Semiconductor light-emitting device

1. A semiconductor light-emitting device, comprising:

a P-type semiconductor cladding layer, wherein the P-type semiconductor cladding layer is doped with magnesium;

an N-type semiconductor layer;

a light-emitting layer disposed between the P-type semiconductor cladding layer and the N-type semiconductor layer;

a hole injection layer disposed between the P-type semiconductor cladding layer and the light-emitting layer, wherein the hole injection layer comprises a first super lattice structure formed by alternately stacking a plurality of magnesium nitride layers and a plurality of semiconductor material layers, a chemical formula of each of the semiconductor material layers is Al x In y Ga 1-x-y N, and 0≦x≦1, 0≦y≦1, and 0≦x+y≦1; and

an EBL disposed between the P-type semiconductor cladding layer and the light-emitting layer, wherein the hole injection layer is disposed between the EBL and the light-emitting layer, and a bandgap of the EBL is greater than a bandgap of the light-emitting layer.

2. The semiconductor light-emitting device of claim 1 , wherein a thickness ratio of the magnesium nitride layer and the semiconductor material layer is within a range of 0.1 to 1.5.

3. The semiconductor light-emitting device of claim 1 , wherein each of the semiconductor material layers is doped with a Group IV element having a concentration within a range of 10 16 cm −3 to 10 20 cm −3 .

4. The semiconductor device of claim 3 , wherein the Group IV element is carbon.

5. The semiconductor light-emitting device of claim 1 , wherein a magnesium concentration of the magnesium nitride layers is greater than a magnesium concentration of the P-type semiconductor cladding layer.

6. The semiconductor light-emitting device of claim 1 , further comprising:

a P-type waveguide layer disposed between the P-type semiconductor cladding layer and the light-emitting layer;

an N-type waveguide layer disposed between the N-type semiconductor layer and the light-emitting layer; and

an N-type semiconductor cladding layer disposed between the N-type semiconductor layer and the N-type waveguide layer, wherein the hole injection layer is disposed between the P-type waveguide layer and the light-emitting layer, or disposed between the P-type waveguide layer and the P-type semiconductor cladding layer.

7. The semiconductor light-emitting device of claim 6 , further comprising an electron blocking layer (EBL) disposed between the P-type semiconductor cladding layer and the P-type waveguide layer, wherein a bandgap of the EBL is greater than a bandgap of the light-emitting layer.

8. The semiconductor light-emitting device of claim 7 , wherein the hole injection layer is disposed between the EBL and the P-type waveguide layer.

9. The semiconductor light-emitting device of claim 7 , wherein the hole injection layer is disposed between the P-type waveguide layer and the light-emitting layer.

10. The semiconductor light-emitting device of claim 7 , wherein a material of the EBL comprises aluminum gallium indium nitride (AlGaInN).

11. The semiconductor light-emitting device of claim 6 , further comprising an EBL disposed between the P-type waveguide layer and the light-emitting layer, wherein the hole injection layer is disposed between the P-type waveguide layer and the EBL, and a bandgap of the EBL is greater than a bandgap of the light-emitting layer.

12. The semiconductor light-emitting device of claim 6 , wherein a material of the P-type waveguide layer and a material of the N-type waveguide layer comprise indium gallium nitride (InGaN).

13. The semiconductor light-emitting device of claim 6 , wherein the P-type semiconductor cladding layer or the N-type semiconductor cladding layer comprises a second super lattice structure formed by alternately stacking a plurality of AlGaInN layers and a plurality of gallium nitride layers.

14. The semiconductor light-emitting device of claim 1 , wherein a material of the EBL comprises AlGaInN.