Pattern forming method

1. A pattern forming method, comprising:

forming a guide pattern on a substrate including a first region and a second region adjacent to the first region by applying a photoresist on the substrate, selectively exposing the photoresist to light, and developing the exposed photoresist;

applying a directed self-assembly material including a first polymer portion and a second polymer portion to the substrate;

irradiating the first region with an energy beam;

after the irradiation with the energy beam, subjecting the substrate to a first heating process and causing the directed self-assembly material in the second region to separate into a first polymer phase containing predominately the first polymer portion and a second polymer phase containing predominately the second polymer portion; and

removing, simultaneously, the first polymer portion and the second polymer portion of the directed self-assembly material from the first region after irradiation.

2. The pattern forming method according to claim 1 , wherein the energy beam is an electron beam, and at least one of the first and second polymer portions comprises chains scissionable by electron beam irradiation.

3. The pattern forming method according to claim 1 , wherein the guide pattern comprises a line and space pattern.

4. The pattern forming method according to claim 1 , wherein the first region contacts adjacent portions of the guide pattern.

5. The pattern forming method according to claim 1 , wherein irradiating the first region with the energy beam reduces a molecular weight of the directed self-assembly material.

6. The pattern forming method according to claim 1 , wherein the energy beam is one selected from an energy type of electron beam, EUV light, VUV light, UV light, ion beam, X-ray, and visible light.

7. The pattern forming method according to claim 1 , further comprising:

removing the first polymer phase from the second region and leaving the second polymer phase in the second region; and

transferring a pattern to the substrate using the guide pattern and the second polymer phase as a mask.

8. The pattern forming method according to claim 1 , wherein the directed self-assembly material in the first region does not phase separate in the first heating process.

9. A pattern forming method, comprising:

forming a guide pattern on a substrate by applying a photoresist on the substrate, selectively exposing the photoresist to light, and developing the exposed photoresist, the guide pattern including a first region and a second region adjacent to the first region;

applying a directed self-assembly material, including a first polymer portion and a second polymer portion, to the substrate as a single layer;

subjecting the substrate to a first heating process and causing the directed self-assembly material to separate into a first polymer phase containing predominately the first polymer portion and a second polymer phase containing predominately the second polymer portion;

irradiating the first region with an energy beam after the first heating process and leaving the second region unexposed by the energy beam;

subjecting the substrate to a second heating process after the irradiation with the energy beam; and

removing the irradiated directed self-assembly material from the first region after the second heating process with a developer.

10. The pattern forming method according to claim 9 , wherein the second heating process is at a lower temperature than the first heating process.

11. The pattern forming method according to claim 9 , wherein a time period of the second heating process is shorter than a time period of the first heating process.

12. The pattern forming method according to claim 9 , wherein the directed self-assembly material comprises one of a polystyrene-polymethylmethacrylate copolymer and a polytrimethylsilylstyrene-polyhydroxystyrene copolymer.

13. The pattern forming method according to claim 9 , wherein the energy beam is one selected from an energy type of electron beam, EUV light, VUV light, UV light, ion beam, X-ray, and visible light.

14. The pattern forming method according to claim 9 , wherein the energy beam is an electron beam, and at least one of the first and second polymer portions comprises chains scissionable by electron beam irradiation.

15. The pattern forming method according to claim 9 , further comprising:

removing the first polymer phase from the second region and leaving the second polymer phase in the second region; and

transferring a pattern to the substrate using the guide pattern and the second polymer phase as a mask.

16. A pattern forming method, comprising:

forming a guide pattern on a substrate in a photolithographic process, the guide pattern formed in the photolithographic process including a first region and a second region;

spin coating a directed self-assembly material onto the substrate to fill openings in the guide pattern with the directed self-assembly material, the openings corresponding to the first and second regions of the guide pattern;

irradiating the directed self-assembly material in the first region with an energy beam and causing the irradiated directed self-assembly material to become soluble in a developer;

heating the substrate in a first heating process to cause the directed self-assembly material to separate into a first phase portion and a second phase portion, the first and second phase portions forming at least a partially regular pattern in at least one of the first and second regions of the guide pattern;

dissolving all of the irradiated directed self-assembly material in the developer;

removing the first phase portion of the directed self-assembly material from the second region and leaving the second phase portion of the directed self-assembly material in the second region; and

transferring a pattern to the substrate using the guide pattern and the second phase portion as a mask.

17. The pattern forming method according to claim 16 , wherein the first heating process occurs before irradiation of the directed self-assembly material in the first region with the energy beam.

18. The pattern forming method according to claim 17 , further comprising:

heating the substrate in a second heating process that is after the irradiation and before the removing of the first phase portion.

19. The pattern forming method according to claim 16 , wherein the first heating process occurs after irradiation of the directed self-assembly material in the first region with the energy beam.

20. The pattern forming method according to claim 16 , wherein the directed-self-assembly material in the first region of the guide pattern does not separate into the first phase portion and the second phase portion in the first heating process.