Method for manufacturing semiconductor device
A method of manufacturing a semiconductor device according to one embodiment includes forming a first film including a first metal above a processing target member. The method includes forming a second film including two or more types of element out of a second metal, carbon, and boron above the first film. The method includes forming a third film including the first metal above the second film. The method includes forming a mask film by providing an opening part to a stacked film including the first film, the second film and the third film. The method includes processing the processing target member by performing etching using the mask film as a mask.
1. A method of manufacturing a semiconductor device, comprising:
forming a first film including tungsten above a processing target member;
forming a second film including tungsten and carbon above the first film, the second film being thinner than the first film;
forming a third film including tungsten above the second film, the third film being thicker than the second film;
forming a fourth film including tungsten and carbon above the processing target member, the fourth film being thinner than the first film, the first film being formed above the fourth film;
forming a mask film by providing an opening part to a stacked film including the first film, the second film, the third film, and the fourth film; and
processing the processing target member by performing etching using the mask film as a mask.
2. The method according to claim 1 , wherein
a silicon oxide is exposed on an upper surface of the processing target member.
3. The method according to claim 1 , further comprising:
forming a fifth film including tungsten and nitrogen on the processing target member,
the first film being formed on the fifth film, and
the opening part being provided also to the fifth film in the forming of the mask film.
4. The method according to claim 1 , wherein
the forming of the second film and the forming of the third film are alternately performed.
5. The method according to claim 1 , wherein
the first film and the third film are lower in carbon concentration than the second film.
6. The method according to claim 1 , further comprising:
removing the mask film after the processing of the processing target member.
7. The method according to claim 1 , wherein
the second film is weaker in compressive stress than the third film.
8. The method according to claim 1 , wherein
tensile stress is caused in the second film, and compressive stress is caused in the third film.
9. A method of manufacturing a semiconductor device, comprising:
forming a first film including a first metal above a processing target member;
forming a second film including two or more types of elements out of a second metal, carbon, and boron above the first film;
forming a third film including the first metal above the second film;
forming a mask film by providing an opening part to a stacked film including the first film, the second film and the third film; and
processing the processing target member by performing etching using the mask film as a mask,
wherein
insulating films and sacrifice films are alternately stacked above a substrate in the processing target member,
the processing of the processing target member includes forming a hole penetrating the insulating films and the sacrifice films and reaching the substrate, and
the method further comprising:
forming a charge storage film on an inner surface of the hole;
forming a tunnel insulating film on a side surface of the charge storage film;
forming a semiconductor pillar on a side surface of the tunnel insulating film;
forming an opening part penetrating the insulating films and the sacrifice films after the forming of the semiconductor pillar;
removing the sacrifice films by performing etching via the opening part; and
forming electrode films in spaces from which the sacrifice films have been removed.
10. A method of manufacturing a semiconductor device, comprising:
forming a stacked body by alternately forming first layers and second layers above a substrate;
forming a first film including a first metal above the stacked body;
forming a second film above the first film, the second film including at least one of carbon and boron, and the second film including the first metal;
forming a third film including the first metal above the second film;
forming a mask film by providing an opening part to a stacked film including the first film, the second film and the third film;
forming a hole penetrating the first layers and the second layers and reaching the substrate by performing etching using the mask film as a mask;
forming a charge storage film on an inner surface of the hole;
forming a tunnel insulating film on a side surface of the charge storage film; and
forming a semiconductor pillar on a side surface of the tunnel insulating film,
the first film and the third film being lower in total concentration of carbon and boron than the second film.
11. The method according to claim 10 , further comprising:
removing the mask film after the forming of a hole.