Semiconductor nanocrystals, a method for preparing a semiconductor nanocrystal, and product including same
Disclosed are a semiconductor nanocrystal comprising an alloy comprising an alloy including a Group III element, a Group II element, antimony, and a Group VI element; a method for preparing a semiconductor nanocrystal comprising an alloy comprising an alloy including a Group III element, a Group II element, antimony, and a Group VI element, and a light emitting device including an emissive material comprising a semiconductor nanocrystal comprising an alloy comprising an alloy including a Group III element, a Group II element, antimony, and a Group VI element.
1. A method for preparing a semiconductor nanocrystal comprising an alloy including a Group III element, a Group II element, antimony, and a Group VI element, the method comprising:
heating a first mixture comprising a Group II-precursor and a Group III-precursor at a first temperature,
adding an Sb-precursor and an Group VI-precursor to the first mixture at a second temperature to form a reaction mixture, the Sb-precursor comprising a composition represented by the formula (1):
Sb(Y(R) 3 ) 3 (I)
where Y is Ge, Sn, or Pb; and each R, independently, is alkyl, alkenyl, alkynyl, cycloalkyl, cycloalkenyl, heterocyclyl, aryl, or heteroaryl, wherein each R, independently, is optionally substituted by 1 to 6 substituents independently selected from hydrogen, halo, hydroxy, nitro, cyano, amino, cycloalkyl, cycloalkenyl, alkoxy, acyl, thio, or thioalkyl; and
heating the reaction mixture at a third temperature to form the semiconductor nanocrystal comprising the alloy including a Group III element, a Group II element, antimony, and a Group VI element.
2. A method in accordance with claim 1 wherein the first temperature is greater than room temperature but less than about 150° C.
3. A method m accordance with claim 1 wherein the second temperature is greater than 220° C.
4. A method m accordance with claim 1 wherein the third temperature is less than 325° C.
5. A method in accordance with claim 1 wherein the first temperature is in a range from about 75° C. to about 125° C.
6. A method in accordance with claim 1 wherein the second temperature is in a range from about 250° C. to about 325° C.
7. A method in accordance with claim 1 wherein the third temperature is in a range from about 260° C. to about 300° C.
8. A method in accordance with claim 1 wherein the mixture further includes a carboxylic acid compound.
9. A method in accordance with claim 1 wherein the molar ratio of Group III elements to Group II elements to antimony to Group VI elements included in the reaction mixture is 1 to 2 to 1 to 0.5.
10. A method m accordance with claim 1 further including overcoating the semiconductor nanocrystal cores with one or more morgamc semiconductor materials.
11. A method in accordance with claim 1 wherein the Group III element comprises aluminum, gallium, indium, or thallium.
12. A method in accordance with claim 1 wherein the Group II element comprises zinc, cadmium, or mercury.
13. A method in accordance with claim 1 wherein the Group VI element comprises oxygen, sulfur, selenium, or tellurium.
14. A method in accordance with claim 1 wherein the Group III element comprises indium, the Group II element comprises zinc, and the Group VI element comprises sulfur.