IP Library Granted Patent US 9,742,466
Granted Patent B2
US 9,742,466 · App. 15/146,740 · Granted Aug 22, 2017

MOSCAP-based circuitry for wireless communication devices, and methods of making and using the same

Inventor: Somnath Mukherjee (Milpitas, CA)
Assignee: Thin Film Electronics ASA
H04B5/0012H04B1/04H04B1/16H01L23/66H01L29/94H01L2223/6677H01L2924/14H01L2924/19041H01L2924/19105
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Quick Facts
Patent No.
US 9,742,466
App. No.
15/146,740
Granted
Aug 22, 2017
Kind
B2
Abstract

A wireless (e.g., near field or RF) communication device, and methods of manufacturing and using the same are disclosed. The wireless communication device includes a receiver and/or transmitter, a substrate with an antenna thereon, an integrated circuit, and one or more continuity sensors. The antenna receives and/or backscatters a wireless signal. The integrated circuit processes the wireless signal and/or information therefrom, and/or generates the wireless signal and/or information therefor. The continuity sensor(s) are configured to sense or determine the presence of a chemical or substance in the package or container, and thus a continuity state of a package or container on which the communication device is placed or to which the communication device is fixed or adhered. The continuity sensor(s) are electrically connected to a set of terminals of the integrated circuit different from the set of terminals to which the antenna is electrically connected.

Claims (34)

1. A non-linear capacitor, comprising:

a) a first electrode, comprising a printed doped polysilicon body having source and drain terminals electrically connected to a common node;

b) a dielectric layer in contact with the first electrode, and

c) a second electrode spaced apart from the first electrode by the dielectric layer, comprising a printed doped polysilicon gate;

wherein said capacitor is configured to generate intermodulation components from (i) a main carrier signal from a first source at a first frequency of from 1 MHz to 10 GHz and a first power and (ii) a sub-carrier signal from a second source at a second frequency and a second power, the intermodulation components having different frequencies from the first frequency and substantially less power than the first power.

2. The non-linear capacitor of claim 1 , wherein the dielectric layer comprises a silicon oxide.

3. The non-linear capacitor of claim 1 , wherein the dielectric layer has a substantially constant thickness.

4. The non-linear capacitor of claim 1 , further comprising a substrate, wherein the first electrode is on the substrate, the dielectric layer is on the first electrode, and the second electrode is on the dielectric layer.

5. A wireless device, comprising:

a) the non-linear capacitor of claim 1 ; and

b) an antenna, wherein a first end, pole or terminal of the antenna is electrically connected to the first electrode of the non-linear capacitor, and a second end, pole or terminal of the antenna is electrically connected to the second electrode of the non-linear capacitor.

6. The wireless device of claim 5 , further comprising a receiver electrically connected to the non-linear capacitor when the wireless device receives a wireless signal, and a transmitter or signal generator electrically connected to the non-linear capacitor when the wireless device backscatters a wireless signal.

7. The wireless device of claim 6 , further comprising a battery that supplies power to the receiver and the transmitter or signal generator.

8. The wireless device of claim 5 , further comprising a switch electrically connected to one of the first and second electrodes of the non-linear capacitor.

9. The wireless device of claim 8 , further comprising a power supply or ground potential, electrically connected to the other one of the first and second electrodes of the non-linear capacitor.

10. The wireless device of claim 8 , wherein the switch has a first state when the wireless device receives a wireless signal, and the switch has a second state when the wireless device backscatters a wireless signal.

11. The wireless device of claim 10 , further comprising a decoder and/or demodulator electrically connected to the non-linear capacitor when the wireless device receives a wireless signal, and an encoder or signal generator electrically connected to the non-linear capacitor when the wireless device backscatters a wireless signal.

12. The wireless device of claim 5 , further comprising an oscillator coupled to electrically functional circuitry in the wireless device.

13. The wireless device of claim 5 , further comprising a memory configured to store at least identification data or code.

14. The wireless device of claim 5 , further comprising a sensor configured to detect a state of the wireless device or an environmental parameter.

15. A method of processing a wireless signal, comprising:

a) receiving the wireless signal at the wireless device of claim 5 ; and

b) processing the wireless signal using the wireless device.

16. A method of generating a wireless signal, comprising:

a) generating a modulated signal in the wireless device of claim 5 ; and

b) mixing the modulated signal with another signal having a higher frequency than the modulated signal using the non-linear capacitor; and

c) backscattering, transmitting or broadcasting the mixed, modulated signal using the antenna.

17. The method of claim 16 , wherein the non-linear capacitor comprises a MOSCAP device, and the modulated signal has a frequency greater than a cut-off frequency of a transistor corresponding to the MOSCAP device.

18. The method of claim 16 , wherein the modulated signal has a frequency of y Hz, and the mixed, modulated signal has a frequency of x±n*y Hz, where x is a frequency of the other signal having the higher frequency, n is an integer of 1 or 2, and x>>n*y.

19. The method of claim 16 , further comprising electrically connecting a modulator configured to generate the modulated signal to the non-linear capacitor when the wireless device backscatters the mixed, modulated signal.

20. The non-linear capacitor of claim 1 , wherein the first frequency is from 10 MHz-1 GHz.

21. The non-linear capacitor of claim 20 , wherein the second frequency is from 1 KHz to <10,000 KHz.

22. The non-linear capacitor of claim 1 , wherein the non-linear capacitor is configured to operate at a frequency higher than a cut-off frequency of an otherwise identical transistor in which the source and drain terminals are electrically connected to different nodes.

23. The non-linear capacitor of claim 1 , wherein the non-linear capacitor carries a displacement current, but not a conduction current using charge carriers.

Assignments (2)
CHANGE OF NAME Recorded Aug 22, 2022
From: THIN FILM ELECTRONICS ASA
To: ENSURGE MICROPOWER ASA
Reel/Frame 061298/0249 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 24, 2016
From: MUKHERJEE, SOMNATH
To: THIN FILM ELECTRONICS ASA
Reel/Frame 038805/0687 →
Continuity (2)
Provisional Application 62156687 · May 4, 2015
Related Publication 20160329931A1 · Nov 10, 2016