IP Library Granted Patent US 10,686,167
Granted Patent B2
US 10,686,167 · App. 15/215,621 · Granted Jun 16, 2020

Power storage device, battery management unit, and electronic device

Inventors: Junya Goto (Kanagawa, JP); Ai Nakagawa (Kanagawa, JP); Yuika Sato (Kanagawa, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
H01M2/0275H01G11/78H01G11/80H01G11/82H01M2/0285H01M10/0525H01M10/425H01M2010/4271Y02E60/13Y02T10/7022
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Quick Facts
Patent No.
US 10,686,167
App. No.
15/215,621
Granted
Jun 16, 2020
Kind
B2
Abstract

A repeatedly bendable power storage device. A highly reliable power storage device. A long-life power storage device. A repeatedly bendable electronic device. A flexible electronic device. The power storage device includes a film, a positive electrode, and a negative electrode. The film includes a plurality of projections. A difference between the maximum height and the minimum height of a surface of the film is greater than or equal to 0.15 mm and less than 0.8 mm. The modulus of rigidity of the film is less than 6.5×10 9 N. The film includes a metal layer. The thickness of the metal layer is greater than or equal to 5 μm and less than or equal to 200 μm. The positive electrode and the negative electrode are surrounded by the film.

Claims (17)

1. A power storage device comprising:

a film;

a positive electrode; and

a negative electrode,

wherein the film includes embossed projections,

wherein each of the embossed projections has a cross shape in a plan view,

wherein a difference between a maximum height and a minimum height of the embossed projections is greater than or equal to 0.15 mm and less than 0.8 mm,

wherein a modulus of rigidity of the film is less than 6 5×10 9 N/m 2 ,

wherein the film comprises a metal layer,

wherein a thickness of the metal layer is greater than or equal to 5 μm and less than or equal to 200 μm, and

wherein the positive electrode and the negative electrode are surrounded by the film.

2. The power storage device according to claim 1 ,

wherein distortion at a point of rupture of the film is greater than 0.6 and less than or equal to 2.

3. The power storage device according to claim 1 ,

wherein the metal layer comprises aluminum.

4. A battery management unit comprising the power storage device according to claim 1 .

5. An electronic device comprising the power storage device according to claim 1 .

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 21, 2016
From: GOTO, JUNYA; NAKAGAWA, AI; SATO, YUIKA
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 039206/0351 →
Priority Claims (1)
JP 2015-152444 · Jul 31, 2015 · national
Continuity (1)
Related Publication 20170033326A1 · Feb 2, 2017
Cited By (1)
US 1,106,940