METALLIZATION STRUCTURES FOR SOLAR CELLS
Solar cells having conductive contacts are described. In an example, a solar cell can include a protective layer disposed over a substrate, where the protective layer comprises a contact hole. A first metal layer disposed over the protective layer, where the first metal layer is electrically connected to the substrate through the contact hole. A second metal layer disposed over the first metal layer and a bond region disposed between the first metal layer and the second metal layer, where the bond region is located above a region of the protective layer without a contact hole.
1 . A solar cell comprising:
a protective layer disposed over a substrate, wherein the protective layer comprises a contact hole;
a first metal layer disposed over the protective layer, wherein the first metal layer is electrically connected to the substrate through the contact hole;
a second metal layer disposed over the first metal layer; and
a bond region disposed between the first metal layer and the second metal layer, wherein the bond region is located above a region of the protective layer without a contact hole.
2 . The solar cell of claim 1 , further comprising a semiconductor region disposed between the protective layer and the substrate.
3 . The solar cell of claim 2 , wherein the semiconductor region is a polysilicon region.
4 . The solar cell of claim 2 , further comprising a dielectric layer formed between the semiconductor region and the substrate.
5 . The solar cell of claim 4 , wherein the dielectric layer is a tunneling silicon oxide.
6 . The solar cell of claim 1 , further comprising:
another bond region disposed between the first metal layer and the second metal layer, wherein the other bond region is located above a region of the protective layer without a contact hole.
7 . The solar cell of claim 6 , wherein a pitch distance between the bond region and the other bond region is approximately less than or equal to 5 millimeters.
8 . The solar cell of claim 1 , further comprising:
another contact hole within the protective layer, wherein the bond region is located between the contact hole and the other contact hole.
9 . The solar cell of claim 8 , wherein a gap distance between the contact hole and the other contact hole is approximately less than or equal to 0.5 millimeters.
10 . The solar cell of claim 1 , wherein the bond region is a metal weld or a thermal bond region.
11 . The solar cell of claim 1 , wherein the protective layer is an insulating layer, dielectric layer, passivation layer or an anti-reflective coating.
12 . The solar cell of claim 1 , wherein the protective layer comprises silicon nitride, silicon dioxide, aluminum oxide, titanium oxide, aluminum nitride, or polyimide.
13 . The solar cell of claim 1 , wherein the first metal layer comprises a thickness of approximately less than or equal to 400 nanometers.
14 . A solar cell comprising:
a semiconductor region disposed in or above a substrate;
a protective layer disposed over a the semiconductor region, wherein the protective layer comprises a contact hole;
a metal seed layer disposed over a the semiconductor region, wherein a contact region electrically connects the metal seed layer to the semiconductor region;
a metal foil disposed over the metal seed layer; and
a metal weld disposed between the metal seed layer and the metal foil, wherein the metal weld is located above a region of the protective layer without a contact hole.
15 .- 18 . (canceled)
19 . The solar cell of claim 14 , wherein the protective layer is an insulating layer, dielectric layer, passivation layer or an anti-reflective coating.
20 . (canceled)
21 . The solar cell of claim 14 , wherein the metal seed layer comprises a thickness of approximately less than or equal to 400 nanometers.
22 . The solar cell of claim 14 , wherein the metal weld is a line weld or a spot weld.
23 . A method of fabricating a solar cell, the method comprising:
forming a protective layer over a substrate;
forming a contact hole in the protective layer;
forming a first metal layer over the protective layer, wherein the first metal layer is electrically connected to the substrate through the contact hole;
placing a metal foil over the first metal layer; and
forming a bond region between the first metal layer and the metal foil, wherein the protective layer inhibits damage to the substrate during the formation of the bond region at a region of the protective layer without a contact hole.
24 . The method of claim 23 , wherein forming the bond region comprises performing a laser welding or a thermo compression process.
25 . The method of claim 23 , further comprising:
forming another bond region between the first metal layer and the metal foil, wherein the protective layer inhibits damage to the substrate during the formation of the other bond region at a region of the protective layer without a contact hole.
26 .- 27 . (canceled)