SOLID STATE IMAGING ELEMENT, PRODUCTION METHOD THEREOF AND ELECTRONIC DEVICE

1 . An imaging element, comprising:

an insulation film laminated on a semiconductor substrate;

a lower transparent electrode film formed and separated by the insulation film per pixel;

a hydrophobic treatment layer disposed on an inorganic buffer layer;

an organic photoelectric conversion layer laminated on the hydrophobic treatment layer; and

an upper transparent electrode film laminated on the organic photoelectric conversion layer,

wherein the organic photoelectric conversion layer is formed to have an orientation status such that a C axis is almost in parallel with a surface of the lower transparent electrode film and a surface of the insulation film.

2 . The imaging element according to claim 1 , wherein the hydrophobic treatment layer is formed by performing a surface treatment of surfaces of the inorganic buffer layer with a silylation agent.

3 . The imaging element according to claim 2 , wherein hexamethyl silazane is used as the silylation agent used in the surface treatment for forming the hydrophobic treatment layer.

4 . The imaging element according to claim 2 , wherein one of 1,1,3,3-tetramethyl disilazane [TMDS, [SiH(CH 3 ) 2 ] 2 NH], N-trimethylsilyldimethylamine (TMSDMA, (CH 3 ) 5 NSi), N-dimethylsilyldimethylamine (DMSDMA, (CH 3 ) 4 NHSi), 1-trimethylsilylpyrole (TMS pyrole), N,O-bis(trimethylsilyl)trifuluoroacetamide) (BSTFA) and bis(dimethylamino)dimethylsilane (BDMADMS) is used as the silylation agent used in the surface treatment for forming the hydrophobic treatment layer.

5 . The imaging element according to claim 1 , wherein the inorganic buffer layer is disposed on the surface of the insulation film and the lower transparent electrode film.

6 . A method of producing an imaging element, comprising:

laminating an insulation film on a semiconductor substrate;

forming a lower transparent electrode film separated by the insulation film per pixel;

forming an inorganic buffer layer on a surface of the insulation film and the lower transparent electrode film;

forming a hydrophobic treatment layer on the inorganic buffer layer;

laminating an organic photoelectric conversion layer on the hydrophobic treatment layer; and

laminating an upper transparent electrode film on the organic photoelectric conversion layer wherein the organic photoelectric conversion layer is formed to have an orientation status such that an C axis is almost in parallel with the lower transparent electrode film surface and the insulation film surface.

7 . The method of producing the imaging element according to claim 6 , wherein the hydrophobic treatment layer is formed by performing a surface treatment of surfaces of the inorganic buffer layer with a silylation agent.

8 . The method of producing the imaging element according to claim 7 , wherein hexamethyl silazane is used as the silylation agent used in the surface treatment for forming the hydrophobic treatment layer.

9 . The method of producing the imaging element according to claim 7 , wherein one of 1,1,3,3-tetramethyl disilazane [TMDS, [SiH(CH 3 ) 2 ] 2 NH], N-trimethylsilyldimethylamine (TMSDMA, (CH 3 ) 5 NSi), N-dimethylsilyldimethylamine (DMSDMA, (CH 3 ) 4 NHSi), 1-trimethylsilylpyrole (TMS pyrole), N,O-bis(trimethylsilyl)trifuluoroacetamide) (BSTFA) and bis(dimethylamino)dimethylsilane (BDMADMS) is used as the silylation agent used in the surface treatment for forming the hydrophobic treatment layer.

10 . The method of producing the imaging element according to claim 7 , wherein the inorganic buffer layer is disposed on the surface of the insulation film and the lower transparent electrode film.

11 . An electronic device having an imaging element, comprising:

an insulation film laminated on a semiconductor substrate;

a lower transparent electrode film formed and separated by the insulation film per pixel;

an inorganic buffer layer disposed on a surface of the insulation film and the lower transparent electrode film;

a hydrophobic treatment layer disposed on the inorganic buffer layer;

an organic photoelectric conversion layer laminated on the hydrophobic treatment layer; and

an upper transparent electrode film laminated on the organic photoelectric conversion layer,

wherein the organic photoelectric conversion layer is formed to have an orientation status such that an C axis is almost in parallel with the lower transparent electrode film surface and the insulation film surface.

12 . The electronic device according to claim 11 , wherein the hydrophobic treatment layer is formed by performing a surface treatment of surfaces of the inorganic buffer layer with a silylation agent.

13 . The electronic device according to claim 12 , wherein hexamethyl silazane is used as the silylation agent used in the surface treatment for forming the hydrophobic treatment layer.

14 . The electronic device according to claim 12 , wherein one of 1,1,3,3-tetramethyl disilazane [TMDS, [SiH(CH 3 ) 2 ] 2 NH], N-trimethylsilyldimethylamine (TMSDMA, (CH 3 ) 5 NSi), N-dimethylsilyldimethylamine (DMSDMA, (CH 3 ) 4 NHSi), 1-trimethylsilylpyrole (TMS pyrole), N,O-bis(trimethylsilyl)trifuluoroacetamide) (BSTFA) and bis(dimethylamino)dimethylsilane (BDMADMS) is used as the silylation agent used in the surface treatment for forming the hydrophobic treatment layer.

15 . The electronic device according to claim 11 , wherein the inorganic buffer layer disposed on the surface of the insulation film and the lower transparent electrode film.