IP Library Granted Patent US 10,197,464
Granted Patent B2
US 10,197,464 · App. 15/198,530 · Granted Feb 5, 2019

Semiconductor physical quantity sensor having filter circuits for blocking electromagnetic wave noise

Inventors: Mutsuo Nishikawa (Matsumoto, JP); Katsuya Karasawa (Shiojiri, JP); Kazuhiro Matsunami (Matsumoto, JP)
Assignee: FUJI ELECTRIC CO., LTD.
G01L9/06G01L9/0054
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Quick Facts
Patent No.
US 10,197,464
App. No.
15/198,530
Granted
Feb 5, 2019
Kind
B2
Abstract

A semiconductor physical quantity sensor device having a power source terminal for receiving a power source potential, a ground terminal for receiving a ground potential, and an output terminal. The semiconductor physical quantity sensor includes a sensor configured to generate a signal, an amplifier configured to amplify the signal, and to output the amplified signal through the output terminal, a first resistor electrically connected between the power source terminal and the amplifier, a second resistor electrically connected between the output terminal and the ground terminal, and a filter electrically connected between the power source terminal and the sensor, and including a third resistor and a capacitor.

Claims (62)

1. A semiconductor physical quantity sensor device, comprising:

a sensor configured to sense a physical quantity to thereby generate an electrical signal, the sensor having a low potential side and a high potential side;

a push-pull amplifier circuit configured to amplify the electrical signal generated by the sensor;

a power source terminal for supplying a power source potential thereby;

a ground terminal for supplying a ground potential thereby;

an output terminal configured to output the electrical signal amplified by the amplifier circuit;

a first power source wiring electrically connecting the power source terminal to the sensor;

a second power source wiring electrically connecting the power source terminal to the amplifier circuit;

a ground wiring electrically connecting the ground terminal to the low potential side of the sensor, and to the amplifier circuit;

an electromagnetic-noise filter circuit electrically connected to the first power source wiring;

a first resistor serially electrically connected to the second power source wiring; and

a second resistor electrically connected between the output terminal and the ground terminal.

2. The semiconductor physical quantity sensor device according to claim 1 , further comprising

a first ground wiring electrically connecting the ground terminal to the sensor;

a second ground wiring electrically connecting the ground terminal to the amplifier circuit;

a third resistor serially electrically connected to the second ground wiring; and

a fourth resistor electrically connected between the power source terminal and the output terminal.

3. The semiconductor physical quantity sensor device according to claim 2 , wherein

the first resistor includes a plurality of first resistor elements connected in series,

the third resistor includes a plurality of second resistor elements connected in series, and

the semiconductor physical quantity sensor device further comprises:

a plurality of first switches connected to the plurality of the first resistor elements, each first switch being connected to both ends of and in parallel with a corresponding one of the first resistor elements;

a plurality of second switches connected to the plurality of the second resistor elements, each second switch being connected to both ends of and in parallel with a corresponding one of the second resistor elements; and

a control circuit controlling ON/OFF of the first switches and the second switches.

4. The semiconductor physical quantity sensor device according to claim 2 , further comprising a fifth resistor connected between the power source terminal and the ground terminal.

5. The semiconductor physical quantity sensor device according to claim 2 , further comprising a sensor chip that has a front surface and a back surface, wherein

the sensor is disposed on the back surface of the sensor chip, and

a pressure is applied as the physical quantity to the sensor chip from a side of the back surface.

6. The semiconductor physical quantity sensor device according to claim 1 , wherein the first resistor has a resistance value set such that output characteristics of the electrical signal amplified by the amplifier circuit cancel non-linearity of output characteristics of the electrical signal generated by the sensor.

7. The semiconductor physical quantity sensor device according to claim 6 , wherein the first resistor has the resistance value set such that a first equation expressing the output characteristics of the electrical signal generated by the sensor and a second equation expressing the output characteristics of the electrical signal amplified by the amplifier circuit are linearly symmetric with respect to an axis defined by a linear equation expressing output characteristics without non-linearity of the electrical signal output from the output terminal.

8. The semiconductor physical quantity sensor device according to claim 1 , further comprising a sensor chip that has a front surface and a back surface, wherein

the sensor is disposed on the front surface of the sensor chip, and

a pressure is applied as the physical quantity to the sensor chip, from a side of the front surface.

9. A semiconductor physical quantity sensor device, comprising:

a sensor configured to sense a physical quantity to thereby generate an electrical signal, the sensor having a low potential side and a high potential side;

a push-pull amplifier circuit configured to amplify the electrical signal generated by the sensor;

a power source terminal for supplying a power source potential thereby;

a ground terminal for supplying a ground potential thereby;

an output terminal configured to output the electrical signal amplified by the push-pull amplifier circuit;

a first ground wiring electrically connecting the ground terminal to the sensor;

a second ground wiring electrically connecting the ground terminal to a low potential side of the push-pull amplifier circuit;

a power source wiring electrically connecting the power source terminal to the high potential side of the sensor and to the amplifier circuit;

an electromagnetic-noise filter circuit electrically connected to the power source wiring;

a first resistor serially electrically connected to the second ground wiring; and

a second resistor electrically connected between the power source terminal and the output terminal.

10. The semiconductor physical quantity sensor device according to claim 9 , wherein the first resistor has a resistance value set such that output characteristics of the electrical signal amplified by the push-pull amplifier circuit cancel non-linearity of output characteristics of the electrical signal generated by the sensor.

11. The semiconductor physical quantity sensor device according to claim 10 , wherein the first resistor has the resistance value set such that a first equation expressing the output characteristics of the electrical signal generated by the sensor and a second equation expressing the output characteristics of the electrical signal amplified by the amplifier circuit are linearly symmetric with respect to an axis defined by a linear equation expressing output characteristics without non-linearity of the electrical signal output from the output terminal.

12. The semiconductor physical quantity sensor device according to claim 9 , further comprising a sensor chip that has a front surface and a back surface, wherein

the sensor is disposed on the back surface of the sensor chip, and

a pressure is applied as the physical quantity to the sensor chip from a side of the back surface.

13. A semiconductor physical quantity sensor device having a power source terminal for receiving a power source potential, a ground terminal for receiving a ground potential, and an output terminal, comprising:

a sensor configured to generate a signal;

an amplifier configured to amplify the signal, and to output the amplified signal through the output terminal;

a first resistor electrically connected between the power source terminal and a high potential side of the amplifier;

a second resistor electrically connected between the output terminal and the ground terminal; and

a filter electrically connected between the power source terminal and the sensor, and comprising a third resistor and a capacitor, the third resistor being different from the first resistor.

14. A semiconductor physical quantity sensor device having a power source terminal for receiving a power source potential, a ground terminal for receiving a ground potential, and an output terminal, comprising:

a sensor configured to generate a signal;

an amplifier configured to amplify the signal, and to output the amplified signal through the output terminal;

a first resistor electrically connected between the ground terminal and a low potential side of the amplifier;

a second resistor electrically connected between the output terminal and the power source terminal; and

a filter electrically connected between the power source terminal and the amplifier, and including a third resistor and a capacitor.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 30, 2016
From: NISHIKAWA, MUTSUO; KARASAWA, KATSUYA; MATSUNAMI, KAZUHIRO
To: FUJI ELECTRIC CO., LTD.
Reel/Frame 039056/0479 →
Priority Claims (1)
JP 2015-159265 · Aug 11, 2015 · national
Continuity (1)
Related Publication 20170045407A1 · Feb 16, 2017