Coating compositions for use with an overcoated photoresist
Organic coating compositions, particularly antireflective coating compositions for use with an overcoated photoresist, are provided that comprise that comprise a thermal acid generator that comprises: i) a pyridinium component having one or more ring substituents selected from optionally substituted alkyl and optionally substituted heteroalkyl; and ii) a sulfonic acid component.
1. A coated substrate comprising:
a substrate having thereon:
a) a composition comprising:
1) a resin; and
2) an ionic thermal acid generator that comprises:
i) a pyridinium component having one or more ring substituents selected from optionally substituted alkyl and optionally substituted heteroalkyl; and
ii) a sulfonic acid component;
b) a layer of a photoresist composition above the a) composition.
2. The coated substrate of claim 1 , wherein the a) composition does not contain a photoacid generator.
3. The coated substrate of claim 1 , wherein the a) composition further comprises a crosslinker component.
4. The coated substrate of claim 1 , wherein the resin comprises one or more cyanurate groups and polyester linkages.
5. The coated substrate of claim 1 , wherein the thermal acid generator has a structure of the following Formula (I):
wherein R 1 is a non-hydrogen substituent;
each R 2 is independently a non-hydrogen substituent;
and n is 0, 1, 2, 3, 4 or 5.
6. The coated substrate of claim 1 , wherein the sulfonic acid component is an optionally substituted aryl sulfonic acid.
7. The coated substrate of claim 1 , wherein the ring nitrogen of the pyridinium component is not substituted.
8. The coated substrate of claim 1 , wherein the composition further comprises a solvent component that comprises 2-hydroxyisobutyric acid methyl ester, propylene glycol methyl ether and/or ethyl lactate.
9. The coated substrate of claim 1 , wherein the thermal acid generator comprises a pyridinium component of one of the following structures:
10. A method for forming photoresist relief image, the method comprising:
a) providing the coated substrate of claim 1 ;
b) imaging the layer of the photoresist composition with patterned activating radiation; and
c) developing the imaged layer of the photoresist composition to provide a photoresist relief image.
11. The method of claim 10 , wherein the a) composition does not contain a photoacid generator.
12. The method of claim 10 , wherein the resin comprises one or more cyanurate groups and polyester linkages.
13. The method of claim 10 , wherein the thermal acid generator has a structure of the following Formula (I):
wherein R 1 is a non-hydrogen substituent;
each R 2 is independently a non-hydrogen substituent;
and n is 0, 1, 2, 3, 4 or 5.
14. The method of claim 10 , wherein the sulfonic acid component is an optionally substituted aryl sulfonic acid.
15. The method of claim 10 , wherein the ring nitrogen of the pyridinium component is not substituted.
16. The method of claim 10 , wherein the composition further comprises a solvent component that comprises 2-hydroxyisobutyric acid methyl ester, propylene glycol methyl ether and/or ethyl lactate.
17. The method of claim 10 , wherein the thermal acid generator comprises a pyridinium component of one of the following structures: