IP Library Granted Patent US 11,004,994
Granted Patent B2
US 11,004,994 · App. 15/154,532 · Granted May 11, 2021

Solar cell and method of manufacturing the same

Inventors: Indo Chung (Seoul, KR); Juhong Yang (Seoul, KR); Eunjoo Lee (Seoul, KR); Mihee Heo (Seoul, KR)
Assignee: LG ELECTRONICS INC.
H01L31/049H01L31/02008H01L31/02167H01L31/02168H01L31/02366H01L31/022441H01L31/0747H01L31/1804H01L31/1868Y02E10/547Y02P70/50
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Quick Facts
Patent No.
US 11,004,994
App. No.
15/154,532
Granted
May 11, 2021
Kind
B2
Abstract

Disclosed is a solar cell including a semiconductor substrate, a conductive area including a first conductive area and a second conductive area formed on one surface of the semiconductor substrate, a passivation film formed on the conductive area, the passivation film having a contact hole, a protective film formed on the conductive area inside the contact hole, the protective film being formed on at least one of at least a portion of an inner side surface of the contact hole and the passivation film, and an electrode electrically connected to the conductive area through the contact hole with the protective film interposed therebetween.

Claims (11)

1. A solar cell comprising:

a semiconductor substrate;

a conductive area formed on a surface of the semiconductor substrate;

a passivation film including a first layer directly formed on the conductive area and having a first contact hole and a second layer directly formed on the first layer and having a second contact hole having a size smaller than a size of the first contact hole;

an electrode electrically connected to the conductive area through the first and second contact holes, wherein the electrode comprises a first electrode region filled in the first contact hole to form an empty space between the first layer and the electrode and a second electrode region filled in the second contact hole not to form an empty space between the second layer and the electrode; and

a silicon oxide film formed on an interface between the conductive area and the first electrode region thereby preventing a direct contact of the conductive area and the first electrode region.

2. The solar cell according to claim 1 , wherein the conductive area comprises a first conductive area and a second conductive area formed on the surface of the semiconductor substrate, and

wherein the solar cell further comprises a barrier area formed on the surface of the semiconductor substrate, and located between the first conductive area and the second conductive area.

3. The solar cell according to claim 1 , wherein the electrode further comprises a third electrode region that is outside of the first and second contact holes, and

wherein the third electrode region is formed on the first and second layers so that the third electrode region overlaps the first and second layers.

4. The solar cell according to claim 1 , wherein the empty space is formed only in the first layer.

Assignments (4)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 18, 2024
From: SHANGRAO XINYUAN YUEDONG TECHNOLOGY DEVELOPMENT CO., LTD.
To: TRINA SOLAR CO., LTD.
Reel/Frame 066802/0483 →
CHANGE OF NAME Recorded Dec 11, 2023
From: SHANGRAO JINKO SOLAR TECHNOLOGY DEVELOPMENT CO., LTD
To: SHANGRAO XINYUAN YUEDONG TECHNOLOGY DEVELOPMENT CO. LTD
Reel/Frame 066044/0299 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 28, 2022
From: LG ELECTRONICS INC.
To: SHANGRAO JINKO SOLAR TECHNOLOGY DEVELOPMENT CO., LTD
Reel/Frame 061571/0754 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 27, 2016
From: CHUNG, INDO; YANG, JUHONG; LEE, EUNJOO; HEO, MIHEE
To: LG ELECTRONICS INC.
Reel/Frame 038738/0470 →
Priority Claims (2)
KR 10-2015-0066630 · May 13, 2015 · national
KR 10-2016-0041767 · Apr 5, 2016 · national
Continuity (1)
Related Publication 20160336468A1 · Nov 17, 2016