IP Library Granted Patent US 10,031,544
Granted Patent B2
US 10,031,544 · App. 15/172,932 · Granted Jul 24, 2018

Power supply voltage detection circuit, semiconductor integrated circuit device, and electronic device

Inventor: Sachiyuki Abe (Hara-mura, JP)
Assignee: SEIKO EPSON CORPORATION
G05F3/02H03K5/24H01L27/0285
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Quick Facts
Patent No.
US 10,031,544
App. No.
15/172,932
Granted
Jul 24, 2018
Kind
B2
Abstract

A power supply voltage detection circuit can detect the power supply voltage obtained by stabilizing a power supply voltage supplied from outside and also the magnitude of the power supply voltage before being stabilized. This power supply voltage detection circuit includes a selection circuit that selects one power supply potential from among a plurality of power supply potentials including a first power supply potential supplied from outside and a second power supply potential obtained by stabilizing the first power supply potential, a variable voltage dividing circuit that divides the voltage between the power supply potential selected by the selection circuit and a reference potential by a set division ratio, a comparison voltage generation circuit that generates a comparison voltage based on a reference voltage, and a comparator that compares the voltage divided by the variable voltage dividing circuit with the comparison voltage and outputs a signal representing a comparison result.

Claims (35)

1. A power supply voltage detection circuit comprising:

a selection circuit that selects one power supply potential from among a plurality of power supply potentials including a first power supply potential supplied from outside and a second power supply potential obtained by stabilizing the first power supply potential;

a variable voltage dividing circuit that divides a voltage between the power supply potential selected by the selection circuit and a reference potential by a set division ratio that is selected to correspond to the selected power supply potential;

a comparison voltage generation circuit that generates a comparison voltage based on the reference voltage; and

a comparator that outputs a signal representing a comparison result, by comparing the voltage divided by the variable voltage dividing circuit with the comparison voltage.

2. The power supply voltage detection circuit according to claim 1 ,

wherein the selection circuit includes:

a first P-channel MOS transistor provided on a first N-well electrically connected to a first node to which the first power supply potential is supplied, and connected between the first node and a second node;

a second P-channel MOS transistor provided on a second N-well electrically connected to a third node, and connected between the second node and the third node;

a third P-channel MOS transistor provided on a third N-well electrically connected to a fourth node to which the second power supply potential is supplied, and connected between the fourth node and a fifth node; and

a fourth P-channel MOS transistor provided on the second N-well or a fourth N-well electrically connected to the third node, and connected between the fifth node and the third node, and

the selection circuit selects one power supply potential from the first and second power supply potentials, and supplies the selected power supply potential to the third node as a third power supply potential.

3. The power supply voltage detection circuit according to claim 2 , further comprising:

a control signal generation circuit that operates in accordance with a selection signal representing which power supply potential to select from among the plurality of power supply potential, and applies, to a gate of the first P-channel MOS transistor, a control signal that is at a low level when selecting the first power supply potential and that is at the first power supply potential when not selecting the first power supply potential, applies, to a gate of the second P-channel MOS transistor, a control signal that is at a low level when selecting the first power supply potential and that is at the third power supply potential when not selecting the first power supply potential, applies, to a gate of the third P-channel MOS transistor, a control signal that is at a low level when selecting the second power supply potential and that is at the second power supply potential when not selecting the second power supply potential, and applies, to a gate of the fourth P-channel MOS transistor, a control signal that is at a low level when selecting the second power supply potential and that is at the third power supply potential when not selecting the second power supply potential.

4. The power supply voltage detection circuit according to claim 1 ,

wherein the comparator has:

a first input terminal to which the comparison voltage is input; and

a second input terminal to which the voltage divided by the variable voltage dividing circuit is input, and

the variable voltage dividing circuit includes:

a first resistor connected between wiring of the reference potential and the second input terminal of the comparator;

a plurality of resistors connected in series to the second input terminal of the comparator; and

a plurality of switch circuits that apply the power supply potential selected by the selection circuit to one terminal of one resistor among the plurality of resistors, in accordance with a setting signal representing which division ratio to set among a plurality of division ratios.

5. A semiconductor integrated circuit device comprising:

a regulator that outputs a second power supply potential by stabilizing a first power supply potential supplied from outside; and

power supply voltage detection circuit according to claim 1 .

6. A semiconductor integrated circuit device comprising:

a regulator that outputs a second power supply potential by stabilizing a first power supply potential supplied from outside; and

power supply voltage detection circuit according to claim 2 .

7. A semiconductor integrated circuit device comprising:

a regulator that outputs a second power supply potential by stabilizing a first power supply potential supplied from outside; and

power supply voltage detection circuit according to claim 3 .

8. A semiconductor integrated circuit device comprising:

a regulator that outputs a second power supply potential by stabilizing a first power supply potential supplied from outside; and

power supply voltage detection circuit according to claim 4 .

9. An electronic device comprising the semiconductor integrated circuit device according to claim 5 .

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 1, 2024
From: SEIKO EPSON CORPORATION
To: CRYSTAL LEAP ZRT
Reel/Frame 066162/0434 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 3, 2016
From: ABE, SACHIYUKI
To: SEIKO EPSON CORPORATION
Reel/Frame 038801/0776 →
Priority Claims (1)
JP 2015-125406 · Jun 23, 2015 · national
Continuity (1)
Related Publication 20160378129A1 · Dec 29, 2016