Nanocrystalline quantum dot heterostructure

1. A semiconductor structure, comprising:

a nanocrystalline core comprising a first semiconductor material, the first semiconductor material having a first bandgap; and

a nanocrystalline shell comprising a second semiconductor material different than the first semiconductor material at least partially surrounding the nanocrystalline core, the second semiconductor material having a second bandgap greater than the first bandgap, wherein the second semiconductor material comprises a magnesium-based semiconductor material, and wherein the second bandgap is a wide bandgap greater than 2 eV.

2. The semiconductor structure of claim 1 further comprising:

an outer nanocrystalline shell comprising a third semiconductor material surrounding the second semiconductor material, the third semiconductor material having a third bandgap greater than the first or the second bandgap.

3. The semiconductor structure of claim 1 , wherein the magnesium-based semiconductor material comprises a magnesium chalcogenide.

4. The semiconductor structure of claim 1 , wherein the first bandgap and the second bandgap are nested, and a minimal mismatch of lattice constants between the core and shell exists.

5. The semiconductor structure of claim 1 , wherein the magnesium-based semiconductor material is selected from a group of alloys consisting of: Cd n Mg 1-n S, Zn x Mg 1-x Se, and Zn m Mg 1-m S.

6. The semiconductor structure of claim 1 , wherein the second semiconductor material exhibits a bandgap, and a bandgap alignment with the first semiconductor material, to realize a Type I heterojunction bandgap alignment with the first semiconductor material.

7. The semiconductor structure of claim 1 , wherein the semiconductor structure is a Type I electronic structure, in which absorption is substantially controlled by the nanocrystalline shell, and an emission peak is substantially controlled by the nanocrystalline core.

8. The semiconductor structure of claim 2 , wherein the third semiconductor material comprises another magnesium-based semiconductor material.

9. The semiconductor structure of claim 8 , wherein the other magnesium-based semiconductor material is selected from a group of alloys consisting of: Cd n Mg 1-n S, Zn x Mg 1-x Se, and Zn m Mg 1-m S .

10. The semiconductor structure of claim 3 , wherein the magnesium chalcogenide is selected from a group of magnesium chalcogenides consisting of: MgO, MgS, and MgSe.

11. The semiconductor structure of claim 5 , wherein the first semiconductor material is selected from a group consisting of: CdSe, and CdSe m S m-1 .

12. The semiconductor structure of claim 7 , wherein the emission peak is further controlled by a size of the nanocrystalline core, and a size of the nanocrystalline shell.

13. The semiconductor structure of claim 12 , wherein the emission peak further controlled by the size of the nanocrystalline shell comprises the emission peak controlled by a diameter and a length of the nanocrystalline shell.

14. A quantum dot, comprising:

a ternary semiconductor nanocrystalline shell made of a first Group II-VI semiconductor material selected from a group consisting of: CdMgS, ZnMgSe, and ZnMgS; and

a semiconductor nanocrystalline core made of a second, different, Group II-VI semiconductor material selected from the group consisting of: CdSe, and CdSe m S 1-m , the ternary semiconductor nanocrystalline shell bonded to and completely surrounding the semiconductor nanocrystalline core.

15. The quantum dot of claim 14 , further comprising an outer shell layer encapsulating the ternary semiconductor nanocrystalline shell.

16. The quantum dot of claim 14 , wherein the semiconductor nanocrystalline core is an anisotropic semiconductor nanocrystalline core.

17. The quantum dot of claim 16 , wherein the anisotropic semiconductor nanocrystalline core has an aspect ratio between, but not including, 1.0 and 2.0.