Aging tolerant register file

1. An apparatus comprising:

a first supply node to provide a power supply;

a column of memory cells coupled to the first supply node;

a diode-connected device having a gate terminal connected to the first supply node, and a source terminal coupled to a second supply node; and

a stack of devices coupled to the first supply node, wherein at least one device in the stack is coupled to the second supply node, and wherein the stack of devices is controllable according to an operation mode.

2. The apparatus of claim 1 , wherein the stack of devices are to be turned on when a memory cell in the column of memory cells is being read from or written to.

3. The apparatus of claim 1 , wherein the stack of devices is to be turned off when none of the memory cells in the column of memory cells is being read from or written to.

4. The apparatus of claim 1 , wherein the stack of devices is to be turned on during a low power mode operation.

5. The apparatus of claim 1 , wherein the operation mode is one of: low power mode, high power mode, read mode, or write mode.

6. The apparatus of claim 1 , wherein the memory cells are SRAM bit-cells.

7. The apparatus of claim 1 , wherein the memory cells are part of a register file.

8. The apparatus of claim 7 , wherein the register file comprises:

a bit-line (BL) read port;

a first local bit-line (LBL) coupled to the BL read port;

a second LBL; and

a NAND or a NOR gate coupled to the first and second LBLs such that the first and second LBLs are physically disconnected from one another.

9. The apparatus of claim 8 , wherein the register file comprises a split-keeper which is operable to be turned off during precharge, the split-keeper having a first part and a second part, wherein the first part of the split-keeper is coupled to the first LBL and the second part of the split-keeper is coupled to the second LBL.

10. The apparatus of claim 9 , wherein the register file comprises a first NAND gate which is controllable by a first pre-charge node, and coupled to the first LBL.

11. The apparatus of claim 10 , wherein the register file comprises a second NAND gate which is controllable by a second pre-charge node, and coupled to the second LBL.

12. The apparatus of claim 11 , wherein an output of the first NAND gate is to control the first part of the split-keeper, and wherein an output of the second NAND gate is to control the second part of the split-keeper.

13. The apparatus of claim 10 , wherein the register file comprises:

a first pre-charge transistor coupled to the first LBL and to the first pre-charge node; and

a second pre-charge transistor coupled to the second LBL and to the second pre-charge node.

14. The apparatus of claim 9 , wherein the split-keeper includes a stack of devices which is operable to turn on after a delay and after a read operation begins.

15. The apparatus of claim 14 , wherein the stack of device comprises p-type devices.

16. A system comprising:

a memory;

a processor coupled to the memory, the memory including an apparatus which includes:

a first supply node to provide power supply;

a column of memory cells coupled to the first supply node;

a diode-connected device having a gate terminal connected to the first supply node, and a source terminal coupled to second supply node; and

a stack of devices coupled to the first supply node, wherein at least one device in the stack is coupled to the second supply node, and wherein the stack of devices is controllable according to an operation mode; and

a wireless interface for allowing the processor to communicate with another device.

17. The system of claim 16 , wherein the memory is an SRAM.

18. The system of claim 16 , wherein:

the stack of devices is to be turned on when a memory cell in the column of memory cells is being read from or written to;

the stack of devices is to be turned off when none of the memory cells in the column of memory cells is being read from or written to; and

the stack of devices is to be turned on during a low power mode operation.