Semiconductor device having voltage generation circuit
The present invention provides a voltage generation circuit which outputs high-precision output voltage in a wide temperature range. A semiconductor device has a voltage generation circuit. The voltage generation circuit has a reference voltage generation circuit which outputs reference voltage, and a plurality of correction circuits for generating a correction current and making it fed back to the reference voltage generation circuit. The correction circuits generate sub correction currents which monotonously increase from predetermined temperature which varies among the correction circuits toward a low-temperature side or a high-temperature side. The correction current is sum of a plurality of sub correction currents.
1. A semiconductor device having a voltage generating circuit, wherein the voltage generation circuit comprises:
a reference voltage generation circuit that outputs reference voltage; and
a plurality of correction circuits that generates a correction current and feeds the correction current back to the reference voltage generation circuit,
wherein each of the correction circuits generates a sub correction current that increases from a predetermined temperature, which varies among the correction circuits, toward a low-temperature side or a high-temperature side,
wherein each of the correction circuits generates the respective sub correction current based at least in part on a voltage or current output from the reference voltage generation circuit, and
wherein the correction current is a sum of a plurality of the sub correction currents generated by the correction circuits.
2. The semiconductor device according to claim 1 , wherein each of the correction circuits generates the respective sub correction current based on at least one of:
a difference voltage between base-emitter voltages of two bipolar transistors having different emitter areas,
a current corresponding to the difference voltage,
a forward voltage of a P-N junction, and
a current corresponding to the forward voltage.
3. The semiconductor device according to claim 2 , wherein the sub correction currents of the correction circuits increase from the predetermined temperature toward the high-temperature side.
4. The semiconductor device according to claim 3 , wherein each of the correction circuits includes:
a resistor having one end coupled to a first power supply,
a PMOS transistor whose source is coupled to the first power supply and whose gate is coupled to an other end of the resistor, and
a constant current supply coupled between the other end of the resistor and a second power supply,
wherein the constant current supply generates current according to the difference voltage of the base-emitter of the two bipolar transistors having different emitter areas,
wherein a characteristic of the resistors varies among the plurality of correction circuits, and
wherein the PMOS transistor outputs the respective sub correction current from its drain.
5. The semiconductor device according to claim 3 , wherein each of the correction circuits includes:
a resistor having one end coupled to a first power supply,
a PMOS transistor whose source is coupled to the first power supply and whose gate is coupled to an other end of the resistor, and
a constant current supply coupled between the other end of the resistor and a second power supply,
wherein the constant current supply generates current according to the difference voltage of the base-emitter voltages of the two bipolar transistors having different emitter areas and varies among the plurality of correction circuits, and
wherein the PMOS transistor outputs the respective sub correction current from its drain.
6. The semiconductor device according to claim 2 , wherein the sub correction currents of the correction circuits increase from the predetermined temperature toward the low-temperature side.
7. The semiconductor device according to claim 6 , wherein each of the correction circuits includes:
a constant current supply having one end coupled to a first power supply,
a PMOS transistor whose source is coupled to the first power supply and whose gate is coupled to an other end of the constant current supply, and
a resistor coupled between the other end of the constant current supply and a second power supply,
wherein the constant current supply generates current according to the difference voltage of the base-emitter voltages of the two bipolar transistors having different emitter areas,
wherein a characteristic of the resistors varies among the plurality of correction circuits, and
wherein the PMOS transistor outputs the respective sub correction current from its drain.
8. The semiconductor device according to claim 6 , wherein each of the plurality of correction circuits includes:
a constant current supply having one end coupled to a first power supply,
a PMOS transistor whose source is coupled to the first power supply and whose gate is coupled to an other end of the constant current supply, and
a resistor coupled between the other end of the constant current supply and a second power supply,
wherein the constant current supply generates current according to the difference voltage of the base-emitter voltages of the two bipolar transistors having different emitter areas and varies among the correction circuits, and
wherein the PMOS transistor outputs the respective sub correction current from its drain.
9. The semiconductor device according to claim 1 , wherein, for each of the correction circuits:
in a first temperature range extending from the respective predetermined temperature to the low-temperature side or the high-temperature side, the generated sub correction current has a non-zero value, and
in a second temperature range outside the first temperature range, the generated sub correction current is zero.
10. The semiconductor device according to claim 1 , wherein the correction circuits have predetermined temperatures that are different from each other.