into the first memory cell in a first program sequence, and receive a second data smaller than the first data and write the first data into the first memory cell by using the second data in a second program sequence,

wherein the second data is acquired by executing an arithmetic operation of exclusive NOR with respect to the first data.

2. The semiconductor memory device according to claim 1 ,

wherein the second data is generated from the first data.

3. The semiconductor memory device according to claim 1 ,

wherein the second program sequence is executed after a write operation is executed to a second memory cell adjacent to the first memory cell.

4. The semiconductor memory device according to claim 1 ,

wherein the first and second program sequences include read voltages, and kinds of read voltages in the first program sequence are fewer than kinds of read voltages in the second program sequence.

5. The semiconductor memory device according to claim 4 ,

wherein when the read voltages used for write verify of the first memory cell in the first program sequence are referred to as A, B, and C (A<B<C), the read voltages in the second program sequence include E (B<E<C) and A.

6. The semiconductor memory device according to claim 5 ,

wherein the control circuit applies a first write voltage to the first memory cell after the reading is executed by the read voltages E and A in the second program sequence, the first write voltage is bigger than the read voltages E and A.

7. The semiconductor memory device according to claim 4 ,

wherein when the read voltages used for write verify of the first memory cell in the first program sequence are referred to as A, B, and C (A<B<C), the read voltages in the second program sequence include E (B<E<C) and A, D (A<D<B) and B, and E (B<E<C) and C.

8. The semiconductor memory device according to claim 7 ,

wherein the control circuit applies a first write voltage to the first memory cell, after a reading is executed by the read voltages E and A in the second program sequence, applies a second write voltage to the first memory cell, after a reading is executed by the read voltages D and B in the second program sequence, and applies a third write voltage to the first memory cell, after a reading is executed by the read voltages E and C in the second program sequence.

9. The semiconductor memory device according to claim 1 ,

wherein the second program sequence includes a reading by a first read voltage and a reading by a second read voltage different from the first read voltage with respect to the first memory cell.

10. The semiconductor memory device according to claim 1 ,

further comprising memory cells which includes the first memory cell,

wherein the memory cells are arranged three-dimensionally on a semiconductor substrate.

11. The semiconductor memory device according to claim 1 ,

wherein the control circuit is controlled by at least one of control signals Address Latch Enable (ALE), Command Latch Enable (CLE), Write Enable (WE), and Read Enable (RE).

12. The semiconductor memory device according to claim 1 ,

wherein after end of the second program sequence, the first program sequence is again executed.

13. The semiconductor memory device according to claim 1 ,

wherein in the second program sequence, the control circuit reads data stored in the first memory cell,

restores the first data based on the data read from the first memory cell and the second data, and

writes the restored first data into the first memory cell.

14. The semiconductor memory device according to claim 1 ,

further comprising a data circuit configured to receive the first data to be written into the first memory cell in the first program sequence and to receive the second data in the second program sequence.