Liquid crystal display device
A first semiconductor layer is formed in the shape of an island in an active area displaying images on an array substrate. A second semiconductor layer is formed in the shape of an island outside the active area. A first insulating film covers the first and second semiconductor layers. A gate line is formed on the first insulating film and extends in a first direction. The gate line includes a gate electrode crossing the first semiconductor layer and a crossing portion crossing the second semiconductor layer. A second insulating film covers the gate line. A source line is formed on the second insulating film and extends in a second direction. The source line includes a source electrode contacting with the first semiconductor layer. A drain electrode is formed on the second insulating film apart from the source line and contacting with the first semiconductor layer.
1. A display device comprising:
an insulating substrate;
a first semiconductor layer located in an active area on the insulating substrate;
a second semiconductor layer located in a non-display area outside the active area on the insulating substrate;
a first insulating film covering the first and second semiconductor layers;
a gate line formed on the first insulating film and overlapping with the first and second semiconductor layers;
a second insulating film covering the gate line; and
a source line formed on the second insulating film and connected with the first semiconductor layer,
wherein the source line is connected with the first semiconductor layer through a first contact hole formed in the first and second insulating films, and
the second semiconductor layer is in a floating state.
2. The display device according to claim 1 , wherein the second semiconductor layer is entirely covered by the first insulating film, and is not connected to a conductive layer located above the first insulating film.
3. The display device according to claim 1 , wherein the first and second semiconductor layers are formed of poly-silicon.
4. The display device according to claim 1 , further comprising:
a drain electrode formed on the second insulating film;
a third insulating film covering the source line;
a common electrode formed on the third insulating film;
a fourth insulating film covering the common electrode; and
a pixel electrode formed on the fourth insulating film,
wherein the pixel electrode is connected with the drain electrode through a second contact hole formed in the third and fourth insulating films, and
the drain electrode is connected with the first semiconductor layer through a third contact hole formed in the first and second insulating films.
5. The display device according to claim 1 , further comprising:
a first alignment film covering the pixel electrode;
a second alignment film facing the first alignment film; and
a liquid crystal layer held between the first and second alignment films.
6. The display device according to claim 1 , further comprising a gate drive circuit located in the non-display area,
wherein the second semiconductor layer is located between the gate drive circuit and the first semiconductor layer.
7. The display device according to claim 1 , wherein the second semiconductor layer comprises a first portion overlapping with the gate line and extending in a second direction, which is an extending direction of the source line, and a second portion not overlapping with the gate line and extending in a first direction, which is an extending direction of the gate line.
8. The display device according to claim 7 , wherein the second semiconductor layer further comprises a third portion extending in the second direction,
one end of the second portion is connected with the first portion, and
another end of the second portion is connected with the third portion.
9. The display device according to claim 8 , wherein a length of the first portion in the second direction differs from a length of the third portion in the second direction.
10. The display device according to claim 8 , wherein the third portion overlaps with the gate line, and
the second semiconductor layer crosses the gate line at two portions.
11. The display device according to claim 8 , further comprising:
a gate drive circuit located in the non-display area; and
a metallic line located between the gate line and the gate drive circuit and formed on the second insulating film,
wherein the metallic line overlaps with the third portion.
12. The display device according to claim 11 , wherein the metallic line connects the gate line and the gate drive circuit.
13. The display device according to claim 12 , wherein the metallic line is formed of a same material as the source line.
14. The display device according to claim 1 , wherein an area of the first semiconductor layer differs from an area of the second semiconductor layer.
15. The display device according to claim 1 , wherein a shape of the first semiconductor layer differs from a shape of the second semiconductor layer.