Chemical mechanical polishing method using slurry composition containing N-oxide compound
View Patent ↗The present disclosure relates to a method of performing a chemical mechanical planarization (CMP) process with a high germanium-to-oxide removal selectivity and a low rate of germanium recess formation. The method is performed by providing a semiconductor substrate having a plurality of germanium compound regions including germanium interspersed between a plurality of oxide regions including an oxide. A slurry is then provided onto the semiconductor substrate. The slurry has an oxidant and an etching inhibitor configured to reduce a removal rate of the germanium relative to the oxide. A CMP process is then performed by bringing a chemical mechanical polishing pad in contact with top surfaces of the plurality of germanium compound regions and the plurality of oxide regions.
1. A method of performing a chemical mechanical planarization (CMP) process, comprising:
providing a semiconductor substrate having a plurality of germanium compound regions comprising germanium interspersed between a plurality of oxide regions comprising an oxide, wherein the plurality of germanium compound regions comprise silicon germanium;
providing a slurry onto the semiconductor substrate, wherein the slurry comprises an oxidant and an etching inhibitor configured to reduce a removal rate of the germanium relative to the oxide; and
performing a CMP process by bringing a chemical mechanical polishing pad in contact with top surfaces of the plurality of germanium compound regions and the plurality of oxide regions.
2. The method of claim 1 , wherein the etching inhibitor is configured to provide the slurry with a germanium-to-oxide etching selectivity of greater than or equal to approximately 60-to-1.
3. The method of claim 1 , wherein the etching inhibitor comprises TEMPO (pyridine N-oxide, 2,2,6,6-Tetramethylpiperidine-1-oxyl) and is configured to reduce the removal rate of the germanium relative to the oxide.
4. The method of claim 1 , wherein the etching inhibitor consists of TEMPO and is configured to reduce the removal rate of the germanium relative to the oxide.
5. The method of claim 1 , further comprising:
selectively etching the semiconductor substrate to form a first plurality of trenches within the semiconductor substrate;
forming the oxide within the first plurality of trenches to form the plurality of oxide regions;
selectively etching the semiconductor substrate to form a second plurality of trenches extending into the semiconductor substrate between the plurality of oxide regions; and
depositing the silicon germanium in the second plurality of trenches to form the plurality of germanium compound regions.
6. The method of claim 1 , further comprising:
performing a selective etch, after bringing the chemical mechanical polishing pad in contact with the top surfaces of the plurality of germanium compound regions and the plurality of oxide regions, to etch back the oxide in a manner that generates one or more three-dimensional fins comprising the germanium compound regions.
7. The method of claim 6 , further comprising:
forming source and drain regions at opposite ends of the one or more three-dimensional fins.
8. The method of claim 7 , further comprising:
forming one or more gate regions above the one or more three-dimensional fins at positions between the source and drain regions.
9. The method of claim 1 , wherein the oxidant comprises hydrogen peroxide, potassium peroxydisulfate, ammonium peroxydisulfate, sodium peroxydisulfate, potassium peroxymonosulfate, peracetic acid, or tert-butyl hydrogen peroxide.
10. The method of claim 1 , wherein the slurry provides for recesses in the germanium compound regions that have a depth in a range of between approximately 2% and approximately 6% of a depth of the germanium removed from the germanium compound regions during the CMP process.
11. The method of claim 1 , wherein the etching inhibitor comprises a nitrogen-oxide compound having a chemical formula of R1R2R3N + —O − , wherein N + comprises a nitrogen molecule, O − comprises an oxygen molecule, R1 is a first substituent, R2 is a second substituent, and R3 is a third substituent.
12. The method of claim 1 , wherein the slurry causes the CMP process to remove germanium from the plurality of germanium compound regions at a higher rate than oxide from the plurality of oxide regions.
13. A method of forming a semiconductor device, comprising:
selectively etching a semiconductor substrate to form a first plurality of trenches within the semiconductor substrate;
forming oxide within the first plurality of trenches;
selectively etching the semiconductor substrate to form a second plurality of trenches extending into the semiconductor substrate between the oxide;
depositing a germanium compound in the second plurality of trenches;
performing a chemical mechanical planarization (CMP) process on the germanium compound and the oxide using a slurry comprising an oxidant and an etching inhibitor configured to reduce a removal rate of the germanium compound relative to the oxide;
etching back the oxide after performing the CMP process to generate one or more three-dimensional fins comprising the germanium compound;
forming source and drain regions at opposite ends of the one or more three-dimensional fins; and
forming one or more gate regions above the one or more three-dimensional fins at positions between the source and drain regions.
14. The method of claim 13 , wherein the etching inhibitor is configured to provide the slurry with a germanium compound-to-oxide etching selectivity of greater than or equal to approximately 60-to-1.
15. The method of claim 13 , wherein the etching inhibitor comprises TEMPO and is configured to reduce the removal rate of the germanium compound relative to the oxide.
16. The method of claim 13 , wherein the slurry provides for recesses in the germanium compound that have a depth in a range of between approximately 2% and approximately 6% of a depth of the germanium compound removed by the CMP process.
17. The method of claim 13 , wherein the etching inhibitor comprises a nitrogen-oxide compound having a chemical formula of R1R2R3N + —O − , wherein N + comprises a nitrogen molecule, O − comprises an oxygen molecule, R1 is a first substituent, R2 is a second substituent, and R3 is a third substituent.
18. A method of forming a semiconductor device, comprising:
selectively etching a semiconductor substrate to form a first plurality of trenches within the semiconductor substrate;
forming oxide within the first plurality of trenches;
selectively etching the semiconductor substrate to form a second plurality of trenches extending into the semiconductor substrate between the oxide;
depositing silicon germanium in the second plurality of trenches;
performing a chemical mechanical polishing (CMP) process, on the silicon germanium and the oxide, using a slurry comprising an oxidant and TEMPO, wherein the TEMPO is configured to provide the slurry with a silicon germanium-to-oxide etching selectivity of greater than or equal to approximately 60-to-1;
performing a selective etch to etch back the oxide in a manner that generates a plurality of three-dimensional fins comprising the silicon germanium protruding outward from the oxide;
forming epitaxial source and drain regions at opposite ends of the plurality of three-dimensional fins; and
forming a gate region above the plurality of three-dimensional fins at positions between the epitaxial source and drain regions.
19. The method of claim 18 , wherein the TEMPO is configured to reduce a removal rate of the silicon germanium relative to the oxide.
20. The method of claim 18 , wherein the slurry provides for recesses in the silicon germanium that have a depth in a range of between approximately 2% and approximately 6% of a depth of the silicon germanium removed by the CMP process.