Discrete dynode electron multiplier fabrication method

1. A process of manufacturing a discrete-dynode electron multiplier (DDEM) comprising the steps of:

(a) mounting a first insulator block to a first monolithic conductor block to form a first dynode array;

(b) forming a series of slots in the first insulator block;

(c) forming a series of ion-optics geometrical structures in the first monolithic conductor block, each ion-optics geometrical structure of the first monolithic conductor block having a smallest dimension of less than 1 millimeter and corresponding in position to one slot of the series of slots in the first insulator block;

(d) mounting a second insulator block to a second monolithic conductor block to form a second dynode array;

(e) forming a series of slots in the second insulator block;

(f) forming a series of ion-optics geometrical structures in the second monolithic conductor block, each ion-optics geometrical structure of the second monolithic conductor block having a smallest dimension of less than 1 millimeter and corresponding in position to one slot of the series of slots in the second insulator block; and

(g) mounting the first dynode array to the second dynode array to form the DDEM, such that the ion-optics geometrical structures of the dynode arrays face each other and are spaced apart by a pre-determined distance to form an input end of the DDEM, an output end of the DDEM, and an ion path between the input end and the output end.

2. The process of claim 1 , wherein the forming steps are performed by electrical discharge machining (EDM), laser cutting, and/or water jet cutting.

3. The process of claim 1 , wherein each series of ion-optics geometrical structures comprises a series of alternating fingers and slots.

4. The process of claim 3 , wherein one of the fingers and/or slots is curved in a direction along the smallest dimension.

5. The process of claim 1 , wherein the mounting step (a) comprises either bonding or brazing the first conductor block to the first insulator block.

6. The process of claim 1 , wherein the step (c) of forming further comprises the step of forming an opening in the first conductor block.

7. The process of claim 6 further comprising mounting a circuit board to the DDEM by positioning a fastener through the opening in the first conductor block and through an opening in the circuit board.

8. The process of claim 1 , the method further comprises the step of applying a secondary electron emissive layer to exposed surfaces of the conductor blocks.

9. The process of claim 1 , wherein each ion-optics geometrical structure of the first monolithic conductor block corresponds in position to one slot of the series of slots in the first insulator block.

10. The process of claim 1 , wherein each slot extends only partially through a thickness dimension of the respective insulator block.