Semiconductor device
In a plan view of a semiconductor substrate, the semiconductor substrate includes a pillar exposing area in which the pillar region is exposed on the front surface of the semiconductor substrate, a pillar contacting area in which the pillar region is in contact with a deeper side of the anode contact region, and an anode contacting area in which the anode region is in contact with the deeper side of the anode contact region. In a direction along which the pillar contacting area and the anode contacting area are aligned, a width of the pillar contacting area is smaller than a width of the anode contacting area.
1. A semiconductor device comprising:
a semiconductor substrate including an IGBT region and a diode region; and
a front surface electrode provided on a front surface of the semiconductor substrate,
wherein the IGBT region comprises:
an n-type drift region;
an n-type barrier region provided on a front surface side of the drift region;
a p-type body region provided on a front surface side of the barrier region;
an n-type emitter region provided on a front surface side of the body region and configured to electrically connect to the front surface electrode;
a p-type body contact region provided on the front surface side of the body region at a position different from a position of the emitter region, the p-type body contact region having an impurity concentration higher than an impurity concentration of the body region, and configured to electrically connect to the front surface electrode;
a plurality of gate trenches extending from the front surface of the semiconductor substrate, piercing the emitter region, the body region and the bather region and reaching the drift region; and
an n-type pillar region extending from the front surface of the semiconductor substrate between adjacent gate trenches, piercing the body region and reaching the barrier region, and configured to electrically connect to the front surface electrode and the barrier region;
wherein the diode region comprises:
an n-type drift region;
an n-type barrier region provided on a front surface side of the drift region;
a p-type anode region provided on a front surface side of the barrier region;
a p-type anode contact region provided on at least a part of a front surface side of the anode region, the p-type anode contact region having the impurity concentration higher than an impurity concentration of the anode region, and configured to electrically connect to the front surface electrode;
a plurality of gate trenches extending from the front surface of the semiconductor substrate, piercing at least the anode region and the barrier region and reaching the drift region; and
an n-type pillar region extending from the front surface of the semiconductor substrate between adjacent gate trenches, piercing the anode contact region and the anode region and reaching the barrier region, and configured to electrically connect to the front surface electrode and the barrier region;
wherein in a plan view of the semiconductor substrate, the semiconductor substrate includes a pillar exposing area in which the pillar region is exposed on the front surface of the semiconductor substrate, a pillar contacting area in which the pillar region is in contact with a deeper side of the anode contact region, and an anode contacting area in which the anode region is in contact with the deeper side of the anode contact region, and
wherein in a direction along which the pillar contacting area and the anode contacting area are aligned, a width of the pillar contacting area is smaller than a width of the anode contacting area.
2. The semiconductor device according to claim 1 , wherein
a width of the pillar contacting area is reduced from the front surface of the semiconductor substrate toward a deeper side along a depth direction of the semiconductor substrate, and
the width of a lower end of the pillar contacting area is greater width of an upper end of the pillar contacting area.
3. The semiconductor device according to claim 1 , wherein
the impurity concentration of the anode contact region is gradually reduced from the front surface of the semiconductor substrate toward a deeper side along a depth direction of the semiconductor substrate, and
the impurity concentration of a lower end of the anode contact region is higher than half the impurity concentration of an upper end of the anode contact region.
4. The semiconductor device according to claim 1 , wherein
the pillar region comprises a reduced concentration area, and
the impurity concentration of the reduced concentration area is gradually reduced from the front surface of the semiconductor substrate toward a deeper side along a depth direction of the semiconductor substrate.
5. The semiconductor device according to claim 1 , wherein
a plurality of pillar regions is provided in the diode region, and
among the plurality of pillar regions in the diode region, a pillar region located closest to the IGBT region has the pillar contacting all a smaller width than those of the other pillar regions.