IP Library Granted Patent US 9,831,392
Granted Patent B2
US 9,831,392 · App. 15/171,051 · Granted Nov 28, 2017

Cover glass for light emitting diode package, sealed structure, and light emitting device

Inventors: Makoto Shiratori (Haibara-gun, JP); Yoko Mitsui (Chiyoda-ku, JP); Satoshi Takeda (Chiyoda-ku, JP)
Assignee: Asahi Glass Company, Limited
H01L33/483C03C3/091C03C3/093C03C3/11C03C8/24H01L33/32H01L33/507H01L33/56H01L2924/16195H01L2933/0033
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Quick Facts
Patent No.
US 9,831,392
App. No.
15/171,051
Granted
Nov 28, 2017
Kind
B2
Abstract

To provide a cover glass for light emitting diode package, which is capable of preventing deterioration in transmittance characteristics during use for a long period of time, and a light emitting device. The cover glass for light emitting diode package has a basic composition comprising, by mass % as calculated as oxides, from 55 to 80% of SiO 2 , from 0.5 to 15% of Al 2 O 3 , from 5 to 25% of B 2 O 3 , from 0 to 7% of Li 2 O, from 0 to 15% of Na 2 O, from 0 to 10% of K 2 O (provided Li 2 O+Na 2 O+K 2 O=from 2 to 20%), from 0 to 0.1% of SnO 2 and from 0.001 to 0.1% of Fe 2 O 3 , it does not substantially contain As 2 O 3 , Sb 2 O 3 and PbO, and it has an average thermal expansion coefficient of from 45 to 70×10 −7 /° C. in a temperature range of from 0 to 300° C.

Claims (34)

1. A cover glass, consisting essentially of, by mass % as calculated as oxides:

from 55 to 80% of SiO 2 ;

from 0.5 to 15% of Al 2 O 3 ;

from 5 to 25% of B 2 O 3 ;

from 0 to 7% of Li 2 O;

from 0 to 15% of Na 2 O;

from 0 to 10% of K 2 O, with the proviso that Li 2 O+Na 2 O+K 2 O=from 2 to 20%;

from 0 to 2% TiO 2 ;

from 0 to 0.1% of SnO 2 ; and

from 0.001 to 0.1% of Fe 2 O 3 ,

wherein the cover glass has an average thermal expansion coefficient of from 45 to 70><10 −7 /° C. in a temperature range of from 0 to 300° C.

2. The cover glass according to claim 1 , consisting essentially of, by mass % as calculated as oxides:

from 55 to 80% of SiO 2 ,

from 0.5 to 15% of Al 2 O 3 ,

from 5 to 25% of B 2 O 3 ,

from 0 to 7% of Li 2 O,

from 0 to 15% of Na 2 O,

from 0 to 10% of K 2 O, with the proviso that Li 2 O+Na 2 O+K 2 O=from 2 to 20%;

from 0 to 2% TiO 2 ;

from 0 to 0.1% of SnO 2 ; and

from 0.003 to 0.1% of Fe 2 O 3 ,

wherein the cover glass has an average thermal expansion coefficient of from 45 to 70×10 −7 /° C. in a temperature range of from 0 to 300° C.

3. The cover glass according to claim 1 , wherein the transmittance at a wavelength of 365 nm in a thickness of 1 mm is at least 85%.

4. The cover glass according to claim 1 , wherein the average transmittance at a wavelength of from 808 to 1,064 nm in a thickness of 1 mm is at least 85%.

5. The cover glass according to claim 1 , wherein the refractive index (nd) is at most 1.52.

6. A sealed structure having a cover glass and a light emitting diode package bonded to each other, wherein a light emitting diode package and the cover glass according to claim 1 are bonded.

7. A sealed structure having a cover glass and a light emitting diode package bonded to each other, wherein the light emitting diode package comprises a glass ceramic substrate obtained by firing a glass ceramic composition comprising a glass powder and a ceramic filler, and the glass ceramic substrate and the cover glass according to claim 1 are bonded.

8. The sealed structure according to claim 6 , wherein the cover glass is bonded to the light emitting diode package via a low melting point glass which is melted by laser irradiation.

9. A light emitting device, comprising a cover glass according to claim 1 , a light emitting diode package having a light emitting diode mounted thereon, and a sealing material comprising a low melting point glass which is melted by laser irradiation to bond the cover glass and the light emitting diode package.

10. The light emitting device according to claim 9 , wherein the sealing material comprises the low melting point glass and an inorganic filler.

11. The light emitting device according to claim 10 , wherein the inorganic filler is at least one member selected from the group consisting of a low-expansion filler and an electromagnetic wave absorbing material.

12. The light emitting device according to claim 9 , wherein the difference in average thermal expansion coefficient in a temperature range of from 25 to 300° C. between the light emitting diode package and the cover glass is at most 20×10 −7 /° C.

13. The light emitting device according to claim 9 , wherein the light emitting diode package comprises a glass ceramic substrate obtained by firing a glass ceramic composition comprising a glass powder and a ceramic filler, and between the average thermal expansion coefficient in a temperature range of from 25 to 300° C. of the glass ceramic substrate and the average thermal expansion coefficient in a temperature range of from 25 to 300° C. of the cover glass, there is a relation of “the average thermal expansion coefficient of the glass ceramic substrate”≧“the average thermal expansion coefficient of the cover glass”.

14. The cover glass according to claim 1 , wherein the amount of SnO 2 is from 0 to 0.002%.

Assignments (2)
CHANGE OF NAME Recorded Aug 7, 2018
From: ASAHI GLASS COMPANY, LIMITED
To: AGC INC.
Reel/Frame 046730/0786 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 2, 2016
From: SHIRATORI, MAKOTO; MITSUI, YOKO; TAKEDA, SATOSHI
To: ASAHI GLASS COMPANY, LIMITED
Reel/Frame 038774/0949 →
Priority Claims (1)
JP 2013-256170 · Dec 11, 2013 · national
Continuity (2)
Continuation PCTJP2014082305 · Dec 5, 2014
Related Publication 20160276544A1 · Sep 22, 2016