Heat-assisted magnetic recording (HAMR) disk with multiple continuous magnetic recording layers
A heat-assisted magnetic recording (HAMR) disk has multiple independent data layers, each data layer being a continuous non-patterned layer of magnetizable material. Each data layer can store data independent and not related to the data stored in the other data layers. The data layers are separated by a nonmagnetic spacer layer (SL) and each data layer is formed of high-anisotropy (K u ) material so that the coercivities of lower and upper data layers (RL1 and RL2) are greater than the magnetic write field. At a high laser power both RL1 and RL2 are heated to above their respective Curie temperatures and data is recorded in both RL1 and RL2. At low laser power only upper RL2 is heated to above its Curie temperature and data is recorded only in RL2. The SL prevents lower RL1 from being heated to above its Curie temperature at low laser power.
1. A perpendicular heat-assisted magnetic recording (HAMR) medium comprising:
a substrate;
a first continuous non-patterned magnetic layer comprising a substantially chemically-ordered alloy comprising Pt and one of Fe and Co on the substrate and having a plurality of regions magnetized perpendicularly to the plane of the first magnetic layer;
a nonmagnetic spacer layer on the first magnetic layer; and
a second continuous non-patterned magnetic layer comprising a substantially chemically-ordered alloy comprising Pt and one of Fe and Co on the spacer layer and having a plurality of regions magnetized perpendicularly to the plane of the second magnetic layer, wherein the magnetized regions of the second magnetic layer are not aligned with the magnetized regions of the first magnetic layer.
2. The medium of claim 1 wherein the material of the first magnetic layer has substantially the same coercivity (H C ) as the material of the second magnetic layer.
3. The medium of claim 1 wherein the material of the first magnetic layer has a Curie temperature (T C1 ) substantially equal to the Curie temperature (T C2 ) of the material of the second magnetic layer.
4. The medium of claim 1 wherein the material of the first magnetic layer has a Curie temperature (T C1 ) greater than the Curie temperature (T C2 ) of the material of the second magnetic layer.
5. The medium of claim 1 wherein the material of the first magnetic layer has a Curie temperature (T C1 ) less than the Curie temperature (T C2 ) of the material of the second magnetic layer.
6. The medium of claim 1 wherein at least one of the first and second magnetic layers further comprises a segregant selected from one or more of C, SiO 2 , TiO 2 , Y 2 O 3 , TaOx, ZrO 2 , VO x , SiC, SiN, HfC, HfO 2 , VN, AlN, MoO x , TiC, TiN, B, B 4 C, and BN.
7. The medium of claim 1 wherein at least one of the first and second magnetic layers is formed of a material based on the L1 0 phase and having a composition of (Fe (y) Pt (100−y) )—X, where y is greater than or equal to 40 atomic percent and less than or equal to 60 atomic percent and the element X is selected from one or more of Ni, Au, Cu, Ge, Pd, Mn and Ag.
8. The medium of claim 1 wherein the alloy of at least one of the first and second magnetic layers has a composition of the form (Fe (1−x) Z x ) y Pt (100−y) , where Z is selected from Cu, Ni, Cr, Mn, B and Ag, x is greater than or equal to 1 atomic percent and less than or equal to 20 atomic percent and y is greater than or equal to 45 atomic percent and less than or equal to 55 atomic percent.
9. The medium of claim 8 wherein the alloy of the second magnetic layer comprises a FeCuPt alloy.
10. The medium of claim 8 wherein the alloy of each of the first and second magnetic layers comprises a FeCuPt alloy wherein the amount of Cu in the second magnetic layer is greater than the amount of Cu in the first magnetic layer.
11. The medium of claim 1 wherein the nonmagnetic spacer layer is selected from magnesium oxide (MgO), magnesium titanate (Mg 2 TiO 4 ), spinel (Mg 2 Al 3 O 4 ), barium zirconium oxide (BaZrO 3 ), barium cerium oxide (BaCeO 3 ), strontium titanate (SrTiO 3 ), strontium zirconium oxide (SrZrO 3 ), lanthanum aluminum oxide (LaAlO 3 ), titanium nitride (TiN), titanium oxynitride (TiO x N (1−x) ), silicon nitride (SiN) and carbon (C).
12. The medium of claim 1 wherein the nonmagnetic spacer layer is selected from Cr, W, Mo, Mn, V, Nb, Ru, Rh, Ir and alloys thereof.
13. A perpendicular heat-assisted magnetic recording (HAMR) disk comprising:
a substrate;
a first continuous non-patterned magnetic layer on the substrate and comprising a substantially chemically-ordered alloy comprising Fe and Pt and a segregant selected from one or more of C, SiO 2 , TiO 2 , Y 2 O 3 , TaOx, ZrO 2 , VO x , SiC, SiN, HfC, HfO 2 , VN, AlN, MoO x , TiC, TiN, B, B 4 C, and BN, the first magnetic layer having a plurality of regions magnetized perpendicularly to the plane of the first magnetic layer and a coercivity (H C1 );
a nonmagnetic spacer layer on the first magnetic layer; and
a second continuous non-patterned magnetic layer on the spacer layer and comprising a substantially chemically-ordered alloy comprising Fe and Pt and a segregant selected from one or more of C, SiO 2 , TiO 2 , Y 2 O 3 , TaOx, ZrO 2 , VO x , SiC, SiN, HfC, HfO 2 , VN, AlN, MoO x , TiC, TiN, B, B 4 C, and BN, the second magnetic layer having a plurality of regions magnetized perpendicularly to the plane of the second magnetic layer and a coercivity (H C2 ) and wherein the magnetized regions of the second magnetic layer are not aligned with the magnetized regions of the first magnetic layer.
14. The disk of claim 13 wherein the first magnetic layer has a Curie temperature (T C1 ) substantially equal to the Curie temperature (T C2 ) of the second magnetic layer.
15. A perpendicular heat-assisted magnetic recording (HAMR) disk comprising:
a substrate;
a first continuous non-patterned magnetic layer on the substrate and comprising a substantially chemically-ordered alloy comprising Fe and Pt and a segregant selected from one or more of C, SiO 2 , TiO 2 , Y 2 O 3 , TaOx, ZrO 2 , VO x , SiC, SiN, HfC, HfO 2 , VN, AlN, MoO x , TiC, TiN, B, B 4 C, and BN, the first magnetic layer having a plurality of regions magnetized perpendicularly to the plane of the first magnetic layer and a coercivity (H C1 );
a nonmagnetic spacer layer on the first magnetic layer; and
a second continuous non-patterned magnetic layer on the spacer layer and comprising a material having a composition of the form (Fe (1−x) Z x ) y Pt (100−y) , where Z is selected from Cu, Ni, Cr, Mn, B and Ag, x is greater than or equal to 1 atomic percent and less than or equal to 20 atomic percent and y is greater than or equal to 45 atomic percent and less than or equal to 55 atomic percent, the second magnetic layer having a plurality of regions magnetized perpendicularly to the plane of the second magnetic layer and a coercivity (H C2 ) wherein the magnetized regions of the second magnetic layer are not aligned with the magnetized regions of the first magnetic layer and wherein H C1 is greater than H C2 .
16. The disk of claim 15 wherein the first magnetic layer has a Curie temperature (T C1 ) greater than the Curie temperature (T C2 ) of the second magnetic layer.
17. The disk of claim 15 wherein the material of the second magnetic layer comprises a FeCuPt alloy.
18. The disk of claim 15 wherein the nonmagnetic spacer layer is selected from magnesium oxide (MgO), magnesium titanate (Mg 2 TiO 4 ), spinel (Mg 2 Al 3 O 4 ), barium zirconium oxide (BaZrO 3 ), barium cerium oxide (BaCeO 3 ), strontium titanate (SrTiO 3 ), strontium zirconium oxide (SrZrO 3 ), lanthanum aluminum oxide (LaAlO 3 ), titanium nitride (TiN), titanium oxynitride (TiO x N (1−x) ), silicon nitride (SiN) and carbon (C).
19. The disk of claim 15 wherein the nonmagnetic spacer layer is selected from Cr, W, Mo, Mn, V, Nb, Ru, Rh, Ir and alloys thereof.
20. The disk of claim 15 wherein the second magnetic layer further comprises a segregant selected from one or more of C, SiO 2 , TiO 2 , Y 2 O 3 , TaOx, ZrO 2 , VO x , SiC, SiN, HfC, HfO 2 , VN, AlN, MoO x , TiC, TiN, B, B 4 C, and BN.