Packaging structure, display device, and fabrication method thereof
A packaging structure includes at least one inorganic layer and at least one passivation layer. The at least one passivation layer includes a halogen-containing amorphous solid oxide thin film. The amorphous solid oxide thin film in the at least one passivation layer has a crosslinked-polyhedra-network structure. A display device includes a substrate, a display layer, and a packaging structure. The packaging structure further includes at least one inorganic layer and at least one passivation layer. The at least one passivation layer includes a halogen-containing amorphous solid oxide thin film. The amorphous solid oxide thin film in the at least one passivation layer has a crosslinked-polyhedra-network structure. A method for fabricating a display device includes providing a substrate, forming a display layer over the substrate, and forming a packaging structure over the display layer with the packaging structure including at least one inorganic layer and at least one passivation layer.
1. A packaging structure for a display device, comprising:
at least one inorganic layer and at least one passivation layer,
wherein:
the at least one passivation layer includes a halogen-containing amorphous solid oxide thin film having a crosslinked-polyhedra-network structure,
the at least one passivation layer includes a first active thin-film layer and a second active thin-film layer,
a mole ratio of oxygen atom to halogen atom in the first active thin-film layer is lower than a mole ratio of oxygen atom to halogen atom in the second active thin-film layer,
the at least one passivation layer covers an entire surface of the at least one inorganic layer,
the at least one inorganic layer is arranged between a display layer of the display device and the at least one passivation layer, and directly combined with the display layer,
the first active thin-film layer in the at least one passivation layer is arranged between the display layer of the display device and the second active thin-film layer in the at least one passivation layer, and
the first active thin-film layer has a chemical formula of Bi 0.6-0.8 Si 0.1-0.25 Sn 0.3-0.4 W 0.1.-0.15 O 0.3-0.8 F 0.6-0.8 .
2. The packaging structure according to claim 1 , wherein:
the crosslinked-polyhedra-network structure includes a plurality of polyhedra randomly crosslinked with each other; and
each polyhedron in the crosslinked-polyhedra-network structure includes a plurality of atoms linked through chemical bonds.
3. The packaging structure according to claim 2 , wherein the crosslinked-polyhedra-network structure further includes a plurality of two-dimensional chemical bond structures.
4. The packaging structure according to claim 1 , wherein:
in the at least one passivation layer, the second active thin-film layer covers the first active thin-film layer; and
the second active thin-film layer is formed by introducing free oxygen atoms into a surface of the first active thin-film layer, such that the second active layer is microscopically combined with the first active thin-film layer at the surface of the first active thin-film layer.
5. The packaging structure according to claim 4 , wherein the second active thin-film layer contains more free oxygen atoms than the first active thin-film layer.
6. The packaging structure according to claim 4 , wherein a maximum penetration depth of the free oxygen atoms in the second active thin-film layer is 2 μm.
7. The packaging structure according to claim 1 , wherein the halogen-containing amorphous solid oxide thin film includes one or more of Bi 2 O 3 , Al 2 O 3 , V 2 O 5 , TiO 2 , P 2 O 5 , SiO 2 , B 2 O 3 , and TeO 2 .
8. The packaging structure according to claim 1 , wherein the at least one passivation layer includes a fluorine-containing Bi 2 O 3 thin film, a fluorine-containing SiO 2 thin film, or a fluorine-containing composite thin film of Bi 2 O 3 and SiO 2 .
9. The packaging structure according to claim 1 , wherein:
the halogen atom in the second active thin-film layer is a fluorine atom;
a mole ratio of the oxygen atom to the fluorine atom in the second active thin-film layer is larger than 0.5 but smaller than or equal to 0.9.
10. The packaging structure according to claim 1 , wherein:
a thickness of the first active thin-film layer is in a range of 100 nm to 10 μm; and
a thickness of the second active thin-film layer is in a range of 100 nm to 2 μm.
11. The packaging structure according to claim 1 , wherein the halogen-containing amorphous solid oxide thin film also includes tin atoms and tungsten atoms.
12. The packaging structure according to claim 1 , wherein the at least one inorganic layer is made of one or more of SiO 2 , AlO x , SiN, SiON, and SiOC.
13. The packaging structure according to claim 1 , wherein a weight percentage of Bi 2 O 3 is in a range of 60% to 80%.
14. A packaging structure for a display device, comprising:
at least one inorganic layer and at least one passivation layer,
wherein:
the at least one passivation layer includes a halogen-containing amorphous solid oxide thin film; and
the amorphous solid oxide thin film in the at least one passivation layer has a crosslinked-polyhedra-network structure,
wherein the at least one passivation layer includes a first active thin-film layer and a second active thin-film layer,
a mole ratio of oxygen atom to halogen atom in the first active thin-film layer is lower than a mole ratio of oxygen atom to halogen atom in the second active thin-film layer,
the at least one passivation layer covers an entire surface of the at least one inorganic layer,
the at least one inorganic layer is arranged between the display device and the at least one passivation layer, and
the first active thin-film layer in the at least one passivation layer is arranged between the display device and the second active thin-film layer in the at least one passivation layer,
wherein the first active thin-film layer has a chemical formula of Bi 0.6-0.8 Si 0.1-0.25 Sn 0.3-0.4 W 0.1-0.15 O 0.3-0.8 F 0.6-0.8 , and the second active thin-film layer has a chemical formula of Bi 0.6-0.8 Si 0.1-0.25 Sn 0.3-0.4 W 0.1-0.15 O 0.3-0.4 F 0.6-0.8 .
15. The packaging structure for a display device according to claim 14 , wherein:
the crosslinked-polyhedra-network structure includes a plurality of polyhedra randomly crosslinked with each other; and
each polyhedron in the crosslinked-polyhedra-network structure includes a plurality of atoms linked through chemical bonds.
16. The packaging structure according to claim 15 , wherein the crosslinked-polyhedra-network structure further includes a plurality of two-dimensional chemical bond structures.
17. The packaging structure according to claim 14 , wherein:
a thickness of the first active thin-film layer is in a range of 100 nm to 10 μm; and
a thickness of the second active thin-film layer is in a range of 100 nm to 2 μm.