Solid state drive with improved power efficiency

1. A solid state drive (SSD) comprising:

one or more non-volatile memory devices configured to operate according to a programming voltage for a program function or an erase function and to a supply voltage for a read function;

a voltage regulator, external of the one or more non-volatile memory devices, having an output connected to the one or more non-volatile memory devices to supply the programming voltage and an input connected to receive a first voltage, the voltage regulator configured to convert the first voltage to the programming voltage during a normal operation of the SSD;

a discrete capacitor connected to supply the first voltage to the voltage regulator during the normal operation of the SSD; and

an energy management device connected to the discrete capacitor and configured to charge the discrete capacitor during the normal operation of the SSD,

wherein,

during the normal operation of the SSD, of the energy management device and the discrete capacitor, the voltage regulator is configured to receive the first voltage from only the discrete capacitor, and

the one or more non-volatile memory devices operate according to the programming voltage supplied by the output of the voltage regulator (i) during both the normal operation of the SSD and in the event of a power loss or failure of the SSD, and (ii) during normal operation for the program function or the erase function.

2. The SSD of claim 1 , further comprising:

a second voltage regulator, external of the one or more non-volatile memory devices, having an output connected to the one or more non-volatile memory devices to supply the supply voltage and an input connected to receive a second voltage, the second voltage regulator configured to convert the second voltage to the supply voltage,

wherein

the discrete capacitor is connected to supply the first voltage to the energy management device,

the energy management device is connected to supply the second voltage to the second voltage regulator, and

the energy management device is configured to convert a third voltage to the second voltage during the normal operation of the SSD and to convert the first voltage to the second voltage in the event of the power loss or failure of the SSD.

3. The SSD of claim 2 , wherein at least one of the voltage regulator and the second voltage regulator are a part of the energy management device.

4. The SSD of claim 2 , wherein the one or more non-volatile memory devices comprise a third voltage regulator having an input connected to receive the supply voltage and configured to convert the supply voltage to the programming voltage.

5. The SSD of claim 4 , wherein the one or more non-volatile memory devices operate according to the programming voltage supplied by the third voltage regulator at a predetermined time after the event of the power loss or failure of the SSD occurs.

6. The SSD of claim 4 , wherein the one or more non-volatile memory devices operate according to the programming voltage supplied by the third voltage regulator after the first voltage falls below a predetermined threshold voltage, or an energy of the discrete capacitor falls below a predetermined threshold energy, after the event of the power loss or failure of the SSD occurs.

7. The SSD of claim 5 , wherein the predetermined time is between 80% and 85% of a minimum hold-up time of the one or more non-volatile memory devices.

8. The SSD of claim 5 , wherein the one or more non-volatile memory devices are configured to only operate according to the programming voltage supplied by the third voltage regulator if there are pending program or erase commands at the predetermined time.

9. The SSD of claim 6 , wherein the predetermined threshold voltage is 50% or less of the first voltage of the discrete capacitor when substantially fully charged.

10. The SSD of claim 6 , wherein the predetermined threshold energy is 25% or less of an energy of the discrete capacitor when substantially fully charged.

11. The SSD of claim 6 , wherein the one or more non-volatile memory devices are configured to only operate according to the programming voltage supplied by the third voltage regulator if there are pending program or erase commands once the first voltage falls below the predetermined threshold voltage or the predetermined threshold energy.

12. The SSD of claim 1 , wherein the one or more non-volatile memory devices are NAND flash memory devices.

13. A method of powering one or more non-volatile memory devices within a solid state drive (SSD), the method comprising:

operating the one or more non-volatile memory devices according to a programming voltage for a program function or an erase function and to a supply voltage for a read function;

supplying a first voltage with a discrete capacitor;

converting the first voltage to a programming voltage;

supplying the programming voltage to the one or more non-volatile memory devices during both a normal operation of the SSD and in the event of a power loss or failure of the SSD; and

charging the discrete capacitor during the normal operation of the SSD,

wherein, during the normal operation of the SSD, supplying the first voltage with the discrete capacitor that is converted to the programming voltage supplied to the one or more non-volatile memory devices for the program function or the erase function.

14. The method of claim 13 , further comprising:

converting a second voltage to a third voltage during the normal operation of the SSD;

converting the first voltage to the third voltage in the event of the power loss or failure;

converting the third voltage to the supply voltage; and

supplying the supply voltage to the one or more non-volatile memory devices.

15. The method of claim 14 , further comprising:

converting the supply voltage supplied to the one or more non-volatile memory devices to the programming voltage at a predetermined time after the event of the power loss or failure of the SSD occurs.

16. The method of claim 14 , further comprising:

converting the supply voltage supplied to the one or more non-volatile memory devices to the programming voltage once the first voltage falls below a predetermined threshold voltage, or an energy of the discrete capacitor falls below a predetermined threshold energy, after the event of a power loss or failure of the SSD occurs.

17. The method of claim 15 , wherein the predetermined time is between 80% and 85% of a minimum hold-up time of the one or more non-volatile memory devices.

18. The method of claim 15 , wherein the supply voltage is converted to the programming voltage only if there are pending program or erase commands at the predetermined time.

19. The method of claim 16 , wherein the predetermined threshold voltage is 50% or less of the first voltage supplied by the discrete capacitor when substantially fully charged.

20. The method of claim 16 , wherein the predetermined threshold energy is 25% or less of an energy of the discrete capacitor when substantially fully charged.

21. The method of claim 16 , wherein the supply voltage is converted to the programming voltage only if there are pending program or erase commands once the first voltage falls below the predetermined threshold voltage or the predetermined threshold energy.

22. The method of claim 13 , wherein the one or more non-volatile memory devices are NAND flash memory devices.