Organic electroluminescent compounds and organic optoelectronic devices comprising the same

1. A compound of Formula (I):

wherein

X 1 to X 12 are each independently CR 1 or N;

Y 1 is O, S or NR 2 ;

Y 2 is O, S, CR 3 R 4 , NR 5 or SiR 6 R 7 ;

R 1 to R 7 are each independently hydrogen, deuterium, C 1-30 alkyl, C 6-30 aryl or C 2-20 heteroaryl;

L is a linking moiety which enables the structure of Formula (I) to form a conjugated system;

when n is 1, 2 or 3, m is 2 or 3; when n is 2 or 3, m is 1, 2 or 3;

if n is greater than 1, each Moiety A in Formula (I) is the same as each other or different from each other; and

if m is greater than 1, each Moiety B in Formula (I) is the same as each other or different from each other.

2. The compound according to claim 1 , wherein said L is C 6-30 aryl or C 2-30 heteroaryl.

3. The compound according to claim 1 , wherein said L is selected from the following structures:

wherein, * represents CR 8 , N or a site linked to said Moiety A or said Moiety B, and said R 8 is each independently hydrogen, deuterium, C 1-6 alkyl, C 6-16 aryl or C 2-6 heteroaryl.

4. The compound according to claim 3 , wherein substitution positions of said Moiety A and said Moiety B on said L are spaced by at least one atom.

5. The compound according to claim 1 , wherein said Moiety A is selected from the following groups:

6. The compound according to claim 1 , wherein said Moiety B is selected from the following groups:

7. The compound according to claim 1 , wherein the energy gap ΔE st between the lowest singlet state and the lowest triplet state of said compound is less than or equal to 0.30 eV.

8. The compound according to claim 7 , wherein the energy gap ΔE st between the lowest singlet state and the lowest triplet state of said compound is less than or equal to 0.25 eV.

9. The compound according to claim 7 , wherein the energy gap ΔE st between the lowest singlet state and the lowest triplet state of said compound is less than or equal to 0.15 eV.

10. The compound according to claim 7 , wherein the energy gap ΔE st between the lowest singlet state and the lowest triplet state of said compound is less than or equal to 0.1 eV.

11. The compound according to claim 7 , wherein the energy gap ΔE st between the lowest singlet state and the lowest triplet state of said compound is less than or equal to 0.05 eV.

12. The compound according to claim 7 , wherein the energy gap ΔE st between the lowest singlet state and the lowest triplet state of said compound is less than or equal to 0.02 eV.

13. The compound according to claim 7 , wherein the energy gap ΔE st between the lowest singlet state and the lowest triplet state of said compound is less than or equal to 0.01 eV.

14. The compound according to claim 1 , selected from:

15. A process for manufacturing an organic optoelectronic device, comprising providing an anode, a cathode and one or more organic layers located between the anode and the cathode, wherein at least one layer of the organic layers comprises a compound of claim 1 .

16. An organic optoelectronic device, comprising an anode, a cathode and one or more organic layers located between the anode and the cathode, wherein at least one layer of the organic layers comprises a compound of Formula (I):

wherein

X 1 to X 12 are each independently CR 1 or N;

Y 1 is O, S or NR 2 ;

Y 2 is O, S, CR 3 R 4 , NR 5 or SiR 6 R 7 ;

R 1 to R 7 are each independently hydrogen, deuterium, C 1-30 alkyl, C 6-30 aryl or C 2-20 heteroaryl;

L is a linking moiety which enables the structure of Formula (I) to form a conjugated system;

when n is 1, 2 or 3, m is 2 or 3; when n is 2 or 3, m is 1, 2 or 3;

if n is greater than 1, each Moiety A in Formula (I) is the same as each other or different from each other; and

if m is greater than 1, each Moiety B in Formula (I) is the same as each other or different from each other.

17. The organic optoelectronic device according to claim 16 , wherein at least one layer of the organic layers is a luminescent layer and the luminescent layer comprises the compound of the compound of Formula (I).

18. The organic optoelectronic device according to claim 16 , wherein the organic layer further comprises a hole transport layer, a hole injection layer, an electron blocking layer, a hole blocking layer, an electron transport layer, an electron injection layer, or a combination thereof.

19. The organic optoelectronic device according to claim 17 , wherein the organic layer further comprises a hole transport layer, a hole injection layer, an electron blocking layer, a hole blocking layer, an electron transport layer, an electron injection layer, or a combination thereof.

20. The organic optoelectronic device according to claim 17 , wherein the compound of Formula (I) is present in the luminescent layer as a doped material, a co-doped material or a host material.