IP Library Granted Patent US 10,519,368
Granted Patent B2
US 10,519,368 · App. 15/175,627 · Granted Dec 31, 2019

Phosphor, manufacturing method thereof, and light-emitting device using the phosphor

Inventors: Ryosuke Hiramatsu (Yokohama, JP); Jun Tamura (Yokohama, JP); Kunio Ishida (Fuchu, JP); Keiko Albessard (Yokohama, JP); Masahiro Kato (Naka, JP)
Assignees: Kabushiki Kaisha Toshiba; Toshiba Materials Co., Ltd.
C09K11/616C09K11/57C09K11/617H01L33/504H01L33/62H01L33/502H01L2224/48091H01L2224/48247H01L2224/48465H01L2224/73265H01L2924/181
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 10,519,368
App. No.
15/175,627
Granted
Dec 31, 2019
Kind
B2
Abstract

A red-light emitting phosphor is provided, having a basic composition represented by K a (Si 1-x ,Mn x )F b and also having a particular Raman spectrum, wherein the intensity ratio I 1 /I 0 , which is a ratio of (I 1 ) the peak in a Raman shift of 600±10 cm −1 assigned to Mn—F bonds in the crystal to that (I 0 ) in a Raman shift of 650±10 cm −1 assigned to Si—F bonds in the crystal, is 0.09 to 0.22. This phosphor is produced by bringing a silicon source in contact with an aqueous reaction solution containing potassium permanganate and hydrogen fluoride, wherein a molar ratio of hydrogen fluoride to potassium permanganate is 87 to 127.

Claims (120)

1. A phosphor represented by the following formula (I):

K a (Si 1-x ,Mn x )F b ;

wherein a, b and x are numbers satisfying the conditions of 1.5≤a≤2.5, 5.5≤b≤6.5, and 0<x≤0.06 respectively;

wherein the phosphor has a Raman spectrum in which an intensity ratio (I 1 /I 0 ), which is a ratio of the peak intensity (I 1 ) in a Raman shift of 600±10 cm −1 assigned to Mn—F bonds in the crystal to that (I 0 ) in a Raman shift of 650±10 cm −1 assigned to Si—F bonds in the crystal, is 0.09 to 0.17;

wherein the phosphor has an absorptivity (α) in a range of 66% to 83.9%; and

wherein the absorptivity (α) is equal to an external quantum efficiency (η) of the phosphor/an internal quantum efficiency (η′) of the phosphor, wherein the internal quantum efficiency (η′) of the phosphor is represented by formula (II) below, and wherein the external quantum efficiency (η) of the phosphor is represented by formula (III) below,

internal

quantum

efficiency

(

η

)

=

λ

·

[

P

(

λ

)

]

d

λ

λ

·

[

E

(

λ

)

-

R

(

λ

)

]

d

λ

(

II

)

external

quantum

efficiency

(

η

)

=

λ

·

[

P

(

λ

)

]

d

λ

λ

·

[

E

(

λ

)

]

d

λ

(

III

)

wherein E(λ) represents a whole spectrum of light emitted by an excitation light source onto the phosphor in terms of the number of photons,

wherein R(λ) represents a spectrum of light emitted by the excitation light source but reflected by the phosphor in terms of the number of photons, and

wherein P(λ) represents an emission spectrum of the phosphor in terms of the number of photons.

2. The phosphor according to claim 1 , having an internal quantum efficiency of 80% or more.

3. The phosphor according to claim 1 , wherein the external quantum efficiency is in a range of 61% to 73%.

4. The phosphor according to claim 1 , wherein the internal quantum efficiency of the phosphor is 85% or more.

5. The phosphor according to claim 1 , wherein the internal quantum efficiency of the phosphor is in a range of 85% to 92%.

6. A method of manufacturing a phosphor, comprising:

immersing a silicon source to react in an aqueous reaction solution containing potassium permanganate and hydrogen fluoride;

wherein a molar ratio of hydrogen fluoride to potassium permanganate in the aqueous reaction solution is 87 to 127; and

wherein a concentration of hydrogen fluoride in the aqueous reaction solution is in a range of 27 to 40 wt %.

7. A light-emitting device comprising:

a light-emitting element radiating light in the wavelength range of 440 to 470 nm; and

a phosphor layer containing the phosphor according to claim 1 .

8. The light-emitting device according to claim 7 , wherein the luminescent layer contains a phosphor having a main emission peak in a wavelength range of 520 to 570 nm.

9. The light-emitting device according to claim 7 , wherein the phosphor layer further contains a green-light emitting phosphor or a yellow-light emitting phosphor.

10. The light-emitting device according to claim 9 , wherein the green-light emitting phosphor or the yellow-light emitting phosphor is selected from the group consisting of (Sr,Ca,Ba) 2 SiO 4 :Eu, Ca 3 (Sc,Mg) 2 Si 3 O 12 :Ce, (Y,Gd) 3 (Al,Ga) 5 O 12 :Ce, (Ca,Sr,Ba)Ga 2 S 4 :Eu, (Ca,Sr,Ba)Si 2 O 2 N 2 :Eu, and (Ca,Sr)-αSiAlON.

11. The light-emitting device according to claim 7 , wherein the phosphor layer further contains an orange-light emitting phosphor or a red-light emitting phosphor.

12. The light-emitting device according to claim 11 , wherein the orange-light emitting phosphor or the red-light emitting phosphor is selected from the group consisting of (Sr,Ca,Ba) 2 SiO 4 :Eu, Li(Eu,Sm)W 2 O 8 , (La,Gd,Y) 2 O 2 S:Eu, (Ca,Sr,Ba)S:Eu, (Sr,Ba,Ca) 2 Si 5 N 8 :Eu, and (Sr,Ca)AlSiN 3 :Eu.

Assignments (4)
NUNC PRO TUNC ASSIGNMENT Recorded Feb 19, 2026
From: KABUSHIKI KAISHA TOSHIBA
To: TOSHIBA MATERIALS CO. LTD.
Reel/Frame 074940/0511 →
CHANGE OF NAME Recorded Feb 19, 2026
From: TOSHIBA MATERIALS CO. LTD.
To: NITERRA MATERIALS CO., LTD.
Reel/Frame 074941/0803 →
CHANGE OF ADDRESS Recorded Feb 19, 2026
From: KABUSHIKI KAISHA TOSHIBA
To: KABUSHIKI KAISHA TOSHIBA
Reel/Frame 074941/0846 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 8, 2016
From: HIRAMATSU, RYOSUKE; TAMURA, JUN; ISHIDA, KUNIO; ALBESSARD, KEIKO; KATO, MASAHIRO
To: KABUSHIKI KAISHA TOSHIBA; TOSHIBA MATERIALS CO., LTD.
Reel/Frame 039368/0941 →
Priority Claims (1)
JP 2013-254437 · Dec 9, 2013 · national
Continuity (2)
Continuation PCTJP2014082516 · Dec 9, 2014
Related Publication 20160340577A1 · Nov 24, 2016