Graphene FET devices, systems, and methods of using the same for sequencing nucleic acids
Provided herein are devices, systems, and methods of employing the same for the performance of bioinformatics analysis. The apparatuses and methods of the disclosure are directed in part to large scale graphene FET sensors, arrays, and integrated circuits employing the same for analyte measurements. The present GFET sensors, arrays, and integrated circuits may be fabricated using conventional CMOS processing techniques based on improved GFET pixel and array designs that increase measurement sensitivity and accuracy, and at the same time facilitate significantly small pixel sizes and dense GFET sensor based arrays. Improved fabrication techniques employing graphene as a reaction layer provide for rapid data acquisition from small sensors to large and dense arrays of sensors. Such arrays may be employed to detect a presence and/or concentration changes of various analyte types in a wide variety of chemical and/or biological processes, including DNA hybridization and/or sequencing reactions. Accordingly, GFET arrays facilitate DNA sequencing techniques based on monitoring changes in hydrogen ion concentration (pH), changes in other analyte concentration, and/or binding events associated with chemical processes relating to DNA synthesis within a gated reaction chamber of the GFET based sensor.
1. A method for forming a semiconductor wafer with transistors on which is a two-dimensional (2D) material layer, the method comprising:
patterning a 2D material layer to define a plurality of 2D material channels, each of the plurality of 2D material channels aligned with a corresponding interconnect line of a plurality of interconnect lines on a semiconductor wafer;
depositing a first dielectric layer over each of the plurality of 2D material channels;
opening a plurality of holes or trenches in the first dielectric layer, wherein some plurality of holes or trenches are aligned to the plurality of 2D material channels and wherein some of the plurality of holes or trenches are aligned to the plurality of interconnect lines;
depositing a conductive material in each of the plurality of holes or trenches to create a plurality of vias that contact the plurality of interconnect lines and the plurality of 2D material channels;
depositing and patterning a set of second plurality of interconnect lines over the dielectric layer and contacting the plurality of vias;
depositing a second dielectric layer over the first dielectric layer and the second plurality of interconnect lines;
patterning and opening each of the plurality of holes or trenches in the second dielectric layer to expose a plurality of portions of the second plurality of interconnect lines for use as a plurality of pads; and
patterning and opening the plurality of holes or trenches in the second and first dielectric layers to expose a plurality of portions of the plurality of 2D material channels.
2. The method according to claim 1 wherein the 2D material is one of graphene, Molybdenum disulfide (MoS 2 ), Phosphorene (black phosphorous), Silicene, Borophene, Tungsten disulfide (WS 2 ), Boron Nitride, WSe 2 , Stanene (2D tin), Graphane, Germanane, Nickel HITP, and Mxenes (Ti2C, (Ti0.5, Nb0.5), V2C, Nb2C, Ti3C2, Ti3CN, Nb4C3, Ta4C3).
3. The method according to claim 1 wherein the 2D material is graphene.
4. The method according to claim 1 wherein the 2D material is over and contacting a dielectric layer of the semiconductor wafer.
5. The method according to claim 4 wherein the dielectric layer is an oxide layer.
6. The method according to claim 1 wherein the anisotropic etching process is a plasma, Reactive Ion Etching (RIE) or Deep Reactive Ion Etching (DRIE) process.
7. The method according to claim 1 wherein the 2D material is patterned using a photoresist and etching process.
8. The method according to claim 7 wherein the etching process is a dry etching process.
9. The method according to claim 8 wherein the dry etching process is an oxygen plasma process.
10. The method according to claim 7 wherein a hardmask is first deposited over the 2D material prior to the patterning and etching.
11. The method according to claim 1 wherein the first dielectric layer or second dielectric layer is a silicon oxide, a silicon nitride, an oxy-nitride, a silicon carbide, a carbon-doped silicon oxide or a fluorine-doped silicon oxide.
12. The method according to claim 1 wherein the first dielectric layer or second dielectric layer is deposited by a CVD process, a PECVD or a TEOS process.
13. The method according to claim 1 wherein the plurality of vias are comprised of Cu, W, Al, Pt or Au.
14. The method according to claim 1 wherein the second interconnect layer is comprised of Al, Cu, Pt or Au.
15. The method according to claim 13 or claim 14 wherein the plurality of vias or interconnect layer is deposited with a PVD or plating process.
