Semiconductor device and method of manufacturing the same
There is provided a semiconductor device. The semiconductor device includes a source layer, a well pickup layer formed on the source layer, a body structure formed on the well pickup layer and including a well region contacting the well pickup layer and first junctions formed on side walls of the body structure, channel pillars contacting the body structure and protruding from the body structure, and contact layers formed on the side walls of the body structure and electrically connecting the body structure and the well pickup layer.
1. A semiconductor device comprising:
a source layer;
a well pickup layer formed on the source layer and electrically coupled to the source layer;
a body structure formed on the well pickup layer, and including a well region contacting the well pickup layer and first junctions including impurities and formed on side walls of the body structure;
channel pillars contacting the body structure and protruding from the body structure; and
contact layers formed on the side walls of the body structure, and electrically connecting the body structure and the well pickup layer.
2. The semiconductor device of claim 1 , further comprising a source select transistor including a gate insulating layer formed on a top surface of the body structure, and a gate electrode formed on the gate insulating layer.
3. The semiconductor device of claim 2 ,
wherein the first junction is a source region of the source select transistor, and
wherein, when the source select transistor is turned on, a channel is formed in the body structure among the first junctions.
4. The semiconductor device of claim 3 , wherein, when the source select transistor is turned on, currents flow from the channel pillars to the source layer through the channel, the first junctions, and the contact layers.
5. The semiconductor device of claim 1 , wherein, during an erase operation, electronic holes are supplied from the source layer to the channel pillars through the well pickup layer and the body structure.
6. The semiconductor device of claim 1 , further comprising memory cells stacked along the channel pillars.
7. The semiconductor device of claim 6 ,
wherein each of the memory cells comprises gate electrodes that surround side walls of the channel pillars, and memory layers interposed between the channel pillars and the gate electrodes, and
wherein, when the memory cells are turned on, channels are formed in the channel pillars.
8. The semiconductor device of claim 1 , further comprising a barrier layer interposed between the well pickup layer and the source layer, and electrically connected to the well pickup layer, the contact layers, and the source layer.
9. The semiconductor device of claim 1 , further comprising second junctions formed in the body structure, and contacting the channel pillars.
10. The semiconductor device of claim 1 , wherein the source layer comprises metal.
11. The semiconductor device of claim 1 ,
wherein the well pickup layer comprises p-type impurities of a first concentration, and
wherein the well region comprises p-type impurities of a second concentration lower than the first concentration.
12. The semiconductor device of claim 11 , wherein the first junction comprises n-type impurities.
13. The semiconductor device of claim 1 ,
wherein the well pickup layer is a polysilicon layer including p-type impurities, and
wherein the body structure is an undoped polysilicon layer.
14. The semiconductor device of claim 1 , further comprising a peripheral circuit positioned under the source layer, and connected to the source layer.
15. A semiconductor device comprising:
a source layer;
a well pickup layer formed on the source layer;
a body structure formed on the well pickup layer, and including a well region contacting the well pickup layer and first junctions formed on side walls of the body structure;
a stacked structure formed on the body structure;
channel pillars passing through the stacked structure, and contacting the body structure; and
contact layers formed on the side walls of the body structure, and electrically connecting the first junctions and the well pickup layer.
16. The semiconductor device of claim 15 , further comprising:
an insulating layer formed on a top surface of the body structure; and
a source select line formed on the insulating layer.
17. The semiconductor device of claim 15 , wherein the stacked structure comprises:
stacked word lines surrounding side walls of the channel pillars; and
memory layers interposed between the channel pillars and the word lines.
18. The semiconductor device of claim 15 , wherein the source layer is positioned under the stacked structure.
19. The semiconductor device of claim 15 ,
wherein the semiconductor device includes the source layer in the plural, and
wherein the plurality of source layers are positioned under the stacked structure.
20. The semiconductor device of claim 19 , wherein adjacent stacked structures share the plurality of source layers.