Recording read heads with a multi-layer AFM layer methods and apparatuses
Apparatuses and methods of recording read heads with a multi-layer anti-ferromagnetic (AFM) layer are provided. The AFM layer has gradient Manganese (Mn) compositions. A multi-layer AFM layer comprises a plurality of sub-layers having different Mn compositions. An upper sub-layer has a higher Mn composition than an lower sub-layer. Different types of gases may be used to deposit each sub-layer and the flow of each gas may be adjusted.
1. A method of manufacturing a read head, comprising:
fabricating a multi-layer anti-ferromagnetic (AFM) layer, the multi-layer AFM layer comprising a first AFM sub-layer and a second AFM sub-layer, the first AFM sub-layer and the second AFM sub-layer having different Manganese (Mn) compositions, wherein the fabricating the multi-layer AFM layer comprises:
depositing the first AFM sub-layer from a target using a first sputtering gas, and
depositing the second AFM sub-layer on top of the first AFM sub-layer from the target using a second sputtering gas, the second sputtering gas different from the first sputtering gas; and
sandwiching the multi-layer AFM layer between a pinned layer and a spacer layer:
wherein the second AFM sub-layer has a higher Mn composition than the first AFM sub-layer: and wherein the first AFM sub-layer is disposed directly on the spacer layer, the second AFM sub-layer is disposed directly on the first AFM sub-layer, and the pinned layer is disposed directly on the second AFM sub-layer.
2. The method of claim 1 , wherein the AFM layer has gradient Manganese (Mn) compositions.
3. The method of claim 1 , wherein the first AFM sub-layer comprises a first iridium manganese (IrMn) film and the second AFM sub-layer comprises a second IrMn film.
4. The method of claim 3 , wherein the Mn composition of the second Mn film is between 77% to 84%.
5. The method of claim 3 , wherein the Mn composition of the first IrMn film is less than 77%.
6. The method of claim 1 , wherein the first sputtering gas is Argon gas and the second sputtering gas is Krypton gas.
7. The method of claim 1 , wherein the graded multi-layer AFM layer is obtained by controlling a first gas flow rate of the first sputtering gas and a second gflow rate of the second sputtering gas.
8. The method of claim 7 , wherein a first Mn composition of the first AFM sub-layer is insensitive to the first gas flow rate of the first sputtering gas, and a second Mn composition of the second AFM sub-layer is sensitive to the second gas flow rate of the second sputtering gas.
9. The method of claim 8 , wherein different Mn compositions in the first AFM sub-layer and the second AFM sub-layer is obtain by controlling the first gas flow rate and the second gas flow rate.