16. The method according to claim 1 wherein a work function matching material is deposited on the 2D material exposed by the hole or trench in the first dielectric layer.
17. The method according to claim 16 wherein the work function matching material is comprised of Yb, Ag, Ta, W, Al, Pa, Va, Cr, Ti, Al, Fe, Cu, Ru, Ni, Mo, Sn, Sb or Au.
18. A method for forming a semiconductor wafer with transistors on which is a two-dimensional (2D) material layer, the method comprising:
patterning a 2D material layer to define a plurality of 2D material channels, each of the plurality of 2D material channels aligned with a corresponding interconnect line of a plurality of interconnect lines on a semiconductor wafer;
depositing an etch stop layer over the plurality 2D material channels;
depositing a first dielectric layer over the etch stop layer;
opening a plurality of holes or trenches in the first dielectric layer, wherein some plurality of holes or trenches are aligned to the plurality of 2D material channels and wherein some of the plurality of holes or trenches are aligned to the plurality of interconnect lines;
depositing a conductive material in each of the plurality of holes or trenches to create a plurality of vias that contact the plurality of interconnect lines and the plurality of 2D material channels;
depositing and patterning a set of second plurality of interconnect lines over the dielectric layer and contacting the plurality of vias;
depositing a second dielectric layer over the first dielectric layer and the second plurality of interconnect lines;
patterning and opening each of the plurality of holes or trenches in the second dielectric layer to expose a plurality of portions of the second plurality of interconnect lines for use as a plurality of pads;
patterning and opening the plurality of holes or trenches in the second and first dielectric layers to expose the etch stop layer over the plurality of 2D material channels; and
opening the plurality of holes or trenches in the etch stop layer to expose a plurality of portions of the plurality of 2D material channels.
19. The method according to claim 18 wherein the 2D material is one of graphene, Molybdenum disulfide (MoS 2 ), Phosphorene (black phosphorous), Silicene, Borophene, Tungsten disulfide (WS 2 ), Boron Nitride, WSe 2 , Stanene (2D tin), Graphane, Germanane, Nickel HITP, and Mxenes (Ti2C, (Ti0.5, Nb0.5), V2C, Nb2C, Ti3C2, Ti3CN, Nb4C3, Ta4C3).
20. The method according to claim 18 wherein the 2D material is graphene.
21. The method according to claim 18 wherein the 2D material is over and contacting a dielectric layer of the semiconductor wafer.
22. The method according to claim 21 wherein the dielectric layer is an oxide layer.
23. The method according to claim 18 wherein the anisotropic etching process is a plasma, Reactive Ion Etching (RIE) or Deep Reactive Ion Etching (DRIE) process.
24. The method according to claim 18 wherein the 2D material is patterned using a photoresist and etching process.
25. The method according to claim 24 wherein the etching process is a dry etching process.
26. The method according to claim 25 wherein the dry etching process is an oxygen plasma process.
27. The method according to claim 24 wherein a hardmask is first deposited over the 2D material prior to the patterning and etching.
28. The method according to claim 18 wherein the first dielectric layer or second dielectric layer is a silicon oxide, a silicon nitride, an oxy-nitride, a silicon carbide, a carbon-doped silicon oxide or a fluorine-doped silicon oxide.
29. The method according to claim 18 wherein the first dielectric layer or second dielectric layer is deposited by a CVD process, a PECVD or a TEOS process.
30. The method according to claim 18 wherein the plurality of vias are comprised of Cu, W, Al, Pt or Au.
31. The method according to claim 18 wherein the second interconnect layer is comprised of Al, Cu, Pt or Au.
32. The method according to claim 30 or claim 31 wherein the plurality of vias or interconnect layer is deposited with a PVD or plating process.
33. The method according to claim 18 wherein a work function matching material is deposited on the 2D material exposed by the hole or trench in the first dielectric layer.
34. The method according to claim 32 wherein the work function matching material is comprised of Yb, Ag, Ta, W, Al, Pa, Va, Cr, Ti, Al, Fe, Cu, Ru, Ni, Mo, Sn, Sb or Au.
35. A method for forming a semiconductor wafer with transistors on which is a two-dimensional (2D) material layer, the method comprising:
patterning a 2D material layer to define a plurality of 2D material channels, each of the plurality of 2D material channels aligned with a corresponding interconnect line of a plurality of interconnect lines on a semiconductor wafer;
depositing an etch stop layer over the plurality 2D material channels;
depositing a first dielectric layer over the etch stop layer;
opening a plurality of holes or trenches in the first dielectric layer, wherein some plurality of holes or trenches are aligned to the plurality of 2D material channels and wherein some of the plurality of holes or trenches are aligned to the plurality of interconnect lines;
depositing a conductive material in each of the plurality of holes or trenches to create a plurality of vias that contact the plurality of interconnect lines and the plurality of 2D material channels;
depositing and patterning a set of second plurality of interconnect lines over the dielectric layer and contacting the plurality of vias;
depositing a second dielectric layer over the first dielectric layer and the second plurality of interconnect lines;
patterning and opening each of the plurality of holes or trenches in the second dielectric layer to expose a plurality of portions of the second plurality of interconnect lines for use as a plurality of pads;
patterning and opening the plurality of holes or trenches in the second and first dielectric layers using an anisotropic etching process to expose the etch stop layer over the plurality of 2D material channels; and
opening the plurality of holes or trenches in the etch stop layer to expose a plurality of portions of the plurality of 2D material channels.
36. The method according to claim 35 wherein the 2D material is one of graphene, Molybdenum disulfide (MoS 2 ), Phosphorene (black phosphorous), Silicene, Borophene, Tungsten disulfide (WS 2 ), Boron Nitride, WSe 2 , Stanene (2D tin), Graphane, Germanane, Nickel HITP, and Mxenes (Ti2C, (Ti0.5, Nb0.5), V2C, Nb2C, Ti3C2, Ti3CN, Nb4C3, Ta4C3).
37. The method according to claim 35 wherein the 2D material is graphene.
38. The method according to claim 35 wherein the 2D material is over and contacting a dielectric layer of the semiconductor wafer.
39. The method according to claim 38 wherein the dielectric layer is an oxide layer.
40. The method according to claim 35 wherein the anisotropic etching process is a plasma, Reactive Ion Etching (RIE) or Deep Reactive Ion Etching (DRIE) process.
41. The method according to claim 35 wherein the 2D material is patterned using a photoresist and etching process.
42. The method according to claim 41 wherein the etching process is a dry etching process.
43. The method according to claim 42 wherein the dry etching process is an oxygen plasma process.
44. The method according to claim 41 wherein a hardmask is first deposited over the 2D material prior to the patterning and etching.
45. The method according to claim 35 wherein the etch stop layer is a nitride, a carbide, an oxide or a material comprised of Si, C and N.
46. The method according to claim 44 wherein the etch stop layer is silicon nitride, silicon carbide, tantalum oxide, hafnium oxide, or aluminum oxide.
47. The method according to claim 35 wherein the etch stop layer thickness is less than 100 nm thick.
48. The method according to claim 35 wherein the first dielectric layer or second dielectric layer is a silicon oxide, a silicon nitride, an oxy-nitride, a silicon carbide, a carbon-doped silicon oxide or a fluorine-doped silicon oxide.
49. The method according to claim 35 wherein the first dielectric layer or second dielectric layer is deposited by a CVD process, a PECVD or a TEOS process.
50. The method according to claim 35 wherein opening of holes or trenches in the etch stop layer is accomplished using a wet etching process.
51. The method according to claim 49 wherein the etchant has a high selectivity for the etch stop layer over the dielectric layers.
52. The method according to claim 49 wherein as a result of the wet etching process the etch stop layer is undercut some distance under the first dielectric layer.
53. The method according to claim 35 wherein the plurality of vias are comprised of Cu, W, Al, Pt or Au.
54. The method according to claim 35 wherein the second interconnect layer is comprised of Al, Cu, Pt or Au.
55. The method according to claim 53 or claim 54 wherein the plurality of vias or interconnect layer is deposited with a PVD or plating process.
56. The method according to claim 35 wherein a work function matching material is deposited on the 2D material exposed by the hole or trench in the first dielectric layer.
57. The method according to claim 56 wherein the work function matching material is comprised of Yb, Ag, Ta, W, Al, Pa, Va, Cr, Ti, Al, Fe, Cu, Ru, Ni, Mo, Sn, Sb or Au.