SEMICONDUCTOR NANOCRYSTALS AND METHODS OF PREPARATION
Semiconductor nanocrystals and methods of making are provided.
1 - 5 . (canceled)
6 . A method for preparing a semiconductor nanocrystal including a core comprising a Group III element and a Group V element and a shell over at least a portion of the core, the method comprising: contacting an M-precursor compound with an X donor, wherein the X donor is represented by the formula (I):
X(Y(R) 3 ) 3 (I)
in a reaction mixture, where X is a group V element; Y is Ge, Sn, or Pb; and each R, independently, is alkyl, alkenyl, alkynyl, cycloalkyl, cycloalkenyl, heterocyclyl, aryl, or heteroaryl, wherein each R, independently, is optionally substituted by 1 to 6 substituents independently selected from hydrogen, halo, hydroxy, nitro, cyano, amino, alkyl, cycloalkyl, cycloalkenyl, alkoxy, acyl, thio, thioalkyl, alkenyl, alkynyl, cycloalkenyl, heterocyclyl, aryl, or heteroaryl at a first temperature to form a reaction mixture;
heating the reaction mixture at a second temperature for at least an hour, wherein the second temperature is the same as or different from the first temperature;
isolating cores from the reaction mixture after heating; and
forming at least a first shell over at least a portion of the isolated cores, the shell comprising a semiconductor material.
7 . A method in accordance with claim 6 wherein the compound of formula (I) comprises tris(trimethylgermyl)arsine.
8 . A method in accordance with claim 6 wherein M comprises a Group III element.
9 . A method in accordance with claim 6 wherein M comprises indium.
10 . A method in accordance with claim 6 wherein the semiconductor nanocrystals comprise indium arsenide.
11 . A method in accordance with claim 6 wherein the semiconductor material comprises a Group II-VI compound.
12 . A method in accordance with claim 6 wherein the semiconductor material comprises cadmium selenide.
13 . A method in accordance with claim 6 wherein the semiconductor material comprises zinc selenide.
14 . A method in accordance with claim 6 wherein the method further comprises forming a second shell over the first shell.
15 . A method in accordance with claim 14 wherein the second shell comprises a second semiconductor material.
16 . (canceled)
17 . (canceled)
18 . A method for preparing a semiconductor nanocrystal including a core comprising a Group III element and a Group V element and a shell over at least a portion of the core, the method comprising: contacting an M-precursor compound with an X donor, wherein the X donor is represented by the formula (I):
X(Y(R) 3 ) 3 (I)
in a reaction mixture, where X is a group V element; Y is Ge, Sn, or Pb; and each R, independently, is alkyl, alkenyl, alkynyl, cycloalkyl, cycloalkenyl, heterocyclyl, aryl, or heteroaryl, wherein each R, independently, is optionally substituted by 1 to 6 substituents independently selected from hydrogen, halo, hydroxy, nitro, cyano, amino, alkyl, cycloalkyl, cycloalkenyl, alkoxy, acyl, thio, thioalkyl, alkenyl, alkynyl, cycloalkenyl, heterocyclyl, aryl, or heteroaryl at a first temperature to form a reaction mixture;
heating the reaction mixture at a second temperature for at least an hour, wherein the second temperature is the same as or different from the first temperature;
and
forming at least a first shell over at least a portion of the cores in the reaction mixture, the shell comprising a semiconductor material.
19 . A method in accordance with claim 18 wherein the compound of formula (I) comprises tris(trimethylgermyl)arsine.
20 . A method in accordance with claim 18 wherein M comprises a Group III element.
21 . A method in accordance with claim 18 wherein M comprises indium.
22 . A method in accordance with claim 18 wherein the semiconductor nanocrystals comprise indium arsenide.
23 . A method in accordance with claim 18 wherein the semiconductor material comprises a Group II-VI compound.
24 . A method in accordance with claim 18 wherein the semiconductor material comprises cadmium selenide.
25 . A method in accordance with claim 18 wherein the semiconductor material comprises zinc selenide.
26 . A method in accordance with claim 18 wherein the method further comprises forming a second shell over the first shell.
27 . A method in accordance with claim 26 wherein the second shell comprises a second semiconductor material.
28 - 32 . (canceled)