IP Library Granted Patent US 10,167,567
Granted Patent B2
US 10,167,567 · App. 15/154,986 · Granted Jan 1, 2019

High resistance virtual anode for electroplating cell

Inventors: Po-Wei Wang (Taichung, TW); Chun-Lin Chang (Hsinchu County, TW)
Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
C25D17/12C25D17/001C25D17/007C25D17/008
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Quick Facts
Patent No.
US 10,167,567
App. No.
15/154,986
Granted
Jan 1, 2019
Kind
B2
Abstract

A high resistance virtual anode for an electroplating cell includes a first layer and a second layer. The first layer includes a plurality of first holes through the first layer. The second layer is over the first layer and includes a plurality of second holes through the second layer.

Claims (39)

1. A high resistance virtual anode for an electroplating cell, comprising:

a first layer comprising a plurality of first holes through the first layer; and

a second layer over the first layer and comprising a plurality of second holes through the second layer, wherein:

the first layer comprises a rotatable central portion and a rotatable peripheral portion surrounding the rotatable central portion,

a first portion of the first holes are through the rotatable central portion of the first layer, and

a second portion of the first holes are through the rotatable peripheral portion of the first layer.

2. The high resistance virtual anode for the electroplating cell of claim 1 , wherein one of the first holes is configured to partially or fully overlap with one of the second holes.

3. The high resistance virtual anode for the electroplating cell of claim 1 , wherein the rotatable peripheral portion comprises a plurality of rotatable ring-shaped portions coaxially surrounding the rotatable central portion.

4. The high resistance virtual anode for the electroplating cell of claim 1 , wherein one of the first portion of the first holes has a maximum depth less than one of the second portion of the first holes.

5. The high resistance virtual anode for the electroplating cell of claim 1 , wherein one of the first portion of the first holes has a diameter greater than a diameter of one of the second portion of the first holes.

6. The high resistance virtual anode for the electroplating cell of claim 1 , wherein the rotatable central portion has an opening ratio higher than an opening ratio of the rotatable peripheral portion.

7. The high resistance virtual anode for the electroplating cell of claim 1 , wherein each of the first holes has a substantially or entirely same diameter.

8. The high resistance virtual anode for the electroplating cell of claim 1 , wherein a center of one of the first layer or the second layer has a thickness less than a thickness of a periphery of the one of the first layer or the second layer.

9. The high resistance virtual anode for the electroplating cell of claim 1 , wherein a thickness of one of the first layer or the second layer is gradually increased from a center to a periphery.

10. An electroplating cell for treating a surface of a substrate, comprising:

a substrate holder for holding the substrate;

a plating bath;

an anode in the plating bath; and

a high resistance virtual anode between the surface of the substrate and the anode, the high resistance virtual anode comprising:

a first layer comprising a plurality of first holes through the first layer; and

a second layer over the first layer and comprising a plurality of second holes through the second layer, wherein the first layer comprises a rotatable central portion and a rotatable peripheral portion surrounding the rotatable central portion.

11. The electroplating cell for treating the surface of the substrate of claim 10 , wherein the first layer faces the anode, and the second layer faces the surface of the substrate.

12. The electroplating cell for treating the surface of the substrate of claim 11 , wherein the first layer has a planar surface and an arc surface opposite to each other, and the arc surface of the first layer faces the anode.

13. The electroplating cell for treating the surface of the substrate of claim 12 , wherein the planar surface of the first layer faces the second layer.

14. The electroplating cell for treating the surface of the substrate of claim 10 , wherein a center of the high resistance virtual anode has a thickness less than a thickness of a periphery of the high resistance virtual anode.

15. The electroplating cell for treating the surface of the substrate of claim 10 , wherein the rotatable peripheral portion comprises a plurality of rotatable ring-shaped portions coaxially surrounding the rotatable central portion.

16. The electroplating cell for treating the surface of the substrate of claim 10 , wherein:

the first layer is between the second layer and the anode, and

a thickness of the first layer is gradually increased from a center to a periphery.

17. A high resistance virtual anode for an electroplating cell, comprising:

a first layer comprising a plurality of first holes through the first layer; and

a second layer over the first layer and comprising a plurality of second holes through the second layer, wherein a thickness of the second layer is non-uniform, and the first layer comprises a rotatable central portion and a rotatable peripheral portion surrounding the rotatable central portion.

18. The high resistance virtual anode for the electroplating cell of claim 17 , wherein a first hole of the plurality of first holes has a diameter greater than a diameter of a second hole of the plurality of first holes.

19. The high resistance virtual anode for the electroplating cell of claim 17 , wherein:

the second layer comprises a first portion, a second portion, and a third portion,

a thickness of the first portion is uniform,

a thickness of the second portion is non-uniform,

a thickness of the third portion is uniform, and

the second portion is between the first portion and the third portion.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 18, 2016
From: WANG, PO-WEI; CHANG, CHUN-LIN
To: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Reel/Frame 038639/0390 →
Continuity (2)
Provisional Application 62261209 · Nov 30, 2015
Related Publication 20170152607A1 · Jun 1, 2017