Power converter topology for use in an energy storage system
Systems and methods associated with example power converter systems are disclosed. For instance, a power converter system can include a power converter couplable to an input power source and configured to generate an output power substantially at a grid frequency. The power converter can include one or more inverter bridge circuits, each associated with an output phase of the power converter. Each inverter bridge circuit can include one or more first switching modules having a pair of switching elements coupled in series with one another, and an output coupled between the pair of switching elements. At least one switching element of each first switching module includes a reverse blocking transistor. The power converter further includes one or more input bridge circuits having a plurality of second switching modules coupled in parallel, each second switching module comprising a pair of silicon carbide transistors.
1. An energy storage system comprising:
an input power source configured to provide DC power;
a power converter couplable to the input power source and configured to generate AC power substantially at a grid frequency, the power converter comprising:
a first stage configured to boost the DC power, the first stage comprising one or more input bridge circuits comprising a plurality of input switching modules coupled in parallel, each input switching module of the plurality of input switching modules comprising a pair of silicon carbide transistors; and
a second stage configured to convert the boosted DC power to the AC power, the second stage comprising one or more inverter bridge circuits, each associated with an output phase of the power converter, each inverter bridge circuit comprising one or more inverter switching modules, each inverter switching module comprising a pair of switching elements coupled in series with one another and an output coupled between the pair of switching elements, wherein at least one switching element of each inverter switching module comprises a reverse blocking transistor.
2. The energy storage system of claim 1 , wherein the reverse blocking transistor is a reverse blocking insulated-gate bipolar transistor, and wherein the silicon carbide transistors are silicon carbide metal-oxide semiconductor field-effect transistors.
3. The energy storage system of claim 1 , wherein the one or more inverter switching modules comprise an upper switching element and a lower switching element.
4. The energy storage system of claim 3 , wherein the upper switching element in each first switching element comprises a pair of reverse blocking insulated-gate bipolar transistors coupled in an antiparallel manner, and wherein the lower switching element in each first switching element is an insulated-gate bipolar transistor coupled to a diode in an antiparallel manner.
5. A power converter system, comprising:
a power converter couplable to an input power source and configured to generate AC power substantially at a grid frequency, the power converter comprising:
a first stage configured to boost DC power provided by the input power source; and
a second stage configured to convert the boosted DC power to the AC power, the second stage comprising one or more inverter bridge circuits, each associated with an output phase of the power converter, each inverter bridge circuit comprising one or more first switching modules, each first switching module comprising a pair of switching elements coupled in series with one another and an output coupled between the pair of switching elements, wherein at least one switching element of each first switching module comprises a reverse blocking transistor.
6. The power converter system of claim 5 , wherein the first stage of the power converter comprises one or more input bridge circuits, each comprising a plurality of second switching modules coupled in parallel, each second switching module comprising a pair of silicon carbide transistors.
7. The power converter system of claim 5 , wherein the reverse blocking transistor is a reverse blocking insulated-gate bipolar transistor, and wherein the silicon carbide transistors are silicon carbide metal-oxide semiconductor field-effect transistors.
8. The power converter system of claim 6 , wherein each input bridge circuit is couplable to the input power source and configured to generate the boosted DC power and provide the boosted DC power to a DC link, the DC link coupling the input bridge circuit to the inverter bridge circuit.
9. A power converter system of claim 5 , wherein at least one switching element of each first switching module comprises a pair of reverse blocking insulated-gate bipolar transistors coupled in an antiparallel manner.
10. The power converter system of claim 5 , further comprising an isolation transformer coupled between two second switching modules.
11. The power converter system of claim 10 , wherein the isolation transformer is a high frequency planar transformer.
12. The power converter system of claim 5 , wherein each switching element in the one or more first switching modules comprises a reverse blocking insulated-gate bipolar transistor.
13. The power converter system of claim 5 , wherein each switching element in the one or more first switching modules comprises a pair of reverse blocking insulated-gate bipolar transistors coupled in an antiparallel manner.
14. The power converter system of claim 1 , wherein the power converter provides a multiphase output power, the power converter comprising an inverter bridge circuit associated with each output phase of the multiphase output power.
15. The power converter system of claim 1 , wherein the one or more first switching modules comprise an upper switching element and a lower switching element.
16. The power converter system of claim 15 , wherein the upper switching element in each first switching element comprises a pair of reverse blocking insulated-gate bipolar transistors coupled in an antiparallel manner.
17. A power converter system of claim 16 , wherein the lower switching element in each first switching element is an insulated-gate bipolar transistor, wherein a diode is coupled in an antiparallel manner to the insulated-gate bipolar transistor.
18. A method of providing at least a single phase of AC power to an electrical grid, the method comprising:
receiving DC power at a first stage of a power converter, the first stage comprising one or more input switching modules configured to boost the DC power;
providing the boosted DC power to a DC link of the power converter;
receiving the boosted DC power at a second stage of the power converter, the second stage comprising one or more inverter switching modules configured to convert the boosted DC power to the AC power, the one or more inverter switching modules comprising at least one reverse blocking transistor; and
providing at least a single phase of the AC power to the electrical grid.
19. The method of claim 18 , wherein the at least one reverse blocking transistor is a reverse blocking insulated-gate bipolar transistor, and wherein the one or more input switching modules comprise one or more silicon carbide metal-oxide semiconductor field-effect transistors.
20. The method of claim 18 , wherein at least one inverter switching module comprises a pair of reverse blocking insulated-gate bipolar transistors coupled in an antiparallel manner.