Perovskite and other solar cell materials
Photovoltaic devices such as solar cells, hybrid solar cell-batteries, and other such devices may include an active layer disposed between two electrodes, the active layer having perovskite material and other material such as mesoporous material, interfacial layers, thin-coat interfacial layers, and combinations thereof. The perovskite material may be photoactive. The perovskite material may be disposed between two or more other materials in the photovoltaic device. Inclusion of these materials in various arrangements within an active layer of a photovoltaic device may improve device performance. Other materials may be included to further improve device performance, such as, for example: additional perovskites, and additional interfacial layers.
1. A photovoltaic device comprising:
a first electrode;
a second electrode;
an active layer disposed at least partially between the first and second electrodes, the active layer comprising:
photoactive material comprising a perovskite material;
a first interfacial layer comprising NiO; and
a second interfacial layer comprising carbon nanotubes.
2. The photovoltaic device of claim 1 , wherein the perovskite material has the formula CMX 3 , wherein C comprises one or more cations each selected from the group consisting of Group 1 metals, Group 2 metals, organic cations, and combinations thereof;
wherein M comprises one or more metals each selected from the group consisting of Fe, Co, Ni, Cu, Sn, Pb, Bi, Ge, Ti, Zn, and combinations thereof; and
wherein X comprises one or more anions each selected from the group consisting of halides, group 16 anions, and combinations thereof.
3. The photovoltaic device of claim 2 , wherein C is methylammonium, M is Pb, and wherein X comprises one or more halides.
4. The photovoltaic device of claim 2 , wherein C is methylammonium, M is Sn, and wherein X comprises one or more halides.
5. The photovoltaic device of claim 2 , wherein C is a formamidinium, M is Pb, and wherein X comprises one or more halides.
6. The photovoltaic device of claim 2 , wherein C is a formamidinium, M is Sn, and wherein X comprises one or more halides.
7. The photovoltaic device of claim 2 , wherein C is a guanidinium, M is Pb, and wherein X comprises one or more halides.
8. The photovoltaic device of claim 2 , wherein C is a guanidinium, M is Sn, and wherein X comprises one or more halides.
9. The photovoltaic device of claim 2 , wherein C is cesium, M is Pb, and wherein X comprises one or more halides.
10. The photovoltaic device of claim 2 , wherein C is cesium, M is Sn, and wherein X comprises one or more halides.
11. The photovoltaic device of claim 1 , wherein the perovskite material is disposed at least partially between and in contact with each of the first interfacial layer and the second interfacial layer.
12. A photovoltaic device comprising:
a first electrode;
a second electrode; and
an active layer disposed at least partially between the first and second electrodes, the active layer comprising NiO, a perovskite material, and carbon, wherein the perovskite material has the formula CMX 3 and is disposed at least partially between and in contact with each of the NiO and the carbon;
wherein C comprises one or more cations each selected from the group consisting of Group 1 metals, Group 2 metals, organic cations, and combinations thereof;
wherein M comprises one or more metals each selected from the group consisting of Fe, Co, Ni, Cu, Sn, Pb, Bi, Ge, Ti, Zn, and combinations thereof;
wherein X comprises one or more anions each selected from the group consisting of halides, group 16 anions, and combinations thereof; and
wherein the carbon comprises carbon nanotubes.
13. The photovoltaic device of claim 12 , wherein C is methylammonium, M is Pb, and wherein X comprises one or more halides.
14. The photovoltaic device of claim 12 , wherein C is methylammonium, M is Sn, and wherein X comprises one or more halides.
15. The photovoltaic device of claim 12 , wherein C is a formamidinium, M is Pb, and wherein X comprises one or more halides.
16. The photovoltaic device of claim 12 , wherein C is a formamidinium, M is Sn, and wherein X comprises one or more halides.
17. The photovoltaic device of claim 12 , wherein C is a guanidinium, M is Pb, and wherein X comprises one or more halides.
18. The photovoltaic device of claim 12 , wherein C is a guanidinium, M is Sn, and wherein X comprises one or more halides.
19. The photovoltaic device of claim 12 , wherein C is cesium, M is Pb, and wherein X comprises one or more halides.
20. The photovoltaic device of claim 12 , wherein C is cesium, M is Sn, and wherein X comprises one or more halides.
21. The photovoltaic device of claim 12 , wherein the NiO forms at least a part of an interfacial layer.
22. The photovoltaic device of claim 12 , wherein the carbon forms at least part of an interfacial layer.