IP Library Granted Patent US 9,722,592
Granted Patent B2
US 9,722,592 · App. 15/199,978 · Granted Aug 1, 2017

Semiconductor integrated circuit device and power supply system

Inventors: Daisuke Kondo (Tokyo, JP); Koji Tateno (Tokyo, JP); Yumi Kishita (Tokyo, JP); Tomoaki Uno (Tokyo, JP)
Assignee: Renesas Electronics Corporation
H03K17/063H02M3/158H02M3/1588H02M2001/0032H03K2217/0036Y02B70/1466Y02B70/16
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Quick Facts
Patent No.
US 9,722,592
App. No.
15/199,978
Granted
Aug 1, 2017
Kind
B2
Abstract

A semiconductor integrated circuit device includes a first voltage terminal, a second voltage terminal, an output terminal, a high-side MOSFET connected between the first voltage terminal and the output terminal, a low-side MOSFET connected between the output terminal and the second voltage terminal and having first and second gate electrodes, a drive circuit that complementally switches on and off the high-side MOSFET and low-side MOSFET, and a second gate electrode control circuit that generates a second gate control signal supplied to the second gate electrode of the low-side MOSFET. The second gate electrode control circuit has a voltage generating circuit that supplies a negative voltage negative in polarity relative to a voltage at the source of the low-side MOSFET, to the second gate electrode of the low-side MOSFET.

Claims (6)

1. A semiconductor integrated circuit device comprising:

a first voltage terminal supplied with a first voltage;

an output terminal;

a first MOSFET having a first input electrode, a drain, a source, and a second input electrode located closer to the drain than the first input electrode, the first MOSFET being connected between the first voltage terminal and the output terminal and electrically connecting the first voltage terminal to the output terminal according to a first input signal supplied to the first input electrode;

a drive circuit connected to first input electrode of the first MOSFET, the drive circuit generating the first input signal so that the first MOSFET is switched on and off; and

a first voltage generating circuit connected to the second input electrode of the first MOSFET, the first voltage generating circuit supplying a negative voltage negative in polarity relative to a voltage at the source of the first MOSFET, to the second input electrode.

Assignments (1)
CHANGE OF ADDRESS Recorded Nov 29, 2017
From: RENESAS ELECTRONICS CORPORATION
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 044928/0001 →
Continuity (2)
Continuation 14418934
Related Publication 20170005649A1 · Jan 5, 2017