IP Library Granted Patent US 10,290,499
Granted Patent B2
US 10,290,499 · App. 15/194,809 · Granted May 14, 2019

Substrate processing apparatus and substrate processing method

Inventor: Tomohiro Goto (Yokkaichi, JP)
Assignee: TOSHIBA MEMORY CORPORATION
H01L21/0271B05B1/30H01L21/67109
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Quick Facts
Patent No.
US 10,290,499
App. No.
15/194,809
Granted
May 14, 2019
Kind
B2
Abstract

According to one embodiment, a substrate processing apparatus includes a nozzle and a control device. The nozzle dispenses a chemical solution onto a substrate. The control device controls a mechanism which promotes evaporation of a solvent contained in the chemical solution remaining in the nozzle to form a solidified layer in the nozzle. The solidified layer is obtained by solidifying components contained in the remaining chemical solution.

Claims (39)

1. A substrate processing apparatus comprising:

a nozzle to dispense a chemical solution onto a substrate;

a control device that controls a mechanism which promotes evaporation of a solvent contained in the chemical solution remaining in the nozzle, thereby solidifying components contained in the remaining chemical solution to form a solidified layer in the nozzle; and

a container placed at a position in which the nozzle is made to wait and into which a tip of the nozzle is inserted, wherein

the mechanism includes a heater that supplies heat to the nozzle in the position in which the nozzle is made to wait,

the heater is provided in the container, and

the control device controls operation of the heater.

2. The substrate processing apparatus according to claim 1 , wherein the control device makes the heater stop operating when a preset time has elapsed since the heater started operating.

3. The substrate processing apparatus according to claim 1 , wherein the control device controls dispensing the chemical solution through the nozzle and detaches the solidified layer from the nozzle in the position in which the nozzle is made to wait, by preliminary dispensing of the chemical solution.

4. The substrate processing apparatus according to claim 3 , wherein the control device controls the nozzle to move and, after the preliminary dispensing, moves the nozzle to a position over the substrate.

5. The substrate processing apparatus according to claim 3 ,

wherein the control device makes the heater operate before the preliminary dispensing.

6. The substrate processing apparatus according to claim 5 , wherein the control device controls the nozzle to move and, before the heater is made to operate before the preliminary dispensing, moves the nozzle.

7. The substrate processing apparatus according to claim 6 , wherein the control device makes the heater stop operating when a preset time has elapsed since the heater started operating, and

the control device controls the nozzle to move and, after the preliminary dispensing, moves the nozzle to a position over the substrate.

8. The substrate processing apparatus according to claim 1 , wherein the mechanism includes a pump that generates air current around the nozzle in the position in which the nozzle is made to wait,

the pump expels gas in the container, and

the control device controls operation of the pump.

9. The substrate processing apparatus according to claim 8 , wherein the control device makes the pump stop operating when a preset time has elapsed since the pump started operating.

10. The substrate processing apparatus according to claim 9 , wherein the control device makes the heater stop operating when a preset time has elapsed since the heater started operating,

the control device controls dispensing the chemical solution through the nozzle and detaches the solidified layer from the nozzle in the position in which the nozzle is made to wait, by preliminary dispensing of the chemical solution,

the control device controls the nozzle to move and, after the preliminary dispensing, moves the nozzle to a position over the substrate,

the control device makes the heater operate before the preliminary dispensing, and

the control device controls the nozzle to move and, before the heater is made to operate before the preliminary dispensing, moves the nozzle.

11. A substrate processing apparatus comprising:

a nozzle to dispense a chemical solution onto a substrate;

a control device that controls a mechanism which promotes evaporation of a solvent contained in the chemical solution remaining in the nozzle, thereby solidifying components contained in the remaining chemical solution to form a solidified layer in the nozzle; and

a container placed at a position in which the nozzle is made to wait and into which a tip of the nozzle is inserted, wherein

the mechanism includes a pump that generates air current around the nozzle in the position in which the nozzle is made to wait,

the pump expels gas in the container, and

the control device controls operation of the pump.

12. The substrate processing apparatus according to claim 11 , wherein the control device makes the pump stop operating when a preset time has elapsed since the pump started operating.

13. The substrate processing apparatus according to claim 11 , wherein the control device controls dispensing the chemical solution through the nozzle and detaches the solidified layer from the nozzle in the position in which the nozzle is made to wait, by preliminary dispensing of the chemical solution.

14. The substrate processing apparatus according to claim 13 , wherein the control device controls the nozzle to move and, after the preliminary dispensing, moves the nozzle to a position over the substrate.

15. The substrate processing apparatus according to claim 13 , wherein the mechanism includes a heater that supplies heat to the nozzle in the position in which the nozzle is made to wait, and

the control device makes the heater operate before the preliminary dispensing.

16. The substrate processing apparatus according to claim 15 , wherein the control device controls the nozzle to move and, before the heater is made to operate before the preliminary dispensing, moves the nozzle.

17. The substrate processing apparatus according to claim 16 , wherein the control device makes the pump stop operating when a preset time has elapsed since the pump started operating, and

the control device controls the nozzle to move and, after the preliminary dispensing, moves the nozzle to a position over the substrate.

Assignments (5)
MERGER Recorded Jan 22, 2021
From: TOSHIBA MEMORY CORPORATION
To: K.K. PANGEA
Reel/Frame 055659/0471 →
CHANGE OF NAME AND ADDRESS Recorded Jan 22, 2021
From: TOSHIBA MEMORY CORPORATION
To: KIOXIA CORPORATION
Reel/Frame 055669/0001 →
CHANGE OF NAME AND ADDRESS Recorded Jan 22, 2021
From: K.K. PANGEA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 055669/0401 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 5, 2017
From: KABUSHIKI KAISHA TOSHIBA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 043088/0620 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 28, 2016
From: GOTO, TOMOHIRO
To: KABUSHIKI KAISHA TOSHIBA
Reel/Frame 039027/0129 →
Priority Claims (1)
JP 2016-012384 · Jan 26, 2016 · national
Continuity (1)
Related Publication 20170213721A1 · Jul 27, 2017