URANIUM OXIDE SOLAR CELLS
Solar cells including thin film depleted uranium oxide (DUO) may be produced using an ion beam assisted deposition (IBAD) process, for example. p-type DUO film and n-type DUO film may form a p/n junction. The photovoltaic (PV) structure may be completed by evaporating a metal electrode on top of one of the DUO films.
1 . An apparatus, comprising:
an n-type material placed adjacent to or affixed to a p-type material, forming a p/n junction, wherein at least one of the p-type material and the n-type material comprises depleted uranium oxide (DUO).
2 . The apparatus of claim 1 , wherein the n-type material and the p-type material are sufficiently thin to allow light to pass through to the p/n junction between the p-type material and the n-type material.
3 . The apparatus of claim 1 , wherein the p-type material comprises an oxygen-to-uranium (O/U) ratio that causes a metal deficiency.
4 . The apparatus of claim 1 , wherein the n-type material comprises an oxygen-to-uranium (O/U) ratio that causes a metal excess.
5 . The apparatus of claim 1 , wherein the p-type material, the n-type material, or both, comprise uranium dioxide (UO 2 ).
6 . The apparatus of claim 1 , wherein p-type material, the n-type material, or both, are doped with one or more group III elements, one or more group V elements, or any combination thereof.
7 . The apparatus of claim 1 , further comprising:
a transparent conductive electrode positioned on one side of the p/n junction; and
a metal electrode positioned on another side of the p/n junction.
8 . The apparatus of claim 7 , wherein
the p-type material comprises a p-type DUO film and the n-type DUO material comprises an n-type DUO film, and
the p-type DUO film is deposited on the transparent conductive electrode.
9 . The apparatus of claim 8 , wherein
the n-type DUO film is deposited on the p-type DUO film, and
the metal electrode is deposited on the n-type DUO film.
10 . A depleted uranium oxide (DUO) solar cell, comprising:
a p-type DUO film; and
an n-type DUO film positioned so as to form a p/n junction between the p-type DUO film and the n-type DUO film, wherein
the n-type DUO film is deposited on a transparent conductive substrate.
11 . The DUO solar cell of claim 10 , wherein the p-type DUO film comprises an oxygen-to-uranium (O/U) ratio that causes a metal deficiency.
12 . The DUO solar cell of claim 10 , wherein the n-type DUO film comprises an oxygen-to-uranium (O/U) ratio that causes a metal excess.
13 . The DUO solar cell of claim 10 , wherein the p-type DUO film, the n-type DUO film, or both, comprise uranium dioxide (UO 2 ).
14 . The DUO solar cell of claim 10 , wherein p-type DUO film, the n-type DUO film, or both, are doped with one or more group III elements, one or more group V elements, or any combination thereof.
15 . An apparatus, comprising:
a transparent electrode;
a p-type depleted uranium oxide (DUO) film deposited on the transparent electrode;
an n-type DUO film deposited on the p-type DUO film; and
a metal electrode deposited on the n-type DUO film.
16 . The apparatus of claim 15 , wherein the n-type DUO film and the p-type DUO film are sufficiently thin to allow light to pass through to the p/n junction between the p-type material and the n-type material.
17 . The apparatus of claim 15 , wherein the p-type DUO film comprises an oxygen-to-uranium (O/U) ratio that causes a metal deficiency.
18 . The apparatus of claim 15 , wherein the n-type DUO film comprises an oxygen-to-uranium (O/U) ratio that causes a metal excess.
19 . The apparatus of claim 15 , wherein the p-type DUO film, the n-type DUO film, or both, comprise uranium dioxide (UO 2 ).
20 . The apparatus of claim 15 , wherein p-type DUO film, the n-type DUO film, or both, are doped with one or more group III elements, one or more group V elements, or any combination thereof.