Bidirectional semiconductor switch with passive turnoff
A symmetrically-bidirectional bipolar transistor circuit where the two base contact regions are clamped, through a low-voltage diode and a resistive element, to avoid bringing either emitter junction to forward bias. This avoids bipolar gain in the off state, and thereby avoids reduction of the withstand voltage due to bipolar gain.
1. A switching circuit comprising:
a two-base bidirectional npn semiconductor device which includes both n-type emitter/collector regions and also p-type base contact regions on each of both opposed surfaces of a p-type monolithic semiconductor die;
control circuitry which is connected separately on the opposed surfaces to the first and second base contact regions; and
first and second distinct clamp circuits, each comprising a series combination of a low-voltage diode and a resistive element, connected so that the anode of the respective low-voltage diode is operatively connected to the respective p-type base contact region, and the cathode of the respective low-voltage diode is operatively connected to the respective n-type emitter/collector region;
wherein the low-voltage diode turns on at a forward voltage which is less than the diode drop of the respective p-n junction between each emitter/collector region and the semiconductor die;
whereby the respective p-n junction between each emitter/collector region and the semiconductor die is clamped to avoid forward bias.
2. The switching circuit of claim 1 , wherein the die is silicon.
3. The switching circuit of claim 1 , wherein the low-voltage diode is a Schottky barrier diode.
4. The switching circuit of claim 1 , wherein the die is silicon, and the low-voltage diode is a Schottky barrier diode.
5. The switching circuit of claim 1 , wherein the emitter/collector region on the first said surface is not electrically connected to the emitter/collector region on the second said surface, except through the semiconductor die itself.
6. The switching circuit of claim 1 , wherein the base contact region on the first said surface is not electrically connected to the base contact region on the second said surface, except through the semiconductor die itself.
7. A switching circuit comprising:
a double-base bipolar transistor, having distinct n-type emitter/collector regions on both first and second opposite surfaces of a p-type semiconductor die, each emitter/collector region defining a p-n emitter junction with respect to the die;
first and second clamp circuits operatively connected to on said first and second opposite surfaces, each circuit including a diode and a resistive element in series, with the anode of the diode operatively connected to the p side of the respective p-n emitter junction, and the cathode operatively connected to the n side of the respective p-n emitter junction;
wherein the diodes have forward diode voltage drops which are less than the forward diode voltage drop characteristic of the respective p-n emitter junction.
8. The switching circuit of claim 7 , wherein the die is silicon.
9. The switching circuit of claim 7 , wherein the diode is a Schottky barrier diode.
10. The switching circuit of claim 7 , wherein the die is silicon, and the diode is a Schottky barrier diode.
11. The switching circuit of claim 7 , wherein the emitter/collector region on the first surface is not electrically connected to the emitter/collector region on the second surface, except through the semiconductor die itself.
12. A switching circuit comprising:
a double-base bipolar transistor, having distinct emitter/collector regions on both first and second opposite surfaces of an n-type semiconductor die, each emitter/collector region defining a p-n emitter junction with respect to the die;
first and second clamp circuits operatively connected to said first and second surfaces, each circuit including a diode and a resistor in series, with the anode of the diode operatively connected to the p side of the respective p-n emitter junction, and the cathode operatively connected to the n side of the respective p-n emitter junction;
wherein the diodes have forward diode voltage drops which are less than the forward diode voltage drop characteristic of the respective p-n junction.
13. The switching circuit of claim 12 , wherein the die is silicon.
14. The switching circuit of claim 12 , wherein the diode is a Schottky barrier diode.
15. The switching circuit of claim 12 , wherein the die is silicon, and the diode is a Schottky barrier diode.