Photoresist compositions and methods
New photoresists are provided that are useful in a variety of applications, including negative-tone development processes. Preferred resists comprise a first polymer that comprises (i) first units comprising a nitrogen-containing moiety that comprises an acid-labile group; and (ii) second units that (1) comprise one or more hydrophobic groups and (2) are distinct from the first units.
1. A photoresist composition comprising:
(a) a first polymer comprising:
(i) first units comprising a nitrogen-containing moiety that comprises an acid-labile group;
(ii) second units that (1) comprise one or more hydrophobic groups and (2) are distinct from the first units,
(iii) third units that (1) comprise one or more hydrophobic groups and (2) are distinct from the first and second units, and wherein the first polymer is free of silicon or flourine;
(b) one or more acid generators; and
(c) a second polymer that (1) comprises acid-labile groups and (2) is distinct from the first polymer.
2. The photoresist composition of claim 1 wherein the one or more hydrophobic groups of the second and third units each comprise three or more carbon atoms.
3. The photoresist composition of claim 1 wherein the nitrogen-containing moiety is a protected amine.
4. The photoresist composition of claim 1 wherein the nitrogen-containing moiety can be deprotected in the presence of acid during lithographic processing.
5. The photoresist composition of claim 1 wherein the nitrogen-containing moiety is a carbamate or sulfamate.
6. The photoresist composition of claim 1 wherein the (i) units comprising a nitrogen-containing moiety further comprise a hydrophobic group.
7. The photoresist composition of claim 1 wherein the first polymer is substantially non-miscible with the second polymer.
8. A method for forming a photolithographic pattern, comprising:
(a) applying a layer of a photoresist composition of claim 7 on a substrate;
(b) patternwise exposing the photoresist composition layer to activating radiation; and
(c) developing the exposed photoresist composition layer to provide a photoresist relief image.
9. The method of claim 8 wherein the exposed photoresist composition layer is developed with an organic solvent composition that selectively removes unexposed portions of the photoresist composition layer to provide the photoresist relief image.
10. The method of claim 8 where the photoresist composition layer is exposed to 193 nm radiation.
11. The method of claim 8 wherein the photoresist composition layer is immersion exposed to activating radiation.
12. A method for forming a photolithographic pattern, comprising:
(a) applying a layer of a photoresist composition of claim 1 on a substrate;
(b) patternwise exposing the photoresist composition layer to activating radiation; and
(c) developing the exposed photoresist composition layer to provide a photoresist relief image.
13. The method of claim 12 wherein the exposed photoresist composition layer is developed with an organic solvent composition that selectively removes unexposed portions of the photoresist composition layer to provide the photoresist relief image.
14. The method of claim 12 where the photresist composition layer is exposed to 193 nm radiation.
15. The method of claim 12 where the photresist composition layer is exposed to EUV nm radiation.