Semiconductor device and a method of manufacturing the same

1. A semiconductor integrated circuit device, comprising:

(a) a first interconnect made of a first metal film and formed over a semiconductor substrate;

(b) a first interlayer insulating film formed over the first interconnect;

(c) a first via hole for connecting to the first interconnect formed in the first interlayer insulating film;

(d) a first interconnect trench for connecting to the first via hole formed in the first interlayer insulating film;

(e) a second interconnect and a first connection portion formed together by filling a second metal film in the first interconnect trench and in the first via hole;

(f) a third interconnect made of a third metal film and formed over the second interconnect and the first interlayer insulating film;

(g) a second interlayer insulating film formed over the third interconnect;

(h) a second via hole for connecting to the third interconnect formed in the second interlayer insulating film;

(i) a second interconnect trench for connecting to the second via hole formed in the second interlayer insulating film; and

(j) a fourth interconnect and a second connection portion formed together by filling a fourth metal film in the second interconnect trench and in the second via hole;

wherein a thickness of the second interlayer insulating film is larger than a thickness of the first interlayer insulating film,

wherein the second interlayer insulating film is divided by a stopper film provided therein,

wherein a bottom of the fourth interconnect is arranged substantially at a level of the stopper film,

wherein the first interlayer insulating film has no stopper film formed therein,

wherein a bottom of the second interconnect is arranged on the first interlayer insulating film,

wherein a depth of the second interconnect trench is greater than a depth of the first interconnect trench,

wherein the first interlayer insulating film is formed with an SiOC as a main component,

wherein the second interlayer insulating film is formed with a silicon oxide or a fluorinated silicon oxide as a main component,

wherein a diameter of the second via hole is greater than a diameter of the first via hole,

wherein the first, second, third and fourth metal films are formed with copper as a main component,

wherein a first barrier insulating film which prevents diffusion of copper is formed on the first interconnect, formed under the first interlayer insulating film and includes silicon, carbon and nitrogen,

wherein a second barrier insulating film is formed between the first barrier insulating film and the first interlayer insulating film and does not include nitrogen,

wherein a third barrier insulating film which prevents diffusion of copper is formed between the third interconnect and the second interlayer insulating film so as to be directly in contact with the third interconnect and the second interlayer insulating film and includes silicon, carbon and nitrogen, and

wherein the etching stopper film includes silicon and nitrogen and is formed of a different material from the first, second and third barrier insulating films.

2. A semiconductor integrated circuit device according to claim 1 ,

further comprising a first barrier metal formed inside of the first interconnect trench and the first via hole and formed between the first interlayer insulating film and the second metal film.

3. A semiconductor integrated circuit device according to claim 1 ,

further comprising a second barrier metal formed inside of the second interconnect trench and the second via hole and formed between the second interlayer insulating film and the fourth metal film.

4. A semiconductor integrated circuit device according to claim 1 , wherein the first interconnect trench is shallower than the first via hole, and the second interconnect trench is shallower than the second via hole.

5. A semiconductor integrated circuit device according to claim 1 , wherein the second via hole is deeper than the first via hole.

6. A semiconductor integrated circuit device, comprising:

(a) a first interconnect made of a first metal film and formed over a main surface of a semiconductor substrate;

(b) a first interlayer insulating film formed over the first interconnect;

(c) a first via hole formed in the first interlayer insulating film and connected to the first interconnect;

(d) a first interconnect trench formed in the first interlayer insulating film in a region including a region in which the first via hole has been formed;

(e) a second interconnect formed by filling a second metal film in the first interconnect trench and the first via hole;

(f) a third interconnect made of a third metal film and formed over the second interconnect and the first interlayer insulating film;

(g) a second interlayer insulating film formed over the third interconnect;

(h) a second via hole formed in the second interlayer insulating film and connected to the third interconnect;

(i) a second interconnect trench formed in the second interlayer insulating film in a region including a region in which the second via hole has been formed; and

(j) a fourth interconnect formed by filling a fourth metal film in the second interconnect trench and the second via hole,

wherein the second interlayer insulating film is thicker than the first interlayer insulating film,

wherein an etching stopper film is formed in the second interlayer insulating film,

wherein a bottom of the second interconnect trench is arranged near the etching stopper film,

wherein the first interlayer insulating film has no etching stopper film formed therein,

wherein a depth of the second interconnect trench is greater than a depth of the first interconnect trench,

wherein the first interlayer insulating film is formed with an SiOC as a main component,

wherein the second interlayer insulating film is formed with a silicon oxide or a fluorinated silicon oxide as a main component,

wherein a diameter of the second via hole is greater than a diameter of the first via hole,

wherein the first, second, third and fourth metal films are formed with copper as a main component,

wherein a first barrier insulating film which prevents diffusion of copper is formed on the first interconnect, formed under the first interlayer insulating film and includes silicon, carbon and nitrogen,

wherein a second barrier insulating film is formed between the first barrier insulating film and the first interlayer insulating film,

wherein a nitrogen concentration of the first barrier insulating film is larger than a nitrogen concentration of the second barrier insulating film,

wherein a third barrier insulating film which prevents diffusion of copper is formed between the third interconnect and the second interlayer insulating film so as to be directly in contact with the third interconnect and the second interlayer insulating film and includes silicon, carbon and nitrogen, and

wherein the etching stopper film is formed of an SiN or an SiON, and is formed of a different material from the first, second and third barrier insulating films.

7. A semiconductor integrated circuit device according to claim 6 ,

further comprising a first barrier metal formed inside of the first interconnect trench and the first via hole and formed between the first interlayer insulating film and the second metal film.

8. A semiconductor integrated circuit device according to claim 6 ,

further comprising a second barrier metal formed inside of the second interconnect trench and the second via hole and formed between the second interlayer insulating film and the fourth metal film.

9. A semiconductor integrated circuit device according to claim 6 , wherein the first interconnect trench is shallower than the first via hole, and the second interconnect trench is shallower than the second via hole.

10. A semiconductor integrated circuit device according to claim 6 , wherein the second via hole is deeper than the first via hole